MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large -signal, common source amplifier applications in
12.5 volt mobile FM equipment.
· Specified Performance @ 175 MHz, 12.5 Volts

Output Power -- 50 Watts

Power Gain -- 12 dB

Efficiency -- 50%

· Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
· Excellent Thermal Stability
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Broadband -Full Power Across the Band: 135-175 MHz
· Broadband Demonstration Amplifier Information Available

Upon Request

· 200_C Capable Plastic Package
· N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
· In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +40

Vdc

Gate-Source Voltage

±20

Vdc

Drain Current -- Continuous

Adc

Total Device Dissipation @ T

= 25°C

(1)

Derate above 25°C

165

0.50

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2)

Unit

Thermal Resistance, Junction to Case

0.75

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

1. Calculated based on the formula P

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF1550N

Rev. 11, 9/2006

Freescale Semiconductor

Technical Data

175 MHz, 50 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

MRF1550NT1

MRF1550FNT1

CASE 1264-09, STYLE 1

TO-272-6 WRAP

PLASTIC

MRF1550NT1

CASE 1264A-02, STYLE 1

TO-272-6

PLASTIC

MRF1550FNT1

TJ TC

RJC

RF Device Data

Freescale Semiconductor

MRF1550NT1 MRF1550FNT1

Table 4. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

= 60 Vdc, V

= 0 Vdc)

DSS

Adc

Gate-Source Leakage Current

= 10 Vdc, V

= 0 Vdc)

GSS

0.5

Adc

On Characteristics

Gate Threshold Voltage

= 12.5 Vdc, I

= 800 A)

GS(th)

Vdc

Drain-Source On-Voltage

= 5 Vdc, I

= 1.2 A)

DS(on)

0.5

Drain-Source On-Voltage

= 10 Vdc, I

= 4.0 Adc)

DS(on)

Vdc

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)

= 12.5 Vdc, V

= 0 V, f = 1 MHz)

iss

500

Output Capacitance

= 12.5 Vdc, V

= 0 V, f = 1 MHz)

oss

250

Reverse Transfer Capacitance

= 12.5 Vdc, V

= 0 V, f = 1 MHz)

rss

RF Characteristics (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

= 12.5 Vdc, P

out

= 50 Watts, I

= 500 mA)

f = 175 MHz

14.5

Drain Efficiency

= 12.5 Vdc, P

out

= 50 Watts, I

= 500 mA)

f = 175 MHz

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

Figure 1. 135 - 175 MHz Broadband Test Circuit

Ferroxcube #VK200

180 pF, 100 mil Chip Capacitor

10 pF, 100 mil Chip Capacitor

33 pF, 100 mil Chip Capacitor

C4, C16

24 pF, 100 mil Chip Capacitors

160 pF, 100 mil Chip Capacitor

240 pF, 100 mil Chip Capacitor

C7, C17

300 pF, 100 mil Chip Capacitors

C8, C18

10 F, 50 V Electrolytic Capacitors

C9, C19

0.1 F, 100 mil Chip Capacitors

C10

470 pF, 100 mil Chip Capacitor

C11, C12

200 pF, 100 mil Chip Capacitors

C13

22 pF, 100 mil Chip Capacitor

C14

30 pF, 100 mil Chip Capacitor

C15

6.8 pF, 100 mil Chip Capacitor

C20

1,000 pF, 100 mil Chip Capacitor

18.5 nH, Coilcraft #A05T

5 nH, Coilcraft #A02T

1 Turn, #24 AWG, 0.250 ID

1 Turn, #26 AWG, 0.240 ID

3 Turn, #24 AWG, 0.180 ID

N1, N2

Type N Flange Mounts

5.1 , 1/4 W Chip Resistor

39 Chip Resistor (0805)

1 k, 1/8 W Chip Resistor

33 k, 1/4 W Chip Resistor

1.000 x 0.080 Microstrip

0.400 x 0.080 Microstrip

0.200 x 0.080 Microstrip

Z5, Z6

0.100 x 0.223 Microstrip

0.160 x 0.080 Microstrip

0.260 x 0.080 Microstrip

0.280 x 0.080 Microstrip

Z10

0.270 x 0.080 Microstrip

Z11

0.730 x 0.080 Microstrip

Board

Glass Teflon

, 31 mils

INPUT

RF
OUTPUT

C17

DUT

Z10

Z11

C21

C18

C10

C19

C20

C15

C13

C16

C14

C12

C11

TYPICAL CHARACTERISTICS

out

, OUTPUT POWER (WATTS)

IRL,

INPUT

RETURN LOSS (dB)

-5

-15

-20

-10

Figure 2. Output Power versus Input Power

, INPUT POWER (WATTS)

Figure 3. Input Return Loss

versus Output Power

3.0

P out

OUTPUT

POWER (W

TTS)

5.0

1.0

175 MHz

155 MHz

4.0

6.0

2.0

135 MHz

155 MHz

175 MHz

135 MHz

= 12.5 Vdc

RF Device Data

Freescale Semiconductor

MRF1550NT1 MRF1550FNT1

TYPICAL CHARACTERISTICS

out

, OUTPUT POWER (WATTS)

175 MHz

155 MHz

Figure 4. Gain versus Output Power

out

, OUTPUT POWER (WATTS)

Figure 5. Drain Efficiency versus Output Power

GAIN (dB)

Figure 6. Output Power versus Biasing Current

, BIASING CURRENT (mA)

Figure 7. Drain Efficiency versus

Biasing Current

, BIASING CURRENT (mA)

Figure 8. Output Power versus Supply Voltage

, SUPPLY VOLTAGE (VOLTS)

Figure 9. Drain Efficiency versus Supply Voltage

, SUPPLY VOLTAGE (VOLTS)

400

600

1000

200

P out

OUTPUT

POWER (W

TTS)

200

1000

400

600

P out

OUTPUT

POWER (W

TTS)

135 MHz

175 MHz

155 MHz

175 MHz

135 MHz

155 MHz

175 MHz

135 MHz

= 12.5 Vdc

= 35 dBm

= 500 mA

= 35 dBm

= 12.5 Vdc

= 35 dBm

= 12.5 Vdc

800

175 MHz

155 MHz

135 MHz

1200

= 500 mA

= 35 dBm

155 MHz

175 MHz

135 MHz

, DRAIN EFFICIENCY

(%)

, DRAIN EFFICIENCY

(%)

, DRAIN EFFICIENCY

(%)

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

Table 5. Common Source Scattering Parameters (V

= 12.5 Vdc)

= 500 mA

MHz

0.93

-178

4.817

0.009

-39

0.86

-176

100

0.94

-178

2.212

0.009

-3

0.88

-175

150

0.95

-178

1.349

0.008

-8

0.90

-174

200

0.95

-178

0.892

0.006

-13

0.92

-174

250

0.96

-178

0.648

0.005

-7

0.93

-174

300

0.97

-178

0.481

0.004

-8

0.95

-174

350

0.97

-178

0.370

0.005

0.95

-174

400

0.98

-178

0.304

0.001

0.97

-174

450

0.98

-178

0.245

0.005

0.97

-174

500

0.98

-178

0.209

0.003

0.97

-174

550

0.99

-177

0.178

0.007

0.98

-175

600

0.98

-178

0.149

0.010

106

0.96

-175

= 2.0 mA

MHz

0.93

-177

4.81

0.003

-119

0.93

-178

100

0.94

-178

2.20

0.006

0.93

-178

150

0.95

-178

1.35

0.003

-1

0.93

-177

200

0.95

-178

0.89

0.004

0.93

-176

250

0.96

-178

0.65

0.001

0.94

-176

300

0.97

-178

0.48

0.004

0.94

-175

350

0.97

-178

0.37

0.006

0.95

-175

400

0.98

-178

0.30

0.007

0.96

-174

450

0.98

-178

0.25

0.006

0.97

-174

500

0.98

-177

0.21

0.006

0.97

-174

550

0.99

-177

0.18

0.002

106

0.97

-175

600

0.98

-178

0.15

0.004

116

0.96

-174

= 4.0 mA

MHz

0.97

-179

5.04

0.002

-116

0.94

-179

100

0.96

-179

2.43

0.006

0.94

-178

150

0.96

-179

1.60

0.004

0.94

-177

200

0.96

-179

1.14

0.003

0.95

-176

250

0.97

-179

0.89

0.004

0.95

-175

300

0.97

-179

0.71

0.006

0.95

-175

350

0.97

-179

0.57

0.006

0.97

-174

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

APPLICATIONS INFORMATION

DESIGN CONSIDERATIONS

This device is a common-source, RF power, N-Channel

enhancement mode, Lateral Metal -Oxide Semiconductor
Field -Effect Transistor (MOSFET). Freescale Application
Note AN211A, "FETs in Theory and Practice", is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.

This surface mount packaged device was designed pri-

marily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to in-
sure proper heat sinking of the device.

The major advantages of Lateral RF power MOSFETs in-

clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

between all three terminals. The metal oxide gate structure
determines the capacitors from gate -to -drain (C

), and

gate-to-source (C

). The PN junction formed during fab-

rication of the RF MOSFET results in a junction capacitance
from drain-to-source (C

). These capacitances are charac-

terized as input (C

iss

), output (C

oss

) and reverse transfer

rss

)

capacitances on data sheets. The relationships be-

tween the inter-terminal capacitances and those given on
data sheets are shown below. The C

iss

can be specified in

two ways:

1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero

volts at the gate.

In the latter case, the numbers are lower. However, neither

method represents the actual operating conditions in RF ap-
plications.

Drain

Source

Gate

iss

= C

+ C

oss

= C

+ C

rss

= C

DRAIN CHARACTERISTICS

One critical figure of merit for a FET is its static resistance

in the full-on condition. This on-resistance, R

DS(on)

, occurs

in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The

drain - source voltage under these conditions is termed
V

DS(on)

. For MOSFETs, V

DS(on)

has a positive temperature

coefficient at high temperatures because it contributes to the
power dissipation within the device.

DSS

values for this device are higher than normally re-

quired for typical applications. Measurement of BV

DSS

is not

recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 10

-- resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage to

the gate greater than the gate-to-source threshold voltage,
V

GS(th)

Gate Voltage Rating -- Never exceed the gate voltage

rating. Exceeding the rated V

can result in permanent

damage to the oxide layer in the gate region.

Gate Termination -- The gates of these devices are es-

sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.

Gate Protection -- These devices do not have an internal

monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS

Since this device is an enhancement mode FET, drain cur-

rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (I

), whose value is application dependent.

This device was characterized at I

= 150 mA, which is the

suggested value of bias current for typical applications. For
special applications such as linear amplification, I

may

have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. There-

fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL

Power output of this device may be controlled to some de-

gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.

RF Device Data

Freescale Semiconductor

MRF1550NT1 MRF1550FNT1

AMPLIFIER DESIGN

Impedance matching networks similar to those used with

bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, "Impedance
Matching Networks Applied to RF Power Transistors."
Large -signal impedances are provided, and will yield a good
first pass approximation.

Since RF power MOSFETs are triode devices, they are not

unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt

resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.

Two - port stability analysis with this device's

S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, "RF Small-Signal Design
Using Two-Port Parameters" for a discussion of two port
network theory and stability.

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

TO-272-6 WRAP

PLASTIC

MRF1550NT1

ÇÇÇÇ

CASE 1264-09

ISSUE K

NOTES:

1. CONTROLLING DIMENSION: INCH .
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.

4. DIMENSION D AND E1 DO NOT INCLUDE MOLD

PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

5. DIMENSIONS b1 AND b3 DO NOT INCLUDE

DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.

6. CROSSHATCHING REPRESENTS THE EXPOSED

AREA OF THE HEAT SLUG.

aaa

SEATING

PLANE

DATUM

PLANE

SEATING

PLANE

DRAIN ID

aaa

D A

aaa

D A

DRAIN ID

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

0.098

0.108

2.49

2.74

INCHES

0.000

0.004

0.00

0.10

0.100

0.104

2.54

2.64

0.928

0.932

23.57

23.67

0.806

0.814

20.47

20.68

0.296

0.304

7.52

7.72

0.248

0.252

6.30

6.40

0.060

0.070

1.52

1.78

0.193

0.199

4.90

5.05

0.078

0.084

1.98

2.13

0.007

0.011

0.18

0.28

0.063

0.068

1.60

1.73

0 6 0

aaa

VIEW Y-Y

0.193 BSC

0.004

4.90 BSC

0.10

STYLE 1:

PIN 1. SOURCE (COMMON)

2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)

0.088

0.094

2.24

2.39

NOTE 6

0.241

0.245

6.12

6.22

RF Device Data

Freescale Semiconductor

MRF1550NT1 MRF1550FNT1

ÇÇÇÇ

CASE 1264A-02

ISSUE C

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD

PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

4. DIMENSIONS b1 AND b3 DO NOT INCLUDE

DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.

5. CROSSHATCHING REPRESENTS THE EXPOSED

AREA OF THE HEAT SLUG.

6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.

aaa

SEATING

PLANE

DRAIN ID

aaa

D A

aaa

D A

DRAIN ID

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

0.098

0.106

2.49

2.69

INCHES

0.038

0.044

0.96

1.12

0.926

0.934

23.52

23.72

0.492

0.500

12.50

12.70

0.246

0.254

6.25

6.45

0.126

0.134

3.20

3.40

0.193

0.199

4.90

5.05

0.088

0.094

2.24

2.39

0.007

0.011

0.178

0.279

bbb

VIEW Y-Y

0.193 BSC

0.008

4.90 BSC

0.20

STYLE 1:

PIN 1. SOURCE (COMMON)

2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)

0.078

0.084

1.98

2.13

NOTE 5

aaa

0.004

0.10

0.170 BSC

4.32 BSC

0.608 BSC

15.44 BSC

0.810 BSC

20.57 BSC

bbb

aaa

D A B

ZONE "J"

0.025 BSC

0.64 BSC

0.040

0.042

1.02

1.07

TO-272-6

PLASTIC

MRF1550FNT1

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

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Document Number: MRF1550N

Rev. 11, 9/2006

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Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF1550FNT1

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF1550FNT1