MRF5S19130HR3 MRF5S19130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2-Carrier N-CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1200 mA, P
out
= 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 13 dB
Drain Efficiency -- 25%
IM3 @ 2.5 MHz Offset -- - 37 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset -- - 51 dB
@ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate - Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
438
2.50
W
W/
C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
110
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
C, 115 W CW
Case Temperature 78
C, 26 W CW
R
JC
0.40
0.46
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5S19130H
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF5S19130HR3
MRF5S19130HSR3
1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
Adc)
V
GS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
V
GS(Q)
--
3.8
--
Vdc
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
--
0.26
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
7.5
--
S
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.7
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 26 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. Peak/Avg. = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain
G
ps
12
13
--
dB
Drain Efficiency
D
23
25
--
%
Intermodulation Distortion
IM3
--
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
--
- 51
- 48
dBc
Input Return Loss
IRL
--
- 15
- 9
dB
1. Part is internally matched both on input and output.
MRF5S19130HR3 MRF5S19130HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic
Z13, Z14
1.125
x 0.068 Microstrip
Z15
0.071
x 1.080 Microstrip
Z16
0.060
x 1.080 Microstrip
Z17
0.290
x 1.080 Microstrip
Z18
1.075
x 0.825 x 0.125 Taper
Z19
0.635
x 0.120 Microstrip
Z20
0.185
x 0.096 Microstrip
Z21
0.414
x 0.084 Microstrip
Z22
0.040
x 0.084 Microstrip
Z23
0.199
x 0.057 Microstrip
PCB
Arlon GX0300 - 55 - 22, 0.03
,
r
= 2.55
Z1
0.200
x 0.085 Microstrip
Z2
0.170
x 0.085 Microstrip
Z3
0.480
x 0.085 Microstrip
Z4
0.926
x 0.085 Microstrip
Z5
0.590
x 0.085 Microstrip
Z6
0.519
x 0.955 x 0.160 Taper
Z7
0.022
x 0.955 Microstrip
Z8
0.046
x 0.955 Microstrip
Z9
0.080
x 0.955 Microstrip
Z10, Z11
1.280
x 0.046 Microstrip
Z12
0.053
x 1.080 Microstrip
C9
R2
V
BIAS
V
SUPPLY
C24
C19
C17
C4
C8
C15
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z4 Z5 Z6
Z10
Z13
Z16 Z17
+
DUT
C10
C23
C21
B1
R3
C25
Z12
Z22
C6
C7
Z9
C2
Z3
C3
Z11
C11
B2
R4
C12
C14
C13
C16
C18
C20
C22
C30
C29
C32
C31
C27
C28
C33
C34
C26
Z14
+
+
+
+
+
+
+
C5
Z7
Z8
Z15
Z23 Z24
Z18 Z19 Z20 Z21
+
+
+
+
Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Bead
95F786
Newark
C1
0.8 pF Chip Capacitor
100B0R8BP 500X
ATC
C2, C4
0.6 4.5 pF Gigatrim Variable Capacitors
44F3358
Newark
C3
2.2 pF Chip Capacitor
100B2R2BP 500X
ATC
C5
1.7 pF Chip Capacitor
100B1R7BP 500X
ATC
C8, C13
9.1 pF Chip Capacitors
100B9R1CP 500X
ATC
C9, C11
1
F, 25 V Tantalum Capacitors
92F1845
Newark
C10
47
F, 50 V Electrolytic Capacitor
51F2913
Newark
C6, C14, C17, C18, C19, C28, C29, C30
0.1
F Chip Capacitors
CDR33BX104AKWS
Kemet
C7, C12, C16, C27
1000 pF Chip Capacitors
100B102JP 500X
ATC
C15, C26
8.2 pF Chip Capacitors
100B8R2CP 500X
ATC
C20, C21, C22, C23, C31, C32, C33, C34
22
F, 35 V Tantalum Capacitors
92F1853
Newark
C24
470
F, 63 V Electrolytic Capacitor
95F4579
Newark
C25
6.2 pF Chip Capacitor
100B6R2CP 500X
ATC
R1
1 k
W Chip Resistor
D5534M07B1K00R
Newark
R2
560 k
W Chip Resistor
CR1206 564JT
Newark
R3, R4
12
W Chip Resistors
RM73B2B120JT
Garrett Electtonics
4
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout
MRF5S19130
Rev 5
CUT
OUT
AREA
V
GG
V
DD
C24
C21
C20
C19
C18
C15
C23
C22
C17
C16
C25
C32
C31
C30
C29
C34
C33
C28
C27
C26
C14
C12
C11
C6
C7
C10
B2
R4
C13
C1
C2
C3
C4
C5
C9
R2
R1
B1
R3
C8
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5S19130HR3 MRF5S19130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
D
2000
5
15
1900
-60
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
-30
-5
-10
-15
-20
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR (dBc)
-25
1990
1980
1970
1960
1950
1940
1930
1920
1910
14
35
13
30
12
25
11
20
10
-10
9
-20
8
-30
7
-40
6
-50
200
10
16
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
I
DQ
= 1800 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
1500 mA
1200 mA
600 mA
900 mA
15
14
13
12
11
10
100
200
-60
-25
1
I
DQ
= 1800 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
10
100
-30
-40
-45
-50
-55
-35
1500 mA
1200 mA
600 mA
900 mA
10
-60
-20
0.1
3rd Order
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION DIST
O
R
T
ION (dBc)
IMD,
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
1
-25
-30
-35
-40
-45
-50
-55
5th Order
7th Order
45
48
60
35
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT
POWER (dBm)
36
37
38
39
40
41
42
43
44
59
58
57
56
55
54
53
52
51
50
49
P3dB = 53.11 dBm (205.57 W)
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8
sec (on), 1 msec (off)
Center Frequency = 1960 MHz
P1dB = 52.54 dBm (179.61 W)
Actual
Ideal
INTERMODULA
TION DIST
OR
TION (dBc)
IMD, THIRD ORDER
D
, DRAIN
EFFICIENCY (%)
6
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
TYPICAL CHARACTERISTICS
D
0
35
1
-65
-30
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG. (N-CDMA)
Figure 8. 2 - Carrier N - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
V
DD
= 28 Vdc, I
DQ
= 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N-CDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc),
ACPR (dBc)
10
30
-35
25
-40
20
-45
15
-50
10
-55
5
-60
-100
0
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
(dB)
-10
-20
-30
-40
-50
-60
-70
-80
-90
-ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
-IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
-1.5
-3
-4.5
-6
-7.5
7.5
220
10
5
10
9
100
Figure 10. MTTF Factor versus Junction
Temperature
10
8
10
7
10
6
120
140
160
180
200
MTTF F
ACT
OR (HOURS X AMPS
2
)
T
J
, JUNCTION TEMPERATURE (
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
MRF5S19130HR3 MRF5S19130HSR3
7
RF Device Data
Freescale Semiconductor
Figure 11. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
1930
1960
1990
2.57 - j9.1
3.86 - j9.2
2.35 - j7.6
1.48 - j1.8
1.28 - j1.5
1.42 - j1.3
V
DD
= 28 V, I
DQ
= 1.2 A, P
out
= 26 W (2-Carrier N-CDMA)
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
o
= 10
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
Z
load
Z
source
8
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
NOTES
MRF5S19130HR3 MRF5S19130HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
NOTES
MRF5S19130HR3 MRF5S19130HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B - 03
ISSUE B
NI - 880
MRF5S19130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
CASE 465C - 02
ISSUE A
NI - 880S
MRF5S19130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
12
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
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