LP750P100
P
ACKAGED
0.5
W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Fax:
(408) 970-9950
Email:
sales@filss.com
FEATURES
41 dBm IP3 at 12 GHz
27.5 dBm P-1dB at 12 GHz
10.5 dB Power Gain at 12 GHz
2.5 dB Noise Figure at 12 GHz
60% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS
The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
m Schottky barrier gate. The recessed "mushroom" gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power/low-noise applications. The LP750 also features Si
3
N
4
passivation and is available in die form or in surface-mount packages.
The LP750P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22 3 C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output Power @
1 dB Compression
P
1dB
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
26.0
27.5
dBm
Power Gain @
1 dB Compression
G
1dB
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
9.0
10.5
dB
Maximum Available Gain
MAG
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
14.0
dB
Noise Figure
NF
f = 12GHz; V
DS
= 5V; I
DS
= 33% I
DSS
2.5
dB
Power-Added Efficiency
f = 12GHz; V
DS
= 5V; I
DS
= 50% I
DSS
;
P
OUT
= 25dBm
60
%
Output Intercept Point
IP
3
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
;
P
OUT
= 10dBm
41
dBm
Saturated Drain-Source Current
I
DSS
V
DS
= 2V; V
GS
= 0V
180
265
mA
Transconductance
G
M
V
DS
= 2V; V
GS
= 0V
230
280
mS
Pinch-Off Voltage
V
P
V
DS
= 2V; I
DS
= 4mA
-2.0
-1.2
-0.25
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 4mA
12
15
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 4mA
12
16
V
Gate-Source Leakage
Current Magnitude
|I
GSL
|
V
GS
= -5V
5
45
A
LP750P100
P
ACKAGED
0.5
W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Fax:
(408) 970-9950
Email:
sales@filss.com
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Symbol
Nominal
Units
Drain-Source Voltage
V
DS
8
V
Gate-Source Voltage
V
GS
-1.2
V
Drain-Source Current
I
DS
0.8 I
DSS
mA
RF Input Power
P
IN
150
mW
Channel Operating Temperature
T
CH
150
C
Ambient Temperature
T
STG
-20/50
C
Notes:
Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
12
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-4
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
200% I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3
C
35
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
250
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Notes:
Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
to the device.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly and,
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
LP750P100
P
ACKAGED
0.5
W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Fax:
(408) 970-9950
Email:
sales@filss.com
PACKAGE OUTLINE
dimensions in mils, tolerance =
2 mils
All information and specifications are subject to change without notice.
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