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Электронный компонент: LMA442

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LMA442
M
EDIUM
P
OWER
PHEMT
MMIC
Phone: (408) 988-1845
http:// www.filss.com
Revised: 06/21/01
Fax: (408) 970-9950
Email: sales@filss.com
FEATURES
26.5 GHz to 29.5 GHz Frequency Band
+22 dBm Output Power at 1dB Compression
19 dB Gain
+5 V Dual Bias Supply
DESCRIPTION AND APPLICATIONS
The LMA442 is a medium power pHEMT amplifier that operates from 26.5 to 29.5 GHz. This 3-
stage amplifier provides 19 dB linear power gain with 1-dB gain compression power output of
greater than +22 dBm. The LMA442 is designed for LMDS/LMCS applications. Ground is provided
to the circuitry through vias to the backside metallization.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
(V
DD
= +5.0V, Z
IN
= Z
OUT
= 50
)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Frequency Band
F
26.5
29.5
GHz
Power at 1-dB Compression
P-1dB
75% I
DSS
21
22
dBm
Power at Saturation
P
SAT
75% I
DSS
23
24
dBm
Small Signal Gain
S
21
75% I
DSS
18
19
dB
Small Signal Gain Flatness
S
21
1
2
dB
Input Return Loss
S
11
-8.5
-10
dB
Output Return Loss
S
22
-7.5
-10
dB
Reverse Isolation
S
12
-30
-40
dB
Saturated Drain Current
I
DSS
250
350
450
mA
LMA442
M
EDIUM
P
OWER
PHEMT
MMIC
Phone: (408) 988-1845
http:// www.filss.com
Revised: 06/21/01
Fax: (408) 970-9950
Email: sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain Voltage
V
D
T
Ambient
= 22
3
C
6
V
Operating Current
I
OP
T
Ambient
= 22
3
C
495
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
12
dBm
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
4
W
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
150
C
Storage Temperature
T
STG
--
-65
165
C
Maximum Assembly Temperature
(1 min. max.)
T
MAX
--
300
C
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
LMA442
M
EDIUM
P
OWER
PHEMT
MMIC
Phone: (408) 988-1845
http:// www.filss.com
Revised: 06/21/01
Fax: (408) 970-9950
Email: sales@filss.com
ASSEMBLY DRAWING
Notes:
Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is
recommended. Ultrasonic bonding is not recommended.
The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
Bond on bond or stitch bond acceptable.
Conductor over conductor acceptable. Conductors must not short.
LMA442
M
EDIUM
P
OWER
PHEMT
MMIC
Phone: (408) 988-1845
http:// www.filss.com
Revised: 06/21/01
Fax: (408) 970-9950
Email: sales@filss.com
MECHANICAL OUTLINE
Notes:
All units are in microns (m).
All bond pads are 100 X 100 m
2
.
Bias pad (V
DD
) size is 100 X 121.5 m
2
.
Unless otherwise specified.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.