MHL9236N
1
RF Device Data
Freescale Semiconductor
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in
50 ohm system
s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
Third Order Intercept: 47 dBm Typ
Power Gain: 30.5 dB Typ (@ f = 880 MHz)
Input and Output VSWR v 1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA, CDMA, QPSK or Analog Systems
N Suffix Indicates Lead-Free Terminations
Table 1. Absolute Maximum Ratings
(T
C
= 25C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+10
dBm
Storage Temperature Range
T
stg
- 40 to +100
C
Operating Case Temperature Range
T
C
- 20 to +100
C
Table 2. Electrical Characteristics
(V
DD
= 26 Vdc, T
C
= 25C; 50 System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
--
550
620
mA
Power Gain
(f = 880 MHz)
G
p
29
30.5
32
dB
Gain Flatness
(f = 800 - 960 MHz)
G
F
--
0.1
0.3
dB
Power Output @ 1 dB Compression
(f = 880 MHz)
P1dB
33
34
--
dBm
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
46
47
--
dBm
Noise Figure
(f = 800-960 MHz)
NF
--
3.5
4.5
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MHL9236N
Rev. 8, 8/2006
Freescale Semiconductor
Technical Data
MHL9236N
800 - 960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP-02, STYLE 1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MHL9236N
TYPICAL CHARACTERISTICS
P1dB, IT
O
(dBm)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
f, FREQUENCY (MHz)
-40
0
Figure 2. P1dB, ITO versus Frequency
30
800
f, FREQUENCY (MHz)
50
40
400
1600
400
Figure 3. Power Gain, I
DD
versus Temperature
TEMPERATURE (C)
27
Figure 4. ITO, P1dB versus Temperature
Figure 5. Phase
(1)
, Group Delay
(1)
versus Temperature
-40
-440
-420
40
29
31
20
-20
20
800
1200
600
1000
120
-450
2000
IRL
33
28
30
32
40
50
42
44
48
-430
POWER GAIN/RETURN LOSS (dB)
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
0.10
0.30
0
0.20
35
45
1200
, POWER GAIN (dB)
60
(
PHASE
0.20
0.40
0.50
0.30
ORL
G
p
V
DD
= 26 Vdc
T
C
= 25C
ITO
P1dB
I
560
575
565
580
570
0
40
100
-20
80
G
p
I
DD
V
DD
= 26 Vdc
f = 880 MHz
TEMPERATURE (C)
-40
20
120
60
0
40
100
-20
80
ITO
P1dB
-445
-425
-435
)
GROUP
DELA
Y
(nS)
1.9
2.1
2.2
2.0
TEMPERATURE (C)
-40
20
120
60
0
40
100
-20
80
PHASE
GROUP DELAY
1. In Production Test Fixture
, GAIN FLA
TNESS
(dB)
(
PHASE LINEARITY
)
TEMPERATURE (C)
-40
20
120
60
0
40
100
-20
80
V
DD
= 26 Vdc
f = 800-960 MHz
G
F
PHASE LINEARITY
G
p
DD
, (mA)
IT
O (dBm)
P1dB (dBm)
33
35
46
34.5
34
33.5
G
F
V
DD
= 26 Vdc
T
C
= 25C
V
DD
= 26 Vdc
f = 880 MHz
V
DD
= 26 Vdc
f = 880 MHz
MHL9236N
5
RF Device Data
Freescale Semiconductor
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Document Number: MHL9236N
Rev. 8, 8/2006
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