MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications at frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
· Typical 2-carrier W-CDMA Performance: V

= 28 Volts, I

= 1200 mA,

out

= 28 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain -- 13.5 dB

Efficiency -- 26%

IM3 @ 10 MHz Offset -- -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset -- -39 dBc @ 3.84 MHz Channel Bandwidth

· Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW

Output Power

· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched, Controlled Q, for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· Lower Thermal Resistance Package
· Low Gold Plating Thickness on Leads, 40

Nominal.

· In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

372

2.13

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

CW Operation

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 92 W CW

Case Temperature 76°C, 28 W CW

0.44
0.47

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF5S21130H

Rev. 2, 1/2005

Freescale Semiconductor

Technical Data

MRF5S21130HR3

MRF5S21130HSR3

2170 MHz, 28 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465C-02, STYLE 1

NI-880S

MRF5S21130HSR3

CASE 465B-03, STYLE 1

NI-880

MRF5S21130HR3

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M4 (Minimum)

Charge Device Model

C7 (Minimum)

Table 4. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 300 µAdc)

GS(th)

2.5

2.7

3.5

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 1200 mAdc)

GS(Q)

3.7

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 3 Adc)

DS(on)

0.26

0.3

Vdc

Forward Transconductance

= 10 Vdc, I

= 3 Adc)

7.5

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

2.6

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 1200 mA, P

out

= 28 W Avg., f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @

0.01% Probability on CCDF.

Power Gain

13.5

Drain Efficiency

Intermodulation Distortion

IM3

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

-39

-37

dBc

Input Return Loss

IRL

-12

-9

1. Part is internally matched both on input and output.

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

BIAS

INPUT

C15

C20

C11

C13

SUPPLY

OUTPUT

DUT

C10

Z10

Z11

Z16

Z15

Z14

Z13

Z12

C17

C18

C19

C16

C12

C14

Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic

Z9, Z10

0.709 x 0.083 Microstrip

Z11

0.415 x 1.000 Microstrip

Z12

0.531 x 0.083 Microstrip

Z13

0.994 x 0.083 Microstrip

Z14, Z15

0.070 x 0.220 Microstrip

Z16

0.430 x 0.083 Microstrip

PCB

Taconic TLX8, 0.030,

= 2.55

0.500 x 0.083 Microstrip

0.995 x 0.083 Microstrip

0.905 x 0.083 Microstrip

0.159 x 1.024 Microstrip

0.117 x 1.024 Microstrip

Z6, Z7

0.749 x 0.083 Microstrip

0.117 x 1.000 Microstrip

Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

C1, C2, C13, C14, C15, C16

10 µF, 35 V Tantalum Capacitors

293D1106X9035D

Vishay -Sprague

C3, C4, C11, C12

220 nF Chip Capacitors (1812)

1812Y224KXA

Vishay -Vitramon

C5, C6, C7, C9, C10, C18, C19

6.8 pF 100B Chip Capacitors

100B6R8CW

ATC

0.1 pF 100B Chip Capacitor

100B0R1BW

ATC

C17

0.5 pF 100B Chip Capacitor

100B0R5BW

ATC

C20

220 µF, 63 V Electrolytic Capacitor, Radial

13668221

Philips

R1, R2

1 kW, 1/4 W Chip Resistors

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

2220

2060

IRL

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2-Carrier W-CDMA Broadband Performance

IM3 (dBc),

ACPR

(dBc)

, POWER GAIN (dB)

-30

-10

-15

-20

-25

INPUT

RETURN LOSS (dB)

IRL,

= 28 Vdc, P

out

= 28 W (Avg.), I

= 1200 mA

2-Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)

2200

2180

2160

2140

2120

2100

2080

-44

-28

-32

-36

-40

1000

= 1600 mA

1400 mA

out

, OUTPUT POWER (WATTS) PEP

Figure 4. Two-Tone Power Gain versus

Output Power

, POWER GAIN (dB)

= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing

800 mA

1200 mA

1000 mA

100

14.5

13.5

12.5

11.5

1000

-65

-25

out

, OUTPUT POWER (WATTS) PEP

Figure 5. Third Order Intermodulation Distortion

versus Output Power

IMD, THIRD

ORDER

INTERMODULA

TION DIST

ORTION

(dBc)

100

-30

-35

-40

-45

-50

-55

-60

1000 mA

800 mA

= 1600 mA

1200 mA

1400 mA

= 28 Vdc

f1 = 2135 MHz,
f2 = 2145 MHz
Two-Tone Measurement,
10 MHz Tone Spacing

100

-60

-25

0.1

TWO-TONE SPACING (MHz)

Figure 6. Intermodulation Distortion Products

versus Tone Spacing

INTERMODULA

TION DIST

ORTION

(dBc)

IMD,

-30

-35

-40

-45

-50

-55

Ideal

P1dB = 51.88 dBm (154.17 W)

Actual

, INPUT POWER (dBm)

Figure 7. Pulse CW Output Power versus

Input Power

P out

OUTPUT

POWER (dBm)

= 28 Vdc, I

= 1200 mA

Pulsed CW, 5

µsec(on), 1 msec(off)

Center Frequency = 2140 MHz

P3dB = 52.58 dBm (181.1 W)

= 28 Vdc, P

out

= 130 W (PEP), I

= 1200 mA

Two-Tone Measurements, Center Frequency = 2140 MHz

3rd Order

5th Order

7th Order

, DRAIN

EFFICIENCY (%)

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3

TYPICAL CHARACTERISTICS

-55

-20

ACPR

out

, OUTPUT POWER (WATTS) AVG. (W-CDMA)

Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power

IM3 (dBc),

ACPR

(dBc)

-25

-30

-35

-40

-45

-50

IM3

= 28 Vdc, I

= 1200 mA, f1 = 2135 MHz,

f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)

TYPICAL CHARACTERISTICS

W-CDMA TEST SIGNAL

,
, DRAIN EFFICIENCY

(%),

, POWER GAIN (dB)

220

100

, JUNCTION TEMPERATURE (

°C)

Figure 9. MTTF Factor versus Junction Temperature

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

120

140

160

180

200

MTTF

F
ACT

(HOURS

AMPS )

0.0001

100

PEAK-TO-AVERAGE (dB)

Figure 10. CCDF W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single Carrier Test Signal

PROBABILITY

(%)

0.1

0.01

0.001

-5

-10

-15

-20

-25

Figure 11. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

-110

-120

-70

-20

-80

-60

-50

(dB)

-90

-100

-40

-30

3.84 MHz
Channel BW

-IM3 @
3.84 MHz BW

+IM3 @
3.84 MHz BW

-ACPR @
3.84 MHz BW

+ACPR @
3.84 MHz BW

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

CASE 465B-03

ISSUE B

NI-880

MRF5S21130HR3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M-1994.

2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

4. DELETED

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

1.335

1.345

33.91

34.16

0.535

0.545

13.6

13.8

0.147

0.200

3.73

5.08

0.495

0.505

12.57

12.83

0.035

0.045

0.89

1.14

0.003

0.006

0.08

0.15

1.100 BSC

27.94 BSC

0.057

0.067

1.45

1.70

0.170

0.210

4.32

5.33

0.871

0.889

19.30

22.60

.118

.138

3.00

3.51

0.515

0.525

13.10

13.30

STYLE 1:

PIN 1. DRAIN

2. GATE
3. SOURCE

bbb

(FLANGE)

SEATING

PLANE

ccc

bbb

(FLANGE)

(LID)

(INSULATOR)

aaa

(INSULATOR)

ccc

(LID)

0.515

0.525

13.10

13.30

0.872

0.888

22.15

22.55

aaa

0.007 REF

0.178 REF

bbb

0.010 REF

0.254 REF

ccc

0.015 REF

0.381 REF

CASE 465C-02

ISSUE A

NI-880S

MRF5S21130HSR3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M-1994.

2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.905

0.915

22.99

23.24

0.535

0.545

13.60

13.80

0.147

0.200

3.73

5.08

0.495

0.505

12.57

12.83

0.035

0.045

0.89

1.14

0.003

0.006

0.08

0.15

0.057

0.067

1.45

1.70

0.170

0.210

4.32

5.33

0.871

0.889

19.30

22.60

0.515

0.525

13.10

13.30

STYLE 1:

PIN 1. DRAIN

2. GATE
3. SOURCE

SEATING

PLANE

bbb

(FLANGE)

ccc

bbb

(FLANGE)

(LID)

(INSULATOR)

ccc

aaa

(LID)

(INSULATOR)

0.515

0.525

13.10

13.30

0.872

0.888

22.15

22.55

bbb

0.010 REF

0.254 REF

ccc

0.015 REF

0.381 REF

aaa

0.007 REF

0.178 REF

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3

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MRF5S21130H

Rev. 2, 1/2005

Document Number:

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S21130HSR3

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S21130HSR3