PRELIMINARY DATA SHEET
LPD200SOT343
P
ACKAGED
H
IGH
D
YNAMIC
R
ANGE
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 2/09/01
Fax: (408) 970-9950
Email: sales@filss.com
FEATURES
0.6 dB Noise Figure at 2 GHz
15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
50% Power-Added-Efficiency at 2 GHz
DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
m by 200
m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200's active areas are passivated with Si
3
N
4
, and
the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
I
DSS
V
DS
= 2 V; V
GS
= 0 V
45
75
mA
Power at 1-dB Compression
P-1dB
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
14
15.5
dBm
Power Gain at 1-dB
Compression
G-1dB
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
20
21
dB
Power-Added Efficiency
PAE
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
;
P
OUT
= 19.5 dBm
50
%
Noise Figure
NF
f=2GHz; V
DS
= 3V; I
DS
= 25% I
DSS
0.6
dB
f=2GHz; V
DS
= 5V; I
DS
= 50% I
DSS
0.8
dB
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
50
70
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
1
10
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 1 mA
-0.25
-1.5
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 1 mA
6
7
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 1 mA
8
9
V
PRELIMINARY DATA SHEET
LPD200SOT343
P
ACKAGED
H
IGH
D
YNAMIC
R
ANGE
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 2/09/01
Fax: (408) 970-9950
Email: sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
7
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-3
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3
C
5
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
60
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
PACKAGE OUTLINE
(dimensions in mm)
All information and specifications are subject to change without notice.
SOURCE
GATE
DRAIN
SOURCE
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