MRF5P20180HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Typical 2-carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2 x
800 mA, P
out
= 38
Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 14 dB
Drain Efficiency -- 26%
IM3 @ 10 MHz Offset -- -37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -41 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
530
3.0
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
120
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 120 W CW
Case Temperature 72C, 38 W CW
R
JC
0.33
0.35
C/W
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5P20180HR6
Rev. 0, 12/2004
Freescale Semiconductor
Technical Data
MRF5P20180HR6
1990 MHz, 38 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2004. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200 Adc)
V
GS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
V
GS(Q)
--
3.6
--
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
--
0.26
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.7
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
(2)
V
DD
= 28 Vdc, I
DQ
= 2 x 800 mA, P
out
= 38 W Avg.,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Peak/Avg. =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
12.5
14
--
dB
Drain Efficiency
D
23
26
--
%
Intermodulation Distortion
IM3
--
-37.5
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-41
-38
dBc
Input Return Loss
IRL
--
-16
-9
dB
1. Each side of device measured separately. Part is internally matched both on input and output.
2. Measurements made with device in push-pull configuration.
MRF5P20180HR6
3
RF Device Data
Freescale Semiconductor
Z11, Z12
0.341 x 0.945 Microstrip
Z13, Z14
0.035 x 0.913 Microstrip
Z15, Z16
0.581 x 0.823 Microstrip
Z17, Z18
0.059 x 1.057 Microstrip
Z19, Z20
0.081 x 0.046 Microstrip
Z21, Z22
0.081 x 0.126 Microstrip
Z25
0.081 x 0.793 Microstrip
PCB
Taconic TLX8-0300, 0.030,
r
= 2.55
Figure 1. MRF5P20180HR6 Test Circuit Schematic
Z1
0.081 x 1.126 Microstrip
Z2
0.079 x 0.138 Microstrip
Z3
0.081 x 0.091 Microstrip
Z4
0.081 x 0.117 Microstrip
Z5, Z24
0.134 x 0.874 Microstrip
Z6, Z23
0.081 x 2.269 Microstrip
Z7, Z8
0.081 x 0.118 Microstrip
Z9, Z10
0.081 x 0.079 Microstrip
R1
R2
+
C14
C10
C8
Z13
Z1
Z3
RF
INPUT
C2
Z7
Z9
C3
Z8
Z10
Z12
Z14
Z17
Z18
C6
C12
C17
+
C20
+
C16
V
SUPPLY
C7
C13
C19
+
C21
+
C18
V
SUPPLY
C4
Z15
Z19
Z21
C5
Z16
Z20
Z22
Z24
Z25
RF
OUTPUT
DUT
V
BIAS
Z23
Z11
Z4
Z5
Z6
C1
Z2
R3
R4
+
C15
C11
V
BIAS
C9
+
+
Table 5. MRF5P20180HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF 100B Chip Capacitor
100B1R8BW
ATC
C2, C3, C4, C5, C6, C7
10 pF 100B Chip Capacitors
100B100GW
ATC
C8, C9
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C10, C11, C12, C13
10 nF 200B Chip Capacitors
200B103MW
ATC
C14, C15, C16, C17, C18, C19
22 F, 35 V Tantalum Capacitors
TAJE226M035
AVX
C20, C21
220 F, 63 V Electrolytic Capacitors
13668221
Philips
R1, R2, R3, R4
10 kW Chip Resistors (1206)
4
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
Figure 2. MRF5P20180HR6 Test Circuit Component Layout
MRF5P20180
Rev 1
CUT
OUT
AREA
C14
R1
R2
V
GG
V
DD
C10
C8
C6
C16
C4
C17
C20
C12
C5
C3
C2
STRAP
C1
C9
R3
C15
R4
C11
C19
C18
C7
C13
C21
V
GG
V
DD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5P20180HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
D
2080
5
15
1840
-45
40
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
G
ps
, POWER GAIN (dB)
-35
-10
-15
-20
-25
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR
(dBc)
-30
IM3
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
14
35
13
30
12
25
11
20
10
-20
9
-25
8
-30
7
-35
6
-40
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060
V
DD
= 28 Vdc, P
out
= 38 W (Avg.), I
DQ
= 1600 mA
1000
11
16
1
I
DQ
= 2400 mA
800 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
100
15.5
15
14.5
14
13.5
13
12.5
12
11.5
2000 mA
1200 mA
1600 mA
1000
-60
-20
1
I
DQ
= 800 mA
2400 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
V
DD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
1600 mA
1200 mA
2000 mA
10
100
-25
-30
-35
-40
-45
-50
-55
100
-60
-20
0.1
7th Order
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
V
DD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
5th Order
3rd Order
INTERMODULA
TION DIST
ORTION
(dBc)
IMD,
-25
-30
-35
-40
-45
-50
-55
1
10
46
44
58
30
P1dB = 53.5 dBm (224 W)
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
,
OUTPUT
POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 5
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
44
42
40
38
36
34
32
57
56
55
54
53
52
51
50
49
48
47
46
45
P3dB = 54 dBm (251 W)
Actual
Ideal
D
, DRAIN
EFFICIENCY (%)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
6
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
TYPICAL CHARACTERISTICS
100
0
35
1
-55
-20
30
-25
25
-30
20
-35
15
-40
10
-45
5
-50
10
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS, Avg.) W-CDMA
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc),
ACPR
(dBc)
V
DD
= 28 Vdc, I
DQ
= 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
2 x W-CDMA
10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
D
T
J
, JUNCTION TEMPERATURE (
C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
220
100
120
140
160
180
200
10
7
10
10
10
9
10
8
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
2
4
6
8
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-110
-120
-70
-20
-80
-60
-50
(dB)
-90
-100
-40
-30
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
5
15
10
0
-5
-10
-15
-20
-25
25
W-CDMA TEST SIGNAL
MTTF
F
ACT
OR (HOURS x AMPS
2
)
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
MRF5P20180HR6
7
RF Device Data
Freescale Semiconductor
Z
o
= 25
Z
load
f = 1990 MHz
f = 1930 MHz
Z
source
f = 1990 MHz
f = 1930 MHz
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
1930
1960
1990
6.54 - j16.04
13.88 - j20.46
9.70 - j17.92
4.06 - j5.56
3.70 - j5.48
3.64 - j5.76
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
V
DD
= 28 V, I
DQ
= 2 x 800 mA, P
out
= 38 W Avg.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-
+
+
8
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
NOTES
MRF5P20180HR6
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
NOTES
MRF5P20180HR6
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 375D-05
ISSUE D
NI-1230
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.615
1.625
41.02
41.28
B
0.395
0.405
10.03
10.29
C
0.150
0.200
3.81
5.08
D
0.455
0.465
11.56
11.81
E
0.062
0.066
1.57
1.68
F
0.004
0.007
0.10
0.18
G
1.400 BSC
35.56 BSC
H
0.082
0.090
2.08
2.29
K
0.117
0.137
2.97
3.48
L
0.540 BSC
13.72 BSC
N
1.218
1.242
30.94
31.55
Q
0.120
0.130
3.05
3.30
R
0.355
0.365
9.01
9.27
A
G
L
D
K
4X
Q
2X
1
2
4
3
M
1.219
1.241
30.96
31.52
S
0.365
0.375
9.27
9.53
aaa
0.013 REF
0.33 REF
bbb
0.010 REF
0.25 REF
ccc
0.020 REF
0.51 REF
SEATING
PLANE
N
C
E
M
M
A
M
aaa
B
M
T
B
B
(FLANGE)
H
F
M
A
M
ccc
B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
bbb
B
M
T
4X
A
T
M
A
M
bbb
B
M
T
(INSULATOR)
M
A
M
ccc
B
M
T
(LID)
PIN 5
M
A
M
bbb
B
M
T
4
12
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
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MRF5P20180HR6
Rev. 0, 12/2004
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