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Электронный компонент: FFM307

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Chip Silicon Rectifier
FFM301 THRU FFM307
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
(V)
(V)
(V)
(V)
(nS)
(
o
C)
FFM301
F31
50
35
50
FFM302
F32
100
70
100
FFM303
F33
200
140
200
FFM304
F34
400
280
400
FFM305
F35
600
420
600
250
FFM306
F36
800
560
800
FFM307
F37
1000
700
1000
SYMBOLS
MARKING
CODE
1.3
-55 to +150
Operating
temperature
V
R R M
* 1
V
R M S
* 2
V
R
* 3
V
F
* 4
T
R R
* 5
500
150
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 55
o
C
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
100
A
V
R
= V
RRM
T
A
= 25
o
C
10.0
uA
V
R
= V
RRM
T
A
= 100
o
C
300
uA
Thermal resistance
Junction to ambient
R
q
JA
50
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
60
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.1
1.0
.01
50
RATING AND CHARACTERISTIC CURVES (FFM301 THRU FFM307)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,
(
A
)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N

C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
I
N
S
T
A
N
T
A
N
E
O
U
S

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.6
1.2
1.8
2.4
3.0
3.6
70
60
50
40
30
20
10
0
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR

50 / 10ns / cm
trr
.01 .05 .1 .5 1 5 10 50 100
D.U.T.
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
AMBIENT TEMPERATURE ( C)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
E
A
K

F
O
R
W
A
A
R
D

S
U
R
G
E

C
U
R
R
E
N
T
,
(
A
)
20
0
40
60
80
100
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0 20 40
60 80 100 120 140 160 180 200
0
10