Chip Silicon Rectifier
MRA4001T3 THRU MRA4007T3
Glass passivated type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
o
C)
MRA4001T3
A1
50
35
50
MRA4002T3
A2
100
70
100
MRA4003T3
A3
200
140
200
MRA4004T3
A4
400
280
400
MRA4005T3
A5
600
420
600
MRA4006T3
A6
800
560
800
MRA4007T3
A7
1000
700
1000
SYMBOLS
MARKING
CODE
1.1
-55 to +150
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
50
uA
Thermal resistance
Junction to ambient
Rq
JA
50
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
15
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L
.1
1.0
10
100
RATING AND CHARACTERISTIC CURVES (
)
MRA4001T3 THRU MRA4007T3
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
R
E
V
E
R
S
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
,
(
m
A
)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
0 20 40 60 80 100 120 140
.01
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
Tj=100 C
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.2
0
0.4
0.6
0.8
1.0
1.2
AMBIENT TEMPERATURE ( C)
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.1
1.0
.01
10
50
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
.6 .7 .8 .9 1.0 1.1 1.2 1.3
3.0
Tj=25 C
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
35
30
25
20
15
10
5
0
.01 .05 .1 .5 1 5 10 50 100
P
E
A
K
F
O
R
W
A
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
0 20 40
60 80 100 120 140 160 180 200
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