MRF5S21090HR3 MRF5S21090HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2-carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
850 mA, P
out
= 19 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 14.5 dB
Drain Efficiency -- 26%
IM3 @ 10 MHz Offset -- - 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- - 40.5 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate - Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
269
1.5
W
W/
C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
C, 90 W CW
Case Temperature 76
C, 19 W CW
R
JC
0.65
0.69
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5S21090H
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF5S21090HR3
MRF5S21090HSR3
2170 MHz, 19 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21090HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21090HSR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
Adc)
V
GS(th)
2.5
2.9
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
V
GS(Q)
--
3.9
--
Vdc
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
--
0.25
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.7
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 19 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF
Power Gain
G
ps
12.5
14.5
--
dB
Drain Efficiency
D
24
26
--
%
Intermodulation Distortion
IM3
--
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
--
- 40.5
- 38
dBc
Input Return Loss
IRL
--
- 15
- 9
dB
1. Part is internally matched both on input and output.
MRF5S21090HR3 MRF5S21090HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic
Z12
0.609
x 0.220 Microstrip
Z13
0.290
x 0.106 Microstrip
Z14
0.290
x 0.106 Microstrip
Z15
0.080
x 0.025 Microstrip
Z16
1.080
x 0.160 Microstrip
Z17
0.180
x 0.080 Microstrip
Z18
0.260
x 0.147 Microstrip
Z19
0.500
x 0.080 Microstrip
Z20
0.199
x 0.147 Microstrip
Z21
0.365
x 0.080 Microstrip
PCB
Arlon GX0300 - 55 - 22, 0.03
,
r
= 2.55
Z1
1.0856
x 0.080 Microstrip
Z2
0.130
x 0.080 Microstrip
Z3
0.230
x 0.080 Microstrip
Z4
0.347
x 0.208 Microstrip
Z5
0.090
x 0.208 Microstrip
Z6
0.650
x 0.176 Taper
Z7
0.623
x 0.610 Microstrip
Z8
0.044
x 0.881 Microstrip
Z9
0.044
x 0.869 Microstrip
Z10
1.076
x 0.446 Microstrip
Z11
0.320
x 0.393 Microstrip
C4
R2
V
BIAS
V
SUPPLY
C13
C8
C7
C14
C15
C9
C5
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z6
Z7
Z8
Z9
Z11 Z12
Z16
Z17
Z19
Z21
+
DUT
R3
C3
C6
Z4
Z5
C12
C11
W1
R4
C2
Z10
Z13
Z14
Z18
Z20
Z15
Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
9.1 pF Chip Capacitor
100B9R1CP 500X
ATC
C2
8.2 pF Chip Capacitor
100B8R2CP 500X
ATC
C3
2.0 pF Chip Capacitor
100B2R0BP 500X
ATC
C4, C12
0.1
F Chip Capacitors
CDR33BX104AKWS
Kemet
C5
5.6 pF Chip Capacitor
100B5R6CP 500X
ATC
C6
5.1 pF Chip Capacitor
100B5R1CP 500X
ATC
C7
7.5 pF Chip Capacitor
100B7R5JP 500X
ATC
C8
1.2 pF Chip Capacitor
100B1R2BP 500X
ATC
C9, C10
0.56
F Chip Capacitors
700A561MP 150X
ATC
C11
1000 pF Chip Capacitor
100B102JP 500X
ATC
C13
470
F, 35 V Electrolytic Capacitor
95F4579
Newark
C14, C15
0.4 2.5 Variable Capacitors, Gigatrim
44F3367
Newark
R1
1 k
W Chip Resistor
D5534M07B1K00R
Newark
R2
560 k
W Chip Resistor
CR1206 564JT
Newark
R3, R4
12
W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
Wire Strap
4
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout
C1
R1
R2
C2
C3
C4
C5
C6
C7 C8
C9
C10
C11
C12
C13
C14
C15
MRF5S21090
Rev 5
R3
V
GG
V
DD
R4
W1
CUT
OUT
AREA
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5S21090HR3 MRF5S21090HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
42
45
57
30
55
53
51
49
47
32
34
36
38
40
Figure 3. 2 - Carrier W - CDMA Broadband Performance
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
100
12
17
1
1000 mA
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
450 mA
850 mA
650 mA
15
14
13
10
16
-45
-15
1
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) PEP
850 mA
1200 mA
650 mA
1000 mA
10
-20
-25
-30
-35
-40
100
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
-50
10
-60
-20
0.1
7th Order
TWO-TONE SPACING (MHz)
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
-30
-35
-40
-45
-50
-55
1
-25
P3dB = 51.17 dBm (130.9 W)
P
in
, INPUT POWER (dBm)
P
out
, OUTPUT
POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 50.47 dBm (111.4 W)
D
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
IM3 (dBc),
ACPR (dBc)
G
ps
, POWER GAIN (dB)
-30
-10
-15
-20
-25
INPUT
RETURN LOSS (dB)
IRL,
2200
2180
2160
2140
2120
2100
2080
5
13
12
11
10
9
8
7
6
-45
30
25
20
-20
-25
-30
-35
-40
40
35
15
14
-35
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 850 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
I
DQ
= 1200 mA
D
, DRAIN
EFFICIENCY (%)
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,THIRD ORDER
6
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
TYPICAL CHARACTERISTICS
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
-55
P
out
, POWER (WATTS) W-CDMA
IM3 (dBc),
ACPR (dBc)
30
-25
25
-30
20
-35
15
-40
5
-50
1
10
D
G
ps
ACPR
IM3
-45
10
V
DD
= 28 Vdc, I
DQ
= 850 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
-15
-20
40
35
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
220
10
9
100
T
J
, JUNCTION TEMPERATURE (
C)
Figure 9. MTTF Factor versus Junction Temperature
10
8
10
7
10
6
120
140
160
180
200
10
.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-110
-120
-70
-20
-80
-60
-50
(dB)
-90
-100
-40
-30
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
5
15
10
0
-5
-10
-15
-20
-25
25
MTTF
F
ACT
OR (HOURS x AMPS
2
)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
W - CDMA TEST SIGNAL
MRF5S21090HR3 MRF5S21090HSR3
7
RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2100
2120
2160
2.4 - j2.0
2.1 - j1.9
2.2 - j2.1
3.4 - j5.1
3.2 - j5.4
3.0 - j4.4
V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 19 W Avg.
Z
o
= 10
Z
load
f = 2100 MHz
f = 2200 MHz
Z
source
f = 2100 MHz
f = 2200 MHz
2200
1.8 - j1.6
3.0 - j4.0
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
NOTES
MRF5S21090HR3 MRF5S21090HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
NOTES
MRF5S21090HR3 MRF5S21090HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465 - 06
ISSUE F
NI - 780
MRF5S21090HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S21090HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
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MRF5S21090H
Rev. 1, 12/2004
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