Chip Silicon Rectifier
SFM31 THRU SFM36
Super fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
(V)
(V)
(V)
(V)
(nS)
(
o
C)
SFM31
S31
50
35
50
SFM32
S32
100
70
100
SFM33
S33
150
105
150
SFM34
S34
200
140
200
SFM35
S35
300
210
300
SFM36
S36
400
280
400
-55 to +150
Operating
temperature
V
R R M
* 1
V
R M S
* 2
V
R
* 3
V
F
* 4
T
R R
* 5
SYMBOLS
MARKING
CODE
35
0.95
1.25
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 50
o
C
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
100
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
100
uA
Thermal resistance
Junction to ambient
R
q
JA
16
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
45
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
.4
.6
.8
1.0
1.2
1.4
.003
.03
.3
3.0
10
RATING AND CHARACTERISTIC CURVES (SFM31 THRU SFM36)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.2-TYPICAL FORWARD CURRENT
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
0.6
1.2
1.8
2.4
3.0
3.6
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
DERATING CURVE
AMBIENT TEMPERATURE ( C)
1.6 1.8
SF
M
35
~S
FM
36
S
F
M
3
1
~
S
F
M
3
4
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
70
60
50
40
30
20
10
0
.01 .05 .1 .5 1 5 10 50 100
0
25
50 75 100 125 150 175
0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
20
0
40
60
80
100
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
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