MRF5S21100HR3 MRF5S21100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2-carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1050 mA,
P
out
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 13.5 dB
Drain Efficiency -- 26%
IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- - 40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate - Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
273
1.56
W
W/
C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
C, 100 W CW
Case Temperature 78
C, 23 W CW
R
JC
0.57
0.64
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5S21100H
Rev. 2, 1/2005
Freescale Semiconductor
Technical Data
MRF5S21100HR3
MRF5S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21100HSR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
0.5
Adc
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
Adc)
V
GS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1050 mAdc)
V
GS(Q)
--
3.8
--
Vdc
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.5 Adc)
V
DS(on)
--
0.24
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.5 Adc)
g
fs
--
6
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.14
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
12.5
13.5
--
dB
Drain Efficiency
D
24
26
--
%
Intermodulation Distortion
IM3
--
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
--
- 40
- 38
dBc
Input Return Loss
IRL
--
- 16
- 9
dB
1. Part is internally matched both on input and output.
MRF5S21100HR3 MRF5S21100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
R2
V
BIAS
V
SUPPLY
C11
C8
C7
C5
C14
C3
C10
C1
RF
OUTPUT
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
Z8
Z16
Z10 Z11
Z12
Z15
Z17
+
Z10
0.368
x 1.136 Microstrip
Z11
0.151
x 0.393 Microstrip
Z12
0.280
x 0.220 Microstrip
Z13
0.481
x 0.142 Microstrip
Z14
0.138
x 0.080 Microstrip
Z15
0.344
x 0.080 Microstrip
Z16
0.147
x 0.099 Microstrip
Z17
0.859
x 0.080 Microstrip
PCB
Arlon GX - 0300 - SS - 22, 0.030
,
r
= 2.55
Z1
0.674
x 0.080 Microstrip
Z2
0.421
x 0.080 Microstrip
Z3
0.140
x 0.080 Microstrip
Z4
1.031
x 0.080 Microstrip
Z5
0.380
x 0.643 Microstrip
Z6
0.080
x 0.643 Microstrip
Z7
0.927
x 0.048 Microstrip
Z8
0.620
x 0.048 Microstrip
Z9
0.079
x 1.136 Microstrip
DUT
B1
R3
C4
C13
C15
Z13 Z14
C2
C6
W1
R4
C12
+
C9
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
95F786
Newark
C1, C2
8.2 pF Chip Capacitors
100B8R2CP500X
ATC
C3
5.6 pF Chip Capacitor
100B5R6CP500X
ATC
C4
0.1
F Chip Capacitor
C1210C104J5RAC
Kemet
C5, C7
7.5 pF Chip Capacitors
100B7R5JP500X
ATC
C6
1.2 pF Chip Capacitor
100B1R2BP500X
ATC
C8
1K pF Chip Capacitor
100B102JP500X
ATC
C9, C10
0.56
F Chip Capacitors
C1825C564J5RAC
Kemet
C11
470
F, 63 V Electrolytic Capacitor
95F4579
Newark
C12
100
F, 50 V Electrolytic Capacitor
51F2913
Newark
C13
0.6 - 4.5 pF Gigatrim Variable Capacitor
44F3358
Newark
C14
2.7 pF Chip Capacitor
100B2R7CP500X
ATC
C15
0.4 - 2.5 pF Gigatrim Variable Capacitor
44F3367
Newark
R1
1 k
W Chip Resistor
D5534M07B1K00R
Newark
R2
560 k
W Chip Resistor
CR1206564JT
Newark
R3, R4
12
W Chip Resistors
RM73B2B120JT
Garrett Electronics
4
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
B1
R2
C4
C12
C9
C3
C10
C5
C11
C6
C7 C8
W1
R4
C15
C14
C13
C1
R3
R1
C2
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
CUT
OUT
AREA
VGG
VDD
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5S21100HR3 MRF5S21100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
42
48
56
34
P3dB = 51.88 dBm (154.17 W)
V
DD
= 28 Vdc, I
DQ
= 1050 mA
Pulsed CW, 8
sec(on), 1msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 51.18 dBm (131.22 W)
55
53
52
50
49
36
37
38
41
40
54
51
35
39
5
15
2040
-45
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, P
out
= 23 W (Avg.), I
DQ
= 1050 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc),
ACPR (dBc)
-50
-10
-20
-30
-40
INPUT
RETURN LOSS (dB)
IRL,
0
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
14
35
13
30
12
25
11
20
10
-20
9
-25
8
-30
7
-35
6
-40
100
11
16
1
I
DQ
= 1400 mA
650 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
1050 mA
850 mA
1250 mA
15
14
13
12
10
100
-55
-15
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD
ORDER
INTERMODULA
TION DIST
O
R
T
ION (dBc)
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
I
DQ
= 1400 mA
650 mA
1050 mA
850 mA
1250 mA
-20
-25
-30
-35
-40
-45
-50
10
10
-60
-20
1
7th Order
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1050 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
0.1
-25
-30
-35
-40
-45
-50
-55
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
, OUTPUT
POWER (dBm)
D
D
, DRAIN
EFFICIENCY (%)
6
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
TYPICAL CHARACTERISTICS
0
40
1
-55
-15
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG. W-CDMA
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc),
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x W-CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
35
-20
30
-25
25
-30
20
-35
15
-40
10
-45
5
-50
10
D
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
220
10
9
100
10
8
10
7
10
6
120
140
160
180
200
T
J
, JUNCTION TEMPERATURE (
_C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
MTTF
F
ACT
OR (HOURS x AMPS
2
)
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY
(%)
10
1
0.1
0.01
0.001
2
4
6
8
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-110
-120
-70
-20
-80
-60
-50
(dB)
-90
-100
-40
-30
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
5
15
10
0
-5
-10
-15
-20
-25
25
MRF5S21100HR3 MRF5S21100HSR3
7
RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2100
2120
2160
1.2 - j2.1
2.2 - j3.0
1.4 - j2.3
3.4 - j7.2
3.4 - j6.5
4.9 - j7.0
V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg.
Z
o
= 10
Z
load
f = 2100 MHz
f = 2200 MHz
Z
source
f = 2100 MHz
f = 2200 MHz
2200
1.7 - j2.1
3.4 - j8.6
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
NOTES
MRF5S21100HR3 MRF5S21100HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
NOTES
MRF5S21100HR3 MRF5S21100HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465 - 06
ISSUE F
NI - 780
MRF5S21100HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S21100HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
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MRF5S21100H
Rev. 2, 1/2005
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