Chip Silicon Rectifier
FFM201-L THRU FFM207-L
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gr am
(V)
(V)
(V)
(V)
(nS)
(
o
C)
FFM201
F21
50
35
50
FFM202
F22
100
70
100
FFM203
F23
200
140
200
FFM204
F24
400
280
400
FFM205
F25
600
420
600
250
FFM206
F26
800
560
800
FFM207
F27
1000
700
1000
-55 to +150
Operating
temperature
V
R R M
* 1
V
R M S
* 2
V
R
* 3
V
F
* 4
T
R R
* 5
500
150
SYMBOLS
MARKING
CODE
1.3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 55
o
C
I
O
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
50
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
100
uA
Thermal resistance
Junction to ambient
Rq
JA
35
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
40
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L
0.2
2.0
.02
20
RATING AND CHARACTERISTIC CURVES (FFM201-L THRU FFM207-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.4
0.8
1.2
1.6
2.0
2.4
70
60
50
40
30
20
10
0
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
.01 .05 .1 .5 1 5 10 50 100
D.U.T.
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
6.0
AMBIENT TEMPERATURE ( C)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
E
A
K
F
O
R
W
A
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0 20 40
60 80 100 120 140 160 180 200
0
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