LMA417
M
EDIUM
P
OWER
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
03/23/01
Fax:
(408) 970-9950
Email:
sales@filss.com
FEATURES
18 GHz to 24 GHz Frequency Band
19 dB Gain
23 dBm Output Power at Saturation
14 dB Input/Output Return Loss
+4 V Dual Bias Supply
DESCRIPTION AND APPLICATIONS
The Filtronic Solid State LMA417 is a 3-stage medium power PHEMT amplifier that provides 19dB
linear power gain with 1-dB gain compression power output of greater than +21dBm for commercial
mm-W (millimeter-wave) 18 & 23GHz PCN/PCS and 20GHz SatCom application. Ground is
provided to the circuitry through vias to the backside metallization.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
(V
DD
= +4.0V, Z
IN
= Z
OUT
= 50
)
Parameter
Symbol
Test Conditions
Operating Frequency
Min
Typ
Max
Units
Small Signal Gain
S
21
60% I
DSS
18
0.5 GHz
18
19
dB
20
0.5 GHz
17
18
dB
23
0.5 GHz
17
18
dB
24.5-26.5 GHz
18
dB
Saturated Drain Current
I
DSS
165
360
495
mA
Small Signal Gain Flatness
S
21
18-24 GHz
1
dB
24-26.5 GHz
1.5
dB
Power at 1-dB Compression
P-1dB
60% I
DSS
21
dBm
Power at Saturation
P
SAT
23
dBm
Input Return Loss
S
11
-14
dB
Output Return Loss
S
22
-14
dB
Reverse Isolation
S
12
-48
dB
LMA417
M
EDIUM
P
OWER
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
03/23/01
Fax:
(408) 970-9950
Email:
sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain Voltage
V
D
T
Ambient
= 22
3
C
7
V
Gate Voltage
V
G
T
Ambient
= 22
3
C
-1
V
Operating Current
I
OP
T
Ambient
= 22
3
C
495
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
15
dBm
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
3.5
W
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
150
C
Storage Temperature
T
STG
--
-65
165
C
Maximum Assembly Temperature
(1 min. max.)
T
MAX
--
300
C
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
LMA417
M
EDIUM
P
OWER
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
03/23/01
Fax:
(408) 970-9950
Email:
sales@filss.com
ASSEMBLY DRAWING
Notes:
Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is
recommended. Ultrasonic bonding is not recommended.
The recommended die attach
is a eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290C
.
Bond on bond or stitch bond acceptable.
Conductor over conductor acceptable. Conductors must not short.
LMA417
M
EDIUM
P
OWER
PHEMT
MMIC
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
03/23/01
Fax:
(408) 970-9950
Email:
sales@filss.com
MECHANICAL OUTLINE
Notes:
All units are in microns (m).
All bond pads are 100 X 100 m
2
.
Bias pad (V
DD
) size is 100 X 121.5 m
2
.
Unless otherwise specified.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
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