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Электронный компонент: MC13820

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Freescale Semiconductor, Inc., 2005. All rights reserved.
Freescale Semiconductor
Technical Data
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
Document Number: MC13820/D
Rev. 1.1, 09/2005
MC13820
Package Information
Plastic Package
Case 1345
(QFN12)
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MC13820
820
QFN-12
1
Introduction
The MC13820 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13820 is fabricated using Motorola's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN12 leadless package.
1.1
Features
RF Input Frequency: 1000 MHz to 2.4 GHz
Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ)
at 2140 MHz
Output 3rd Order Intercept Point (OIP3): 18.5
dBm (typ) at 1575 MHz and 19.7 dBm (typ) at
2140 MHz
Noise Figure (NF): 1.25 dB (typ) at 1575 MHz
and 1.3 dB (typ) at 2140 MHz
1dB Compression Point (P1dB): -10 dBm (typ)
at 1575 MHz and -5 dBm (typ) at 2140 MHz
MC13820
Low Noise Amplifier with Bypass
Switch
Contents:
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Electrical Specifications . . . . . . . . . . . . . . . . 3
3 Application Information . . . . . . . . . . . . . . . . 10
4 Printed Circuit Board . . . . . . . . . . . . . . . . . . 23
5 Scattering Parameters . . . . . . . . . . . . . . . . . 26
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7 Product Documentation . . . . . . . . . . . . . . . . 36
Introduction
MC13820 Technical Data, Rev. 1.1
2
Freescale Semiconductor
Freescale's IP3 Boost Circuitry
Bypass Mode Included for Improved Intercept Point Performance
Total Supply Current:
2.8 mA @ 2.7 Vdc
10 A (typ) in Bypass Mode
Bias Stabilized for Device and Temperature Variations
QFN-12 Leadless Package with Low Parasitics
SiGe Technology Ensures Lowest Possible Noise Figure
Figure 1. Simplified Block Diagram
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
Out
LNA
In
Gain
Enable
VCC1
MC13820
Rbias
Emit
Gnd
Logic
NC
NC
NC
NC
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
3
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
V
CC
3.3
V
Storage Temperature Range
T
stg
-65 to 150
C
Operating Ambient Temperature Range
T
A
-30 to 85
C
RF Input Power
P
rf
10
dBm
Power Dissipation
P
dis
100
mW
Thermal Resistance, Junction to Case
R
JC
24
C/W
Thermal Resistance, Junction to Ambient, 4 layer board
R
JA
90
C/W
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
200 V, Charge Device Model (CDM) 450 V, and
Machine Model (MM)
50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency range
f
RF
1000
2400
MHz
Supply Voltage
V
CC
2.7
2.75
3
V
Logic Voltage
Input High Voltage
Input Low Voltage
1.25
0
-
-
V
CC
0.8
V
Table 3. Electrical Characteristics
(V
CC
= 2.75 V, T
A
= 25C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Gain
R1=1.2 k
, Freq=1.575 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.575 GHz
R1=2 k
, Freq=2.14 GHz
|S21|
2
16
14.5
14.3
13
17.1
15.6
15.3
14.2
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain
1
R1=1.2 k
, Freq=1.575 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.575 GHz
R1=2 k
, Freq=2.14 GHz
MSG, MAG
21.5
19.5
20.5
19.5
22.5
20.5
21.5
19.6
-
-
-
-
dB
Minimum Noise Figure
R1=1.2 k
, Freq=1.575 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.575 GHz
R1=2 k
, Freq=2.14 GHz
NFmin
-
-
-
-
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
dB
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
4
Freescale Semiconductor
Associated Gain at Minimum Noise Figure
R1=1.2 k
, Freq=1.575 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.575 GHz
R1=2 k
, Freq=2.14 GHz
Gnf
21.7
19
21.7
19
22.7
19.8
22.7
19.8
-
-
-
-
dB
1
Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
, if K > 1,
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(V
CC
= 2.75 V, T
A
= 25C, Rbias = 2 k
, unless otherwise noted.)
Characteristic Symbol
Min
Typ
Max
Unit
1575 MHz (Refer to
Figure 9
)
Frequency
f
-
1575
-
MHz
Active Gain
G
17.5
18
-
dB
Active Noise Figure
NF
-
1.25
1.4
dB
Active Input Third Order Intercept Point
IIP3
-1.0
0.5
-
dBm
Active Input 1dB Compression Point
P
1dB
-11
-10
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.3
mA
Bypass Gain
G
-6.0
-5.0
-
dB
Bypass Noise Figure
NF
-
4.8
5.2
dB
Bypass Input Third Order Intercept Point
IIP3
26
27
-
dBm
Bypass Current
-
10
20
A
1960 MHz (Refer to
Figure 10
)
Frequency
f
-
1960
-
MHz
Active Gain
G
16
16.4
-
dB
Active Noise Figure
NF
-
1.25
1.4
dB
Active Input Third Order Intercept Point
IIP3
0
1
-
dBm
Active Input 1dB Compression Point
P
1dB
-7.0
-6
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.3
mA
Bypass Gain
G
-5.0
-4
-
dB
Bypass Noise Figure
NF
-
4.7
5.1
dB
Bypass Input Third Order Intercept Point
IIP3
23
25
-
dBm
Bypass Current
-
10
20
A
Table 3. Electrical Characteristics (continued)
(V
CC
= 2.75 V, T
A
= 25C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
MAG
S
21
S
12
---------- K
K
2
1
=
MSG
S
21
S
12
----------
=
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
5
2140 MHz (Refer to
Figure 11
)
Frequency
f
-
2140
-
MHz
Active Gain
G
15.3
15.7
-
dB
Active Noise Figure
NF
-
1.3
1.4
dB
Active Input Third Order Intercept Point
IIP3
2.5
3.5
-
dBm
Active Input 1dB Compression Point
P
1dB
-6.0
-5
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.2
mA
Bypass Gain
G
-4.2
-3.2
-
dB
Bypass Noise Figure
NF
-
3.2
3.6
dB
Bypass Input Third Order Intercept Point
IIP3
22.5
24.5
-
dBm
Bypass Current
-
10
20
A
2400 MHz (Refer to
Figure 12
)
Frequency
f
-
2400
-
MHz
Active Gain
G
13.8
14
-
dB
Active Noise Figure
NF
-
1.49
1.6
dB
Active Input Third Order Intercept Point
IIP3
3.5
4.0
-
dBm
Active Input 1dB Compression Point
P
1dB
-5.0
-4.0
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.2
mA
Bypass Gain
G
-5.0
-4.0
-
dB
Bypass Noise Figure
NF
-
4.2
4.7
dB
Bypass Input Third Order Intercept Point
IIP3
22
24
-
dBm
Bypass Current
-
10
20
A
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(V
CC
= 2.75 V, T
A
= 25C, Rbias = 2 k
, unless otherwise noted.)
Characteristic Symbol
Min
Typ
Max
Unit
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
6
Freescale Semiconductor
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 2 k
)
Table 5. Truth Table
Pin Function
Pin Name
Enable
Disable
Low Gain
High Gain
Low Gain
High Gain
Circuit Bias VCC1
VCC1
1
1
1
1
Toggles Gain Mode (Active or
Bypass)
GAIN
0
1
0
1
Toggles LNA On/Off
ENABLE
1
1
0
0
LNA Bias VCC3
LNA Out
1
1
1
1
NOTES: 1. Logic state "1" equals V
CC
voltage. Logic state of "0" equals ground potential.
2. VCC3 is inductively coupled to LNA OUT pin
3. Minimum logic state "1" for enable and gain pins is 1.25 V.
4. Maximum logic state "0" for enable and gain pins is 0.8 V.
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Frequency
Rbias is 2 kohm
0
5
10
15
20
25
30
0.5
1.5
2.5
3.5
4.5
5.5
f, Frequency (GHz)
MSG
,
Ma
x
i
mum St
a
b
le
G
a
in;
MAG
,
Maxi
m
u
m
A
vai
l
a
bl
e Gai
n
; |S
21|2,
Forw
a
rd Ins
e
r
t
i
on G
a
in, (
d
B)
MSG
MAG
|S21|
2
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
7
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 1.2 k
)
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
Maximum Stable/Available Gain and
Forw ard Insertion Gain vs. Frequency
Rbias is 1.2 kohm
0
5
10
15
20
25
30
35
0.5
1.5
2.5
3.5
4.5
f, Frequency (GHz)
MSG
,
Ma
x
i
mum St
a
b
le
G
a
in;
MA
G
,
Maxi
m
u
m
Avai
l
a
bl
e Gai
n
; |S
21|2,
Forward Insertion Gain (dB)
M
MSG
MAG
|S21|
2
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Icc
14
15
16
17
18
19
20
21
22
23
24
2.5
3
3.5
4
4.5
5
5.5
Icc (m A)
MSG, Ma
x
i
mum St
a
b
le
Ga
in;
MAG, Ma
x
i
mum
Av
a
ila
ble
G
a
in;
|S2
1
|2
, Forw
a
rd Ins
e
rt
ion G
a
in (
d
B)
MSG/MAG 1.575 GHz
MSG/MAG 1.96 GHz
MSG/MAG 2.14 GHz
S|21|
2
1.575 GHz
S|21|
2
1.96 GHz
S|21|
2
2.14 GHz
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
8
Freescale Semiconductor
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 2 k
)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 1.2 k
)
Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1000
1200
1400
1600
1800
2000
2200
2400
f, Frequency (MHz)
N
F
min, Minimum N
o
ise Figure
(dB
)
0
5
10
15
20
25
30
Gnf,
A
ssoci
ated Gai
n
(dB
)
Gnf
NFmin
Minimum Noise Figure and Associated Gain vs. Frequency
Rbias = 1.2 kohm
0.98
1
1.02
1.04
1.06
1.08
1.1
1.12
1000
1200
1400
1600
1800
2000
2200
2400
f, Frequency (MHz)
NFmin, Minimum Nois
e
Figure (dB
)
0
5
10
15
20
25
30
Gnf,
A
ssoci
ated Gai
n
(dB
)
Gnf
NFmin
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
9
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit
(Rbias varied from 1.2 k
to 3 k)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit
(Rbias varied from 1.2 k
to 3 k)
Input 3rd Order Intercept Point vs. Icc
1960 MHz Application Ckt.
-6
-4
-2
0
2
4
6
1.5
2.5
3.5
4.5
5.5
Icc (mA)
Input 3rd Order Intercept
Point (dBm)
Input 3rd Order Intercept Point vs. Icc
2140 MHz Application Circuit
-2
-1
0
1
2
3
4
5
6
1
2
3
4
5
Icc (mA)
Input 3rd Order Intercept
Point, IIP3 (dBm)
Application Information
MC13820 Technical Data, Rev. 1.1
10
Freescale Semiconductor
3
Application Information
The MC13820 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three
different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain
and Enable pins. The logic truth table is given in
Table 5
.
In these application examples a balance is made between the competing RF performance characteristics of
I
CC
, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the
input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For
a particular application or spec requirement, the matching can be changed to achieve enhanced
performance of one parameter at the expense of other parameters.
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current
drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 k
and 2 k
, see
Table 6
,
Table 7
,
Table 8
, and
Table 9
. These two current drain states offer variation in
intercept point, gain, and noise figure. Measurements are made at a bias of V
CC
= 2.75 V. Freq. spacing
for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss
corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these
corrections in order to better reflect the actual performance of the device.
3.1
1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
CC
is listed in
Table 6
.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
CC
. Values of external resistors R1 and R2 are varied to adjust I
CC
and IP3.
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
11
Figure 9. 1575 MHz LNA Application Schematic
Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
, R2 = 620
Frequency
f
-
1575.42
-
MHz
Power Gain
High Gain
Bypass
G
-
-
18
-4.7
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
20
20.8
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
2.0
25.5
-
-
dBm
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-8.0
-
-
-
dBm
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
680
MC13820
1575 MHz LNA
L1
5.6 nH
C1
22pF
C2
1 pf
L2
5.6 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC
NC
NC
Application Information
MC13820 Technical Data, Rev. 1.1
12
Freescale Semiconductor
Insertion Gain
High Gain
Bypass
G
-
-
18.5
-3.4
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.8
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
4.45
4.0
-
-
mA
A
Rbias R1 Value
-
1.2
-
k
Rstability R2 Value
-
620
-
Input Return Loss
High Gain
Bypass
S11
-
-
-15.5
-8.1
-
-
dB
Gain
High Gain
Bypass
S21
-
-
18.2
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-23.7
-4.4
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-13.9
-6.8
-
-
dB
R1= 2.0 k
, R2 = 680
Frequency
f
-
1575.42
-
MHz
Power Gain
High Gain
Bypass
G
-
-
18
-5.0
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
18.7
21.7
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
0.5
27
-
-
dBm
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
8.2
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-10
-
-
-
dBm
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
13
Insertion Gain
High Gain
Bypass
G
-
-
18.1
-3.6
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.8
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
2.8
4.0
-
-
mA
A
Rbias R1 Value
-
2.0
-
k
Rstability R2 Value
-
680
-
Input Return Loss
High Gain
Bypass
S11
-
-
-13.5
-9.0
-
-
dB
Gain
High Gain
Bypass
S21
-
-
17.9
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-22.9
-4.3
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-10.8
-7.2
-
-
dB
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
14
Freescale Semiconductor
3.2
1960 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 17 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1960 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
CC
is listed in
Table 7
.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
CC
. Values of external resistors R1 and R2 are varied to adjust I
CC
and IP3.
Figure 10. 1960 MHz LNA Application Schematic
Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
, R2 = 3.3 k
Frequency
f
-
1960
-
MHz
Power Gain
High Gain
Bypass
G
-
-
16
-4.5
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
22
20.5
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
5.5
25
-
-
dBm
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
1960 MHz LNA
L1
4.3 nH
C1
33pF
C2
0.9pf
L2
2.7 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC
NC
NC
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
15
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10.5
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-6.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
16.8
-3.7
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.26
2.5
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
4.45
10
-
-
mA
A
Rbias R1 Value
-
1.2
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-9.7
-8.7
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.6
-3.8
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-21.7
-4.2
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-14.6
-6.3
-
-
dB
R1 = 2.0 k
, R2 = 3.3 k
Frequency
f
-
1960
-
MHz
Power Gain
High Gain
Bypass
G
-
-
16.4
-4.0
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
17.4
21
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
1.0
25
-
-
dBm
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
16
Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10.4
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-6.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
16.5
-3.7
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.7
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
2.8
4.0
-
-
mA
A
Rbias R1 Value
-
2.0
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-9.2
-9.8
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.6
-3.9
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-21.1
-4.0
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-25
-7.8
-
-
dB
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
17
3.3
2140 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
CC
is listed in
Table 8
.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
CC
. Values of external resistors R1 and R2 are varied to adjust I
CC
and IP3.
Figure 11. 2140 MHz LNA Application Schematic
Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
, R2 = 3.3 k
Frequency
f
-
2140
-
MHz
Power Gain
High Gain
Bypass
G
-
-
15.7
-3.4
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
20.7
16.4
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
5.0
20
-
-
dBm
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
2140 MHz LNA
L1
4.3 nH
C1
33pF
C2
0.9pf
L2
2.7 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC
NC
NC
Application Information
MC13820 Technical Data, Rev. 1.1
18
Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-5.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14.8
-3.4
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.49
3.4
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
4.45
10
-
-
mA
A
Rbias R1 Value
-
1.2
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-8.5
-8.9
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.5
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-22.2
-4.5
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-12.5
-6.1
-
-
dB
R1 = 2.0 k
, R2 = 3.3 k
Frequency
f
-
2140
-
MHz
Power Gain
High Gain
Bypass
G
-
-
15.7
-3.2
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
19.7
21.3
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
3.5
24.5
-
-
dBm
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
19
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-5.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14.8
-3.5
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.3
3.2
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
2.8
10
-
-
mA
A
Rbias R1 Value
-
2.0
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-13.7
-17.1
-
-
dB
Gain
High Gain
Bypass
S21
-
-
15.5
-3.0
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-20.9
-3.3
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-12.1
-14.6
-
-
dB
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
20
Freescale Semiconductor
3.4
2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
CC
is listed in
Table 9
.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
CC
. Values of external resistors R1 and R2 are varied to adjust I
CC
and IP3.
Figure 12. 2400 MHz LNA Application Schematic
Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
, R2 = 3.3 k
Frequency
f
-
2400
-
MHz
Power Gain
High Gain
Bypass
G
-
-
14
-3.8
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
21
19
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
7.0
22
-
-
dBm
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
2400 MHz LNA
L1
2.7 nH
C1
33pF
C2
0.6pf
L2
2.4 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC
NC
NC
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
21
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-4.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14
-3.8
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.55
3.8
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
4.45
10
-
-
mA
A
Rbias R1 Value
-
1.2
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-8.5
-8.9
-
-
dB
Gain
High Gain
Bypass
S21
-
-
14.5
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-20.2
-4.0
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-11
-7.0
-
-
dB
R1 = 2.0 k
, R2 = 3.3 k
Frequency
f
-
2400
-
MHz
Power Gain
High Gain
Bypass
G
-
-
14
-3.6
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
18.5
20
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
4.0
24
-
-
dBm
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Application Information
MC13820 Technical Data, Rev. 1.1
22
Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P
1dBout
-
-
10
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P
1dBin
-
-
-4.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14
-4.0
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.49
4.2
-
-
dB
Current Drain
High Gain
Bypass
I
CC
-
-
2.8
10
-
-
mA
A
Rbias R1 Value
-
2.0
-
k
Rstability R2 Value
-
3.3
-
k
Input Return Loss
High Gain
Bypass
S11
-
-
-10
-9.7
-
-
dB
Gain
High Gain
Bypass
S21
-
-
14
-3.6
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-20
-3.8
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-10
-9.1
-
-
dB
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic Symbol
Min
Typ
Max
Unit
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
23
4
Printed Circuit Board
Figure 13. Front Side
Figure 14. Back Side
Q1
L1
L2
C2
C3
C4
C1
R2
R1
NOT E: COMPON EN TS C5 AND C6 ARE LOCATED ON THE BACK OF T HE BOARD
MBC1 3720/21
V2R1
C5 C6
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
24
Freescale Semiconductor
Table 10. Bill of Materials
Component
Value
Case
Manufacturer
Comments
1575 MHz
C1
22 pF
402
Murata
Input match
C2
1.0 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 F
402
Murata
Low freq bypass
C5
.01 F
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L2
5.6 nH
1005
CoilCraft
Output match
L1
5.6 nH
1005
CoilCraft
Input match
R1
1.2 or 2 k
402
KOA
Bias for 4.45 or 2.8 mA
R2
680
402
KOA
Stability
Q1
MC13820
QFN-12
Freescale
1960 MHz
C1
33 pF
402
Murata
Input match
C2
0.9 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 F
402
Murata
Low freq bypass
C5
.01 F
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
Coilcraft
Output match
R1
1.2 or 2 k
402
KOA
Bias for 4.45 or 2.8 mA
R2
3.3 k
402
KOA
Stability
Q1
MC13820
QFN-12
Freescale
2140 MHz
C1
33 pF
402
Murata
Input match
C2
0.9 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 F
402
Murata
Low freq bypass
C5
.01 F
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
4.3 nH
1005
CoilCraft
Input match
L2
2.7 nH
1005
CoilCraft
Output match
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
25
R2
3.3 k
402
KOA
Stability
R1
1.2 or 2 k
402
KOA
Bias for 4.45 or 2.8 mA
Q1
MC13820
QFN-12
Freescale
2400 MHz
C1
33 pF
402
Murata
Input match
C2
0.6 pF
402
Taiyo Yuden
Output match
C3
33 pF
402
Murata
RF bypass
C4
.01 F
402
Murata
Low freq bypass
C5
.01 F
402
Murata
Low freq bypass
C6
33 pF
402
Murata
RF bypass
L1
2.7 nH
1005
CoilCraft
Input match
L2
2.4 nH
1005
CoilCraft
Output match
R2
1.2 or 2 k
402
KOA
Bias for 4.45 or 2.8 mA
R1
3.3 k
402
KOA
Stability
Q1
MC13820
QFN-12
Freescale
Table 10. Bill of Materials (continued)
Component
Value
Case
Manufacturer
Comments
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
26
Freescale Semiconductor
5
Scattering Parameters
Table 11. Active Mode Scattering Parameters
(V
CC
1
and V
CC3
= 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 k
), I
CC
= 2.6 mA
f
GHz)
S
11
S
21
S
12
S
22
|S
11
|
|S
11
|
|S
11
|
|S
11
|
0.7
0.852
-29.22
7.029
142.03
0.021
75.16
0.956
-14.42
0.8
0.836
-32.9
7.279
137.43
0.024
73.13
0.946
-15.76
0.9
0.803
-36.02
7.034
133.48
0.027
70.95
0.966
-19.49
1
0.814
-42.84
6.856
127
0.029
66.71
0.887
-17.77
1.1
0.782
-42.6
6.687
125.21
0.031
68.53
0.924
-22.03
1.2
0.772
-45.55
6.29
122.03
0.034
65.83
0.898
-23.58
1.3
0.752
-47.28
6.242
116.95
0.036
65.66
0.897
-25.56
1.4
0.718
-50.24
6.082
114.12
0.039
64.76
0.912
-26.44
1.5
0.672
-52.29
5.696
112.14
0.04
61.29
0.943
-30.51
1.6
0.688
-49.98
5.662
107.49
0.043
61.9
0.882
-35.18
1.7
0.695
-53.95
5.499
104.8
0.044
60.95
0.865
-35.67
1.8
0.686
-54.86
5.348
101.62
0.047
60.42
0.866
-36.55
1.9
0.653
-57.19
5.334
97.81
0.05
59.47
0.892
-41.25
2
0.661
-57.81
5.098
95.37
0.052
60.14
0.863
-42.78
2.1
0.646
-60.4
5.035
90.65
0.058
56
0.844
-46.94
2.2
0.639
-62.48
4.766
86.29
0.058
52.65
0.818
-49.01
2.3
0.628
-61.9
4.575
86.75
0.059
51.95
0.8
-50.61
2.4
0.608
-63.13
4.529
82.12
0.06
52.38
0.78
-51.67
2.5
0.61
-63.96
4.366
79.31
0.063
53.62
0.779
-52.93
2.6
0.609
-65.96
4.251
77.33
0.067
51.2
0.777
-54.38
2.7
0.637
-69.48
4.307
75.4
0.072
50.86
0.811
-57.38
2.8
0.57
-74.63
4.168
68.94
0.073
46.36
0.756
-63.02
2.9
0.536
-75.03
3.933
65.73
0.075
42.72
0.716
-62.94
3
0.515
-75.6
3.819
62.83
0.074
42.14
0.697
-64.16
3.1
0.506
-75.28
3.665
61.56
0.074
39.24
0.683
-63.26
3.2
0.489
-73.7
3.572
60.5
0.07
39.17
0.702
-63.69
3.3
0.483
-74.54
3.523
58.09
0.07
43.49
0.716
-66.71
3.4
0.487
-76.91
3.495
55.25
0.075
46.63
0.714
-70.44
3.5
0.488
-78.25
3.484
51.93
0.082
45.9
0.699
-74.6
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
27
Table 12. Bypass Mode Scattering Parameters
((V
CC1
and V
CC3
= 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 k
), I
CC
= 3.0 A)
f
(GHz)
S
11
S
21
S
12
S
22
|S
11
|
|S
11
|
|S
11
|
|S
11
|
0.7
0.549
-51.13
0.578
17.83
0.583
18.83
0.578
-41.21
0.8
0.511
-53.94
0.596
13.17
0.6
14.15
0.542
-42.25
0.9
0.47
-55.73
0.608
8.45
0.614
10.08
0.524
-45.13
1
0.458
-59.65
0.615
3.3
0.617
5.12
0.455
-43.82
1.1
0.434
-58.46
0.624
1.11
0.628
2.52
0.453
-46.74
1.2
0.421
-59.33
0.629
-2.37
0.635
-0.96
0.42
-48.02
1.3
0.404
-59.6
0.634
-5.19
0.639
-3.8
0.407
-48.56
1.4
0.384
-61.06
0.633
-8.02
0.639
-6.66
0.394
-47.62
1.5
0.36
-62.48
0.638
-10.97
0.641
-9.5
0.388
-49.7
1.6
0.362
-59.49
0.638
-13.09
0.643
-11.89
0.374
-53.61
1.7
0.367
-60.21
0.639
-15.43
0.643
-14.26
0.353
-53.66
1.8
0.363
-60.18
0.64
-17.77
0.645
-16.58
0.335
-53.3
1.9
0.35
-63.26
0.645
-20.27
0.649
-19.08
0.348
-53.86
2
0.355
-63.18
0.639
-22.63
0.643
-21.39
0.327
-54.83
2.1
0.335
-66.36
0.64
-24.42
0.643
-23.2
0.342
-57.82
2.2
0.332
-65.87
0.64
-26.93
0.645
-25.56
0.324
-60.95
2.3
0.322
-63.97
0.64
-28.95
0.644
-27.79
0.309
-63.15
2.4
0.32
-63.46
0.639
-31.11
0.642
-30.01
0.294
-64.43
2.5
0.319
-63.28
0.632
-33.88
0.638
-32.07
0.279
-64.25
2.6
0.323
-63.96
0.627
-35.14
0.633
-33.64
0.274
-62.49
2.7
0.354
-65.66
0.64
-36.78
0.645
-35.11
0.297
-62.47
2.8
0.317
-73.59
0.637
-40.56
0.643
-38.92
0.282
-72.82
2.9
0.296
-74.61
0.622
-42.77
0.629
-41.1
0.245
-73.08
3
0.284
-74.6
0.616
-44.14
0.621
-42.65
0.23
-70.36
3.1
0.283
-72.89
0.616
-45.7
0.619
-43.94
0.236
-67.03
3.2
0.274
-72.04
0.618
-47.38
0.622
-45.84
0.245
-68.8
3.3
0.269
-74.74
0.618
-50.21
0.623
-48.62
0.238
-75.51
3.4
0.265
-77.34
0.609
-52.62
0.615
-51.03
0.212
-77.5
3.5
0.261
-76.71
0.603
-54.36
0.607
-52.96
0.194
-77.94
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
28
Freescale Semiconductor
Table 13. Active Mode Scattering Parameters
(V
CC1
and V
CC3
= 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 k
, I
CC
= 4.8 mA)
f
(GHz)
S
11
S
21
S
12
S
22
|S
11
|
|S
11
|
|S
11
|
|S
11
|
0.7
0.784
-32.04
10.275
132.74
0.021
72.91
0.92
-15.77
0.8
0.765
-35.9
10.162
127.59
0.022
71.83
0.907
-16.82
0.9
0.721
-39
9.646
122.89
0.025
68.97
0.923
-20.31
1
0.724
-45.16
9.184
116.28
0.027
67.34
0.842
-18.21
1.1
0.692
-44.87
8.773
114.36
0.029
67.52
0.877
-22.39
1.2
0.678
-47.17
8.23
110.64
0.033
67.56
0.846
-23.69
1.3
0.662
-48.64
7.98
106.21
0.034
66.62
0.845
-25.47
1.4
0.626
-51.75
7.638
103.36
0.037
64.27
0.858
-25.98
1.5
0.576
-53.11
7.185
100.91
0.039
63.47
0.893
-29.67
1.6
0.594
-49.59
6.972
96.71
0.041
62.78
0.835
-34.46
1.7
0.599
-52.85
6.691
93.81
0.042
62.14
0.816
-34.49
1.8
0.594
-54.14
6.444
90.92
0.044
62.34
0.817
-35.3
1.9
0.56
-56.18
6.34
87.3
0.049
60.88
0.843
-39.86
2
0.568
-57.13
6.029
85.12
0.05
60.42
0.817
-41.18
2.1
0.548
-58.62
5.885
80.96
0.054
57.9
0.798
-45.47
2.2
0.546
-59.79
5.568
76.96
0.056
56.61
0.774
-46.98
2.3
0.543
-59.25
5.318
76.8
0.057
54.83
0.761
-48.63
2.4
0.532
-59.9
5.189
72.95
0.059
54.79
0.742
-49.56
2.5
0.527
-61.63
4.979
70.13
0.062
53.59
0.741
-50.7
2.6
0.529
-62.78
4.816
68.35
0.064
53.44
0.743
-52
2.7
0.551
-67.21
4.839
66.22
0.072
52.3
0.768
-55.57
2.8
0.485
-70.76
4.649
60.62
0.072
47.22
0.715
-60.12
2.9
0.454
-71.28
4.382
57.65
0.074
44.14
0.68
-60.09
3
0.434
-70.94
4.207
55.39
0.072
42.21
0.666
-60.36
3.1
0.433
-67.82
4.048
54.44
0.068
41.81
0.669
-60.12
3.2
0.436
-66.18
3.936
52.8
0.069
43.96
0.674
-61.04
3.3
0.437
-68.3
3.847
50.72
0.072
47.68
0.684
-63.24
3.4
0.437
-72.51
3.81
48.36
0.078
46.81
0.687
-66.49
3.5
0.433
-73.15
3.767
45.48
0.082
45.71
0.676
-70.55
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
29
Table 14. Bypass Mode Scattering Parameters
(V
CC1
and V
CC3
= 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 k
, I
CC
= 3 A)
f
(GHz)
S
11
S
21
S
12
S
22
|S
11
|
|S
11
|
|S
11
|
|S
11
|
0.7
0.556
-44.11
0.573
20.27
0.573
20.39
0.595
-42.94
0.8
0.514
-46.8
0.591
15.11
0.591
15.3
0.549
-43.78
0.9
0.475
-49.46
0.6
10.38
0.599
10.66
0.511
-43.02
1
0.459
-50.05
0.618
6.77
0.617
6.98
0.479
-46.66
1.1
0.427
-50.66
0.623
3.34
0.621
3.51
0.462
-47.17
1.2
0.412
-51.99
0.633
-0.34
0.632
-0.19
0.43
-49.25
1.3
0.391
-52.85
0.635
-3.09
0.634
-2.98
0.421
-49.35
1.4
0.379
-53.91
0.637
-6.45
0.636
-6.18
0.395
-50.53
1.5
0.368
-53.94
0.638
-8.92
0.638
-8.66
0.384
-51.37
1.6
0.358
-54.86
0.64
-11.49
0.639
-11.33
0.374
-52.64
1.7
0.352
-55.36
0.641
-14.09
0.64
-13.92
0.358
-53.9
1.8
0.346
-55.58
0.641
-16.37
0.641
-16.17
0.345
-54.87
1.9
0.341
-55.61
0.641
-18.68
0.641
-18.47
0.334
-56.07
2
0.334
-56.07
0.638
-20.97
0.639
-20.85
0.321
-56.45
2.1
0.329
-56.92
0.635
-23.12
0.633
-22.91
0.312
-56.2
2.2
0.319
-57.96
0.636
-24.75
0.636
-24.45
0.314
-57.47
2.3
0.308
-57.61
0.64
-26.81
0.64
-26.59
0.306
-59.76
2.4
0.299
-57.89
0.641
-29.13
0.64
-28.92
0.295
-61.28
2.5
0.293
-59.25
0.64
-31.4
0.642
-31.04
0.291
-62.5
2.6
0.285
-60.49
0.636
-33.55
0.636
-33.11
0.277
-62.84
2.7
0.279
-62.48
0.636
-35.59
0.635
-35.51
0.272
-65.72
2.8
0.274
-64.02
0.634
-37.84
0.633
-37.69
0.258
-67.26
2.9
0.267
-66.58
0.629
-39.74
0.63
-39.66
0.247
-67.95
3
0.27
-68.28
0.623
-42.19
0.623
-42.06
0.232
-68.55
3.1
0.264
-70.53
0.618
-43.48
0.616
-43.19
0.241
-64.77
3.2
0.261
-72.44
0.617
-45.42
0.616
-45.19
0.241
-69.24
3.3
0.26
-73.31
0.616
-47.61
0.615
-47.35
0.227
-74.2
3.4
0.26
-73.49
0.613
-49.49
0.613
-49.26
0.209
-76.39
3.5
0.265
-73.26
0.61
-52.15
0.61
-51.84
0.179
-78.56
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
30
Freescale Semiconductor
Table 15. Noise Parameters
(V
CC
= 2.7 V, Enable = 2.75 V, Rbias = 1.2 k
,
I
CC
= 4.8 mA)
f
(GHz)
NFmin
(dB)
Gamma Opt
Rn
(
)
rn
(
)
G
NF
(dB)
K
Mag
Ang
1
1.11
0.27
25.3
14
0.28
26.21
0.63
1.575
0.99
0.29
40.8
13
0.26
22.63
0.74
1.9
0.96
0.30
46.9
12.5
0.25
20.83
0.70
2.14
0.96
0.30
50.1
12.5
0.25
19.8
0.78
2.4
0.97
0.30
54.0
12
0.24
18.3
0.89
Table 16. Noise Parameters
(V
CC
= 2.7 V, Enable = 2.75 V, Rbias = 2 k
,
I
CC
= 2.8 mA)
f
(GHz)
NFmin
(dB)
Gamma Opt
Rn
(
)
rn
(
)
G
NF
(dB)
K
Mag
Ang
1
1.16
0.23
27.6
15.5
0.31
26.09
0.48
1.575
1.02
0.35
39.0
15
0.3
22.57
0.56
1.9
0.97
0.37
46.2
14
0.28
20.81
0.53
2.14
0.96
0.37
49.7
14
0.28
19.79
0.61
2.4
0.95
0.37
54.1
13.5
0.27
18.3
0.77
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
31
Figure 15. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 k
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 k
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
1.575
1.02
0.30/_38.2
13.5
0.74
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
1.575
0.97
0.34/_39.1
17.0
0.56
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
32
Freescale Semiconductor
Figure 17. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 k
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 k
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
1.9
0.96
0.30/_46.9
12.5
0.68
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
1.9
0.97
0.37/_46.2
14.0
0.50
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
33
Figure 19. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
2.1
0.96
0.30/_50.1
12.5
0.76
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
2.1
0.96
0.37/_49.7
14.0
0.58
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
34
Freescale Semiconductor
Figure 21. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 k
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 k
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
2.3
0.96
0.30/_52.8
12.0
0.85
(shaded regions are potentially unstable)
f(GHz)
NFmin
Gamma-Opt
Rn (
)
K
2.3
0.95
0.38/_53
13.5
0.70
Packaging
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
35
6
Packaging
Figure 23. Outline Dimensions for QFN-12
(Case Outline 1345-01, Issue A)
LASER MARK FOR PIN 1
IDENTIFICATION IN
THIS AREA
3
B
C
0.1
2X
2X
C
0.1
A
3
G
M
M
1.0 1.00
0.05
C
0.1
C
0.05
C
SEATING PLANE
5
DETAIL G
VIEW ROTATED 90 CLOCKWISE
(0.5)
(0.24)
0.8 0.75
0.00
PIN 1 BACKSIDE IDENTIFIER
DETAIL M
DETAIL S
8X
(0.777)
4X
(0.25)
DETAIL S
PIN 1 BACKSIDE IDENTIFIER
(90)
2X
2X
0.39
0.31
0.1
0.0
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF-PQFP-N.
4. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE FOR
REFERENCE ONLY.
5. COPLANARITY APPLIES TO LEADS, CORNER LEADS,
AND DIE ATTACH PAD.
N
EXPOSED DIE
ATTACH PAD
10
3
1
12
0.95
8X
0.5
9
7
6
4
M
0.1
C
M
0.05
C
A B
12X
0.75
0.5
C
0.1
A B
VIEW M-M
DETAIL M
PIN 1 IDENTIFIER
1.25
0.95
1.25
C
0.1
A B
12X
0.3
0.18
4
CORNER CONFIGURATION
DETAIL N
(0.18)
4X
(1.177)
8X
(45)
4X
0.065
0.015
12X
(R0.09)
3X
Product Documentation
MC13820 Technical Data, Rev. 1.1
36
Freescale Semiconductor
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com.
Table 17
summarizes revisions made to this document since Rev. 1.0 was released.
Table 17. Revision History
Location
Revision
Section 1.1, "Features
",
on page 1
Updated text.
Table 1
Maximum Ratings
Updated Thermal Resistance, Junction to Case and added Thermal
Resistance, Junction to Ambient, 4 layer board.
Table 2
Recommended Operating Conditions Updated Logic Voltage.
Table 5
Truth Table
Added notes.
Table 6
Typical 1575 MHz LNA Demo Board
Performance
Updated Current Drain Typ numbers.
Table 7
Typical 1960 MHz LNA Demo Board
Performance
Updated Current Drain.
Table 8
Typical 2140 MHz LNA Demo Board
Performance
Updated to R1 = 2.0 k
, R2 = 3.3 k.
Table 9
Typical 2400 MHz LNA Demo Board
Performance
Updated to R1 = 2.0 k
, R2 = 3.3 k.
Table 10
Bill of Materials
Updated 1575 MHz R1, 1960 MHz R1, 2140 MHz R1, and 2400 MHz R2.
Figure 13
Front Side of Printed Circuit Board Updated.
NOTES
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
37
Document Number: MC13820/D
Rev. 1.1
09/2005
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Freescale sales representative.

For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.