LPD200P70
P
ACKAGED
H
IGH
D
YNAMIC
R
ANGE
PHEMT
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
1/20/01
Fax:
(408) 970-9950
Email:
sales@filss.com
FEATURES
20 dBm Output Power at 1-dB Compression at 18 GHz
9.5 dB Power Gain at 18 GHz
16 dB Small Signal Gain at 2 GHz
0.8 dB Noise Figure at 2 GHz
DESCRIPTION AND APPLICATIONS
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
m by 200
m Schottky barrier gate. The recessed "mushroom"
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPD200's active areas are
passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems and other types of commercial wireless systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C*
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current**
I
DSS
V
DS
= 2 V; V
GS
= 0 V
40
85
mA
Power at 1-dB Compression
P-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
19
20
dBm
Power Gain at 1-dB Compression
G-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
8
9.5
dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 11 dBm
50
%
Noise Figure
NF
V
DS
= 3.3 V; I
DS
= 25% I
DSS
;
f=2 GHz
0.7
dB
Maximum Drain-Source Current
I
MAX
V
DS
= 2 V; V
GS
= 1 V
125
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
60
80
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
1
15
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 1 mA
-0.25
-0.8
-1.5
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 1 mA
-6
-7
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 1 mA
-8
-9
V
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P702 = 66-85 mA
LPD200P70
P
ACKAGED
H
IGH
D
YNAMIC
R
ANGE
PHEMT
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
1/20/01
Fax:
(408) 970-9950
Email:
sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
7
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-3
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3
C
5
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
60
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
400
mW
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25
C:
P
TOT
= 400mW (3.1mW/
C) x T
HS
where T
HS
= heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
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