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Электронный компонент: LP1500SOT223

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Filtronic
LP1500SOT223
Solid State
Low Noise, High Linearity Packaged PHEMT
Phone: (408) 988-1845 Internet:
http://www.filtronicsolidstate.com
Fax: (408) 970-9950
FEATURES
+27 dBm Typical Power at 1800 MHz
15 dB Typical Power Gain at 1800 MHz
1.0 dB Typical Noise Figure
+42 dBm Typical Intercept Point
Color-coded by I
DSS
range
(TOP VIEW)
DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
m by 1500
m
Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si
3
N
4
passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (T
A
= 25
C)
SYMBOLS
PARAMETERS
MIN
TYP
MAX
UNITS
I
DSS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
LP1500-SOT223-1 BLUE
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
375
451
527
420
490
560
450
526
600
mA
P
1dB
Output Power at 1dB Gain Compression
V
DS
= 3.3V, I
DS
= 33% I
DSS
f
= 1800 Mhz
25.0
27.0
dBm
G
1dB
Power Gain at 1dB Gain Compression
V
DS
= 3.3V, I
DS
= 33% I
DSS
f
= 1800 MHz
13.5
15.0
dB
NF
Noise Figure V
DS
= 3.3V, I
DS
= 33% I
DSS
,
f
= 1.8 GHz
1.0
dB
IP3
Output Intercept Point V
DS
= 3.3V, I
DS
= 33% I
DSS
,
f
= 1.8 GHz
42
dBm
I
MAX
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
925
mA
G
M
Transconductance
V
DS
= 2V V
GS
= 0V
300
400
mS
V
P
Pinch-Off Voltage
V
DS
= 2V I
DS
= 5mA
-0.25
-1.2
-2.0
V
I
GSO
Gate-Source Leakage Current
V
GS
= -3V
10
75
A
BV
GS
Gate-Source Breakdown Voltage
I
GS
= 8mA
-8
-10
V
BV
GD
Gate-Drain Breakdown Voltage
I
GD
= 8mA
-8
-11
V
DSS-026 WF
SOURCE
GATE
DRAIN
SOURCE
Filtronic LP1500SOT223
Solid State
Low Noise, High Linearity Packaged PHEMT
Phone: (408) 988-1845 Internet:
http://www.filtronicsolidstate.com
Fax: (408) 970-9950
ABSOLUTE MAXIMUM RATINGS
(25
C)
RECOMMENDED CONTINUOUS
OPERATING LIMITS
SYMBOL PARAMETER
RATING
1
SYMBOL PARAMETER
RATING
2
V
DS
Drain-Source Voltage 4V V
DS
Drain-Source Voltage 3.5V
V
GS
Gate-Source Voltage -3V V
GS
Gate-Source Voltage -1V
I
DS
Drain-Source Current I
DSS
I
DS
Drain-Source Current 0.5 x I
DSS
I
G
Gate Current 50 mA I
G
Gate Current 15 mA
P
IN
RF Input Power 350 mW P
IN
RF Input Power 250 mW
T
CH
Channel Temperature 175
C T
CH
Channel Temperature 150
C
T
STG
Storage Temperature -65/175
C T
STG
Storage Temperature -20/50
C
P
T
Power Dissipation
1.7W
3,4
P
T
Power Dissipation
1.4 W
3,4
G
XdB
Gain Compression 8 dB
NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: P
T
(P
DC
+ P
IN
) - P
OUT
, where: P
DC
= DC bias power, P
OUT
= RF output power, and
P
IN
= RF input power.
Provide for adequate heatsinking at the large source lead.
4. Power Dissipation to be de-rated as follows above 25
C:
Absolute Maximum: P
T
= 1.7W - (10mW/
C) x T
HS
Recommended Continuous Operating:
P
T
= 1.4W - (10mW/
C) x T
HS
where T
HS
= heatsink or ambient temperature.
5. Specifications subject to change without notice.
HANDLING PRECAUTIONS:
Care should be exercised during handling to avoid damage to the devices. Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be
treated as Class 1A (0-500V), and further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
APPLICATIONS NOTES AND DESIGN DATA:
Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5" diskette, or may be down-loaded
from our Web Page.
PACKAGE OUTLINE:
0 .1 4 6
0 .2 8 6
0 .1 2 0
0 .2 6 4
(D IM E N S IO N S IN IN C H E S )
0 .0 1 2
0 .0 5 1
0 .0 3 0
0 .0 7 1
0 .0 9 0
DSS-026 WF