Chip Silicon Rectifier
FFM101-M THRU FFM107-M
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(nS)
(
o
C)
FFM101-M
F1
50
35
50
FFM102-M
F2
100
70
100
FFM103-M
F3
200
140
200
FFM104-M
F4
400
280
400
FFM105-M
F5
600
420
600
250
FFM106-M
F6
800
560
800
FFM107-M
F7
1000
700
1000
-55 to +150
Operating
temperature
V
R R M
* 1
V
R M S
* 2
V
R
* 3
V
F
* 4
T
R R
* 5
500
150
SYMBOLS
MARKING
CODE
1.3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 55
o
C
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
100
uA
Thermal resistance
Junction to ambient
R
q
JA
42
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
15
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-123
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FFM101-M THRU FFM107-M)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
35
30
25
20
15
10
5
0
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
.01 .05 .1 .5 1 5 10 50 100
D.U.T.
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
AMBIENT TEMPERATURE ( C)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
E
A
K
F
O
R
W
A
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0 20 40
60 80 100 120 140 160 180 200
0
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