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Электронный компонент: MM914

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FORMOSA MICROSEMI
MM914
FORMOSA MS
1
High-speed switching diode
Features
1. Small surface mounting type
2. High reliability
3. High speed (t
rr
=
4 ns)
Applications
Extreme fast switches
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25
?
Parameter
Test Conditions
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
75
V
DC blocking voltage
V
R
75
V
t=1s
I
FSM
1
A
Non repetitive peak forward surge
current
t=1
s
I
FSM
4
mA
Forward current
I
F
300
mA
Average rectified current
Half wave rectification with
resistive load and f>50 MHz
I
FAV
200
mA
Power dissipation
P
V
500
mW
Junction temperature
T
j
175
?
Storage temperature range
T
stg
-65~+175
?
Maximum Thermal Resistance
T
j
=25
?
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mm
50mm
1.6mm
R
thJA
500
K/W
FORMOSA MICROSEMI
MM914
FORMOSA MS
2
Electrical Characteristics
T
j
=25
?
Parameter
Test Conditions
Symbol Min
Typ
Max
Unit
Forward voltage
I
F
=10mA
V
F
1
V
Breakdown voltage
I
R
=100
A
V
R
100
V
V
R
=75V
I
R
5
A
V
R
=20V, T
j
=150
?
I
R
50
A
Peak reverse current
V
R
=20V
I
R
25
nA
Diode capacitance
V
R
=0, f=1MHz
C
D
4
pF
Reverse recovery time
I
F
=10mA, V
R
=6V, i
R
=0.1
I
R
, R
L
=100
O
t
rr
4
ns
Dimensions in mm
Cathode band

Glass Case
Mini Melf / SOD 80
JEDEC DO 213 AA