MRF377HR3 MRF377HR5
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power -- 45 Watts Avg.
Power Gain 16.7 dB
Efficiency 21%
ACPR -58 dBc
Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power -- 80 Watts Avg.
Power Gain 16.5 dB
Efficiency 27.5%
IMD -31.3 dBc
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Input and Output Matched for Ease of Use
Integrated ESD Protection
Excellent Thermal Stability
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
(1)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Drain Current - Continuous
I
D
17
Adc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
648
3.7
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81C, 105 W CW
Case Temperature 77C, 45 W CW
R
JC
0.27
0.29
C/W
1. Each side of device measured separately.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF377H
Rev. 0, 1/2005
Freescale Semiconductor
Technical Data
470 - 860 MHz, 240 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
MRF377HR3
MRF377HR5
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10 A)
V
(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200 A)
V
GS(th)
--
2.8
--
Vdc
On Characteristics
(1)
Gate Quiescent Voltage
(V
DS
= 32 Vdc, I
D
= 225 mA)
V
GS(Q)
--
3.5
--
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 A)
V
DS(on)
--
0.27
--
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
--
3.2
--
pF
Functional Characteristics (In DVBT OFDM Single-Channel, Narrowband Fixture,
50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
G
ps
16.5
18.2
--
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
21
22.9
--
%
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
ACPR
--
-59.2
-57
dBc
Typical Characteristics (In DVBT OFDM Single-Channel, Broadband Fixture,
50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G
ps
--
--
--
--
--
17.6
17.6
17.4
17.4
16.8
--
--
--
--
--
dB
1. Each side of device measured separately.
2. Measured in push-pull configuration.
(continued)
MRF377HR3 MRF377HR5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
--
--
--
--
--
23.5
25.8
23.0
22.7
21.3
--
--
--
--
--
%
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
--
--
--
--
--
-59.3
-59.3
-58.7
-58.7
-58.1
--
--
--
--
--
dBc
Typical Characteristics (In ATSC 8VSB Single-Channel, Broadband Fixture,
50 ohm system)
(1)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G
ps
--
--
--
--
--
17.5
17.5
17.2
17.2
16.6
--
--
--
--
--
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
--
--
--
--
--
31.0
34.3
30.1
29.6
27.8
--
--
--
--
--
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
--
--
--
--
--
31.7
32.7
32.9
34.2
35.4
--
--
--
--
--
dBc
1. Measured in push-pull configuration.
4
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
Table 5. 845-875 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Surface Mount, 11 (0805)
2508051107Y0
Fair-Rite
Balun 1, Balun 2
0.8-1GHz Xinger Balun
3A412
Anaran
C1
33 pF Chip Capacitor (0805)
08055J330JBT
AVX / Kyocera
C2
2.7 pF Chip Capacitor (0603)
06035J2R7BBT
AVX / Kyocera
C3
12 pF Chip Capacitor (0805)
08051J120GBT
AVX / Kyocera
C4, C5
6.8 pF Chip Capacitors (0805)
08051J6R8BBT
AVX / Kyocera
C6
2.7 pF Chip Capacitor (0805)
0805J2R7BBT
AVX / Kyocera
C7, C8, C9, C10
3.3 pF Chip Capacitors (0805)
08051J3R3BBT
AVX / Kyocera
C11, C12
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC3810
Kemet
C13, C14, C15, C16
0.01 F, 100 V Chip Capacitors
C1825C103J1GAC
Kemet
C17, C18
0.56 F, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C19, C20
10 F, 50 V Tantalum Chip Capacitors
522Z050/100MTRE
Tecate
C21, C22, C23, C24
47 F, 16 V Tantalum Chip Capacitors
TPSD476K016R0150
AVX / Kyocera
C25, C26
470 F, 63 V Electrolytic Capacitors
NACZF471M63V (18x22)
Nippon
L1
12 nH Inductor (0603)
0603HC-12NXJB
CoilCraft
L2
7.15 nH Inductor
1606-7
CoilCraft
L3, L4
10 nH Inductor (0603)
0603HC-10NXJB
CoilCraft
R1, R2
24 , 1/8 W, 5% Chip Resistors (1206)
WB1, WB2, WB3, WB4
Brass Wear Shims
PCB
Arlon 30 mil,
r
= 2.56
DS1152
DS Electronics
C10
C9
R1
C2
L1
C21
C22
C14
Balun 1
C3
WB2
WB1
L3
V
GG
B1
B2
C11
C1
R2
L4
V
GG
C24
C23
C12
C13
C15
C26
C18
Balun 2
C4
C5
C6
WB4
WB3
C25
V
DD
C16
C20
C17
L2
C8
C7
Figure 1. 845-875 MHz Narrowband Test Circuit Component Layout
MRF377 Gate
MRF377 Drain
C19
V
DD
DS1152-A Rev 0
DS1152-B Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF377HR3 MRF377HR5
5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
2200 mA
100
16
19
10
G
ps
P
out
, OUTPUT POWER (WATTS) PEP
Figure 2. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18.5
18
17.5
17
16.5
100
-70
-20
10
I
DQ
= 1400 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
INTERMODULA
TION DIST
ORTION
(dBc)
IMD,
V
DD
= 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
-30
-40
-50
-60
1600 mA
1800 mA
2000 mA
100
-80
-20
10
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION DIST
ORTION
(dBc)
IMD,
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
-30
-40
-50
-60
-70
5th Order
3rd Order
100
5
45
10
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Drain Efficiency versus
Output Power
, DRAIN EFFICIENCY
(%)
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
35
30
25
20
15
10
100
12
19
10
-80
60
G
ps
IMD
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD,
, DRAIN EFFICIENCY
(%)
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18
40
17
20
16
0
15
-20
14
-40
13
-60
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