MRF18090BR3 MRF18090BSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain -- 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency -- 45% (Typ) @ 90 Watts (CW)
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
250
1.43
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Case Operating Temperature
T
C
150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18090B
Rev. 7, 5/2006
Freescale Semiconductor
Technical Data
MRF18090BR3
MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETS
CASE 465B-03, STYLE 1
NI-880
MRF18090BR3
CASE 465C-02, STYLE 1
NI-880S
MRF18090BSR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 Adc)
V
(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 750 mAdc)
V
GS(Q)
2.5
3.7
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.1
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
7.2
--
S
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
4.2
--
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain @ 90 W
(1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
G
ps
12
13.5
--
dB
Drain Efficiency @ 90 W
(1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
40
45
--
%
Input Return Loss
(1)
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA,
f = 1930 - 1990 MHz)
IRL
--
--
- 10
dB
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch
consistency.
MRF18090BR3 MRF18090BSR3
3
RF Device Data
Freescale Semiconductor
C1
1.0 mF Chip Capacitor (0805)
C2
1.0 nF Chip Capacitor (0805)
C3, C4
6.8 pF, 100B Chip Capacitors
C5
220 mF, 50 V Electrolytic Capacitor
C6, C7
12 pF, 100B Chip Capacitors
R1
2.2 kW Chip Resistor (0805)
R2, R3, R6
1.0 kW Chip Resistors (0805)
R4
10 k Chip Resistor (0805)
R5
6.8 k Chip Resistor (0805)
T1
BC847 SOT-23
Z1
0.85 x 0.09 Microstrip
Z2
Printed Inductance
Z3
Printed Inductance (Butterfly)
Z4
0.70 x 0.09 Microstrip
Z5
0.36 x 0.09 Microstrip
Z6
0.21 x 1.25 Microstrip
Z7
0.45 x 1.18 Microstrip
Z8
1.37 x 0.05 Microstrip
Z9
0.39 x 0.09 Microstrip
Z10
1.25 x 0.09 Microstrip
PCB
Teflon
Glass
Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic
Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout
RF
INPUT
RF
OUTPUT
Z1
V
GG
C6
C7
C1
Z6
DUT
V
DD
Z7
Z9
Z2
Z10
R5
C2
R6
C5
C3
+
Z4
R1
T1
Z8
C4
R2
R3
R4
Z3
Z5
R1
Ground
T1 R4
R5
R6
C6
C3
C7
Ground
C2
C4
R3
C1
MRF18090B
R2
VBIAS
VSUPPLY
C5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
4
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
Figure 3. 1.93 - 1.99 GHz Demo Board Schematic
C2
V
Ground
C1
R2
R1
R4
R6
T 1
R3
T2
C8
C10
C9
R5
C6
C7
C5
C4
C3
MRF18090B
SUPPLY
MRF18090B
C5
V
SUPPLY
C3
C1
R1
R2
R6
T1
R3
R4
Z3
T1
T2
C7
Z2
RF
INPUT
RF
OUTPUT
Z1
C8
Z4
+
C1, C3
1 mF Chip Capacitors (0805)
C2
0.1 mF Chip Capacitor (0805)
C4
1 nF Chip Capacitor (0805)
C5
220 mF, 50 V Electrolytic Capacitor
C6, C7
8.2 pF, 100A Chip Capacitors
C8, C9, C10
22 pF, 100A Chip Capacitors
R1
10 Chip Resistor (0805)
R2, R3
1 k Chip Resistors (0805)
R4
2.2 k Chip Resistor (0805)
R5
10 k Chip Resistor (0603)
R6
5 k, SMD Potentiometer
T1
LP2951 Micro-8 Voltage Regulator
T2
BC847 SOT-23 NPN Transistor
Z1
0.491 x 0.110 Microstrip
Z2
0.756 x 1.260 Microstrip
Z3
1.433 x 1.260 Microstrip
Z4
0.567 x 0.110 Microstrip
Substrate = 0.5 mm Teflon
Glass
R5
C2
C4
C6
C10
C9
Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
MRF18090BR3 MRF18090BSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL
1 W
P
in
= 5 W
Figure 5. Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS)
10
Figure 6. Output Power versus Supply Voltage
0
V
DD
, SUPPLY VOLTAGE (VOLTS)
140
40
G
ps
, POWER GAIN (dB)
12
1
P
Figure 7. Output Power versus Frequency
120
f, FREQUENCY (GHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
P
in
, INPUT POWER (WATTS)
20
1.91
0
15
1
120
20
20
2.01
60
1000
32
22
40
0
2
1.93
Figure 9. Wideband Gain and IRL
(at Small Signal)
16
f, FREQUENCY (GHz)
6
1.88
10
2.02
14
1.92
1.90
1.94
10
13
16
14
750 mA
500 mA
300 mA
I
DQ
= 1000 mA
26
1.95
3
4
5
6
60
50
40
10
0
h
V
DD
= 26 Vdc
f = 1990 MHz
11
12
28
20
24
80
, OUTPUT
POWER (W
A
TTS)
out
2 W
P
in
= 5 W
I
DQ
= 750 mA
f = 1990 MHz
P
, OUTPUT
POWER (W
A
TTS)
out
1.97
1.99
60
80
100
V
DD
= 26 Vdc
I
DQ
= 750 mA
1 W
2 W
40
60
80
P
, OUTPUT
POWER (W
A
TTS)
out
20
30
P
out
V
DD
= 26 Vdc
I
DQ
= 750 mA
f = 1990 MHz
12
G
ps
, POWER GAIN (dB)
0
-15
-25
-20
-5
-10
V
DD
= 26 Vdc
I
DQ
= 750 mA
G
ps
8
IRL, INPUT
RETURN LOSS (dB)
0.1
100
30
18
16
14
100
120
100
1.98
1.96
2.00
2.04
, DRAIN EFFICIENCY
(%)
6
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
V
DD
= 26 V, I
DQ
= 750 mA, P
out
= 90 Watts (CW)
Figure 10. Large Signal Source and Load Impedance
f = 1805 MHz
f = 1990 MHz
Z
o
= 10
f = 1805 MHz
f = 1990 MHz
f
MHz
Z
source
Z
load
1805
1880
1930
1.10 - j5.85
2.05 - j8.00
1.56 - j6.75
1.15 - j2.16
1.13 - j2.60
1.30 - j2.23
1990
2.30 - j7.30
0.82 - j2.90
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
MRF18090BR3 MRF18090BSR3
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE D
NI-880
MRF18090BR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.175
0.205
4.44
5.21
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
4
CASE 465C-02
ISSUE D
NI-880S
MRF18090BSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
8
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
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Document Number: MRF18090B
Rev. 7, 5/2006
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