2SK3760
2004-02-26
1
10.5 max
3.840.2
6.6 max.
2.7
15.6 max.
13.4 min.
1.5 max
0.81 max
2.54
3.9
max.
4.7 max
1.3
0.45
2.7
1 2 3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
)
2SK3760
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 1.7 (typ.)
High forward transfer admittance: |Y
fs
| = 2.5S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 600 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
600
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
3.5
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
14
A
Drain power dissipation (Tc
=
25C)
P
D
60
W
Single pulse avalanche energy
(Note 2)
E
AS
6.3
mJ
Avalanche current
I
AR
3.5
A
Repetitive avalanche energy (Note 3)
E
AR
6
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.08
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: V
DD
=
90 V, T
ch
=
25C(initial), L
=
0.9 mH, I
AR
=
3.5 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unit
1
3
2
Weight : 2.0g(typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
1. Gate
2. Drain(HEAT SINK)
3. Source
1.5 max
2.54
3.9 max
13.4 min
15.6 max
3.840.2
10.5 max
6.6 max
4.7 max
1.3
0.45
2.7
0.81
2SK3760
2004-02-26
2
Electrical Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
25 V, V
DS
=
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
D
=
10
A, V
GS
=
0 V
30
V
Drain cut-off current
I
DSS
V
DS
=
600 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
600
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
1.8 A
1.7
2.2
Forward transfer admittance
Y
f s
V
DS
=
10 V, I
D
=
1.8 A
0.7
2.5
S
Input capacitance
C
iss
550
Reverse transfer capacitance
C
rss
6
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
60
pF
Rise time
t
r
12
Turn-on time
t
on
45
Fall time
t
f
13
Switching time
Turn-off time
t
off
80
ns
Total gate charge
Q
g
16
Gate-source charge
Q
gs
10
Gate-drain charge
Q
gd
V
DD
-
400 V, V
GS
=
10 V, I
D
=
3.5 A
6
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
3.5
A
Pulse drain reverse current
(Note 1)
I
DRP
14
A
Forward voltage (diode)
V
DSF
I
DR
=
3.5 A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
1400
ns
Reverse recovery charge
Q
rr
I
DR
=
3.5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
s
9
C
Marking
R
L
=
111
0 V
10
V
V
GS
V
DD
-
200 V
I
D
=
1.8
A V
OUT
50
Duty
<
=
1%, t
w
=
10
s
TYPE
K3760
Lot Number
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2SK3760
2004-02-26
3
1
0.1
1
10
10
VGS
=
10 V
15V
0
0
2
4
6
8
10
2
4
Tc
=
-
55C
25
100
3
1
0
12
16
20
0
ID
=
3.5 A
4
8
12
16
1
1.8
8
4
0.1
1
10
0.1
1
10
25
100
Tc
=
-
55C
2
1.2
0.8
0
1.6
0.4
0
1
2
3
4
VGS
=
4V
4.2
4.6
4.4
4.8
5
8
15,10
5
5.5
6
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN CURRENT I
D
(A)
4
3
2
1
0
5
0
8
20
VGS
=
4 V
4.5
5
6
15,10
5.5
16
12
4
8
COMMON SOURCE
Tc
=
25C
PULSE TEST
DRAIN CURRENT I
D
(A)
R
DS (ON)
I
D
DRAIN
-
SOURCE ON RESISTANCE
R
DS (ON)
(
)
COMMON SOURCE
Tc
=
25C
PULSE TEST
DRAIN CURRENT I
D
(A)
Y
f s
I
D
COMMON SOURCE
VDS
=
20 V
PULSE TEST
FORWARD TRANSFER ADMITTANCE
Y
fs
(S)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN CURRENT I
D
(A)
COMMON SOURCE
Tc
=
25C
PULSE TEST
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
V
GS
DRAIN CURRENT I
D
(A)
COMMON SOURCE
VDS
=
10 V
PULSE TEST
DRAIN
-
SOURCE VO
LTAGE V
DS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
V
GS
COMMON SOURCE
Tc
=
25
PULSE TEST
2SK3760
2004-02-26
4
GATE
-
SOURCE VOLTAGE V
GS
(V)
1
0.1
10
100
1000
10000
1
10
100
Ciss
Coss
Crss
160
-
40
0
40
80
120
-
80
10
8
6
4
2
0
ID
=
3.5A
1
1.8
0
1
2
3
5
-
80
-
40
0
40
80
120
160
4
0
0.1
-
0.2
1
10
100
-
0.6
-
0.8
-
1.2
VGS
=
0,
-
1 V
10
5
1
3
-
0.4
-1.0
0
5
15
VDD
=
100 V
VDS
VGS
400
200
20
25
500
200
100
300
400
0
10
20
8
4
12
16
0
80
0
0
40
80
120
40
60
160
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE V
DS
CAPACITANCE C (pF)
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25C
DRAIN POWER DISSIPATION
P
D
(W)
CASE TEMPERATURE Tc (C)
P
D
Tc
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
DR
V
DS
DRAIN REVERSE CURRENT
I
DR
(A)
COMMON SOURCE
Tc
=
25C
PULSE TEST
GATE THRESHOLD VOLTAGE
V
th
(V)
CASE TEMPERATURE Tc (C)
V
th
Tc
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
CASE TEMPERATURE Tc (C)
R
DS (ON)
Tc
DRAIN
-
SOURCE ON RESISTANCE
R
DS (ON)
(
)
TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
ID
=
3.5 A
Tc
=
25C
PULSE TEST
COMMON SOURCE
VGS
=
10 V
PULSE TEST
2SK3760
2004-02-26
5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
AVALANCHE ENERGY
E
AS
(mJ)
r
th
t
w
PULSE WIDTH t
w
(s)
0.1
10
1
10
100
1
10
100
1
10
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
2.08C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.01
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch
-
c)
SINGLE PULSE
-
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
0.9 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
8
6
4
2
0
25
50
75
100
125
150
0.01
1
0.1
1
10
100
10
1000
100
100
s
*
1 ms
*
VDSS max
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
.
ID max (PULSED)
*
ID max (CONTINUOUS)
*
DRAIN CURRENT I
D
(A)
DC OPERATION
Tc
=
25C
2SK3760
2004-02-26
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assum ed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments , all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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