LMA246
L
OW
N
OISE
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
12/05/00
Fax:
(408) 970-9950
Email:
sales@filss.com
FEATURES
9 GHz to 14 GHz Frequency Band
2.2 dB Noise Figure
25.5 dB Gain
19 dBm Output Power at Saturation
+6 V Single Bias Supply
DESCRIPTION AND APPLICATIONS
The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to
14GHz. Reactively matched 3-stage amplifier provides 28dB nominal gain with 2dB typical noise
figure and 1-dB gain compression power output of +17dBm that can be used as a pre-driver
amplifier for phased array radar as well as commercial communications applications. Ground is
provided to the circuitry through vias to the backside metallization.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
(V
DD
= +6.0V, Z
IN
= Z
OUT
= 50
)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Frequency Band
F
9
14
GHz
Small Signal Gain
S
21
R
S
= 12/12/5
at 50% I
DSS
24
25.5
dB
Saturated Drain Current
I
DSS
R
S
= 0/0/0
120
260
360
mA
Small Signal Gain Flatness
S
21
0.5
1.0
dB
Noise Figure
NF
50% I
DSS
2.2
3.0
dB
Power at 1-dB Compression
P-1dB
R
S
= 12/12/3
at 60% I
DSS
17
dBm
Power at Saturation
P
SAT
19
dBm
Input Return Loss
S
11
-14
dB
Output Return Loss
S
22
-12
dB
Reverse Isolation
S
12
-60
dB
LMA246
L
OW
N
OISE
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
12/05/00
Fax:
(408) 970-9950
Email:
sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain Voltage
V
D
T
Ambient
= 22
3
C
7
V
Operating Current
I
OP
T
Ambient
= 22
3
C
360
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
15
dBm
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
2.5
W
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
150
C
Storage Temperature
T
STG
--
-65
165
C
Maximum Assembly Temperature
(1 min. max.)
T
MAX
--
300
C
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
LMA246
L
OW
N
OISE
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
12/05/00
Fax:
(408) 970-9950
Email:
sales@filss.com
ASSEMBLY DRAWING
Notes:
Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is
recommended. Ultrasonic bonding is not recommended.
The recommended die attach is an eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290C.
Maximum time at temperature is 1 minute. Use of forming gas (90% N
2
, 10% H
2
) for best results.
Bond on bond or stitch bond acceptable.
Conductor over conductor acceptable. Conductors must not short.
LMA246
L
OW
N
OISE
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
12/05/00
Fax:
(408) 970-9950
Email:
sales@filss.com
MECHANICAL OUTLINE
Notes:
All units are in microns (m).
All bond pads are 100 X 100 m
2
.
Bias pad (V
DD
) size is 100 X 121.5 m
2
.
Unless otherwise specified.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
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