MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
· Typical Single-Carrier N-CDMA Performance @ 880 MHz, V

= 26 Volts,

= 950 mA, P

out

= 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain -- 19.5 dB

Drain Efficiency -- 28%

ACPR @ 750 kHz Offset -- -46.8 dBc @ 30 kHz Bandwidth

· Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW

Output Power

· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· N Suffix Indicates Lead-Free Terminations
· 200°C Capable Plastic Package
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

- 0.5, +68

Vdc

Gate-Source Voltage

- 0.5, + 15

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

336

1.92

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 20 W CW

0.52

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF5S9100

Rev. 3, 7/2005

Freescale Semiconductor

Technical Data

880 MHz, 20 W AVG., 26 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

MRF5S9100NR1

MRF5S9100NBR1

MRF5S9100MR1

MRF5S9100MBR1

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S9100NR1(MR1)

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S9100NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 400 µA)

GS(th)

2.8

3.5

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 950 mAdc)

GS(Q)

3.7

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2.0 Adc)

DS(on)

0.21

0.3

Vdc

Forward Transconductance

= 10 Vdc, I

= 6 Adc)

Dynamic Characteristics

(1)

Output Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

2.2

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 26 Vdc, I

= 950 mA, P

out

= 20 W Avg. N-CDMA, f = 880 MHz,

Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

@ 0.01% Probability on CCDF

Power Gain

19.5

Drain Efficiency

Adjacent Channel Power Ratio

ACPR

-46.8

-45

dBc

Input Return Loss

IRL

-19

-9

1. Part is internally input matched.

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

RF Device Data

Freescale Semiconductor

Z1, Z15

0.200 x 0.080 Microstrip

0.105 x 0.080 Microstrip

0.954 x 0.080 Microstrip

0.115 x 0.220 Microstrip

0.375 x 0.220 Microstrip

Z6, Z11

0.200 x 0.220 x 0.620 Taper

0.152 x 0.620 Microstrip

0.163 x 0.620 Microstrip

0.238 x 0.620 Microstrip

Z10

0.077 x 0.620 Microstrip

Z12

0.381 x 0.220 Microstrip

Z13

0.114 x 0.220 Microstrip

Z14

1.052 x 0.080 Microstrip

PCB

Arlon GX0300, 0.030,

= 2.55

Figure 1. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Schematic

INPUT

OUTPUT

SUPPLY

Z15

BIAS

Z13

C12

Z12

DUT

C10

Z14

C22

C21

C18

C19

C20

C13

C14

C17

C16

C15

Z10

C11

Z11

Table 6. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Ferrite Bead, Surface Mount

2743019447

Fair-Rite

C1, C12, C18

18 pF Chip Capacitors

100B180JP 500X

ATC

0.6-4.5 pF Variable Capacitor, Gigatrim

27271SL

Johanson Dielectrics

C3, C11

0.8-8.0 pF Variable Capacitors, Gigatrim

27291SL

Johanson Dielectrics

6.2 pF Chip Capacitor

100B6R2JP 500X

ATC

C5, C6

12 pF Chip Capacitors

100B120JP 500X

ATC

C7, C8

11 pF Chip Capacitors

100B110JP 500X

ATC

C9, C10

5.1 pF Chip Capacitors

100B5R1JP 500X

ATC

C13

470 mF, 63 V Electrolytic Capacitor

NACZF471M63V

Nippon

C14, C15

22 mF, 50 V Tantalum Capacitors

T491X226K035AS

Kemet

C16, C17, C19

0.56 mF, 50 V Chip Capacitors

C1825C564J5GAC

Kemet

C20, C21

47 mF, 16 V Tantalum Capacitors

T491D4T6K016AS

Kemet

C22

100 mF, 50 V Electrolytic Capacitor

515D107M050BB6A

Multicomp

7.15 nH Inductor

1606-7

CoilCraft

22 nH Inductor

B07T-5

CoilCraft

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

920

830

- 70

IRL

ACPR

ALT

f, FREQUENCY (MHz)

Figure 3. IS-95 Broadband Performance @ P

out

= 20 Watts Avg.

, POWER GAIN (dB)

= 26 Vdc, P

out

= 20 W (Avg.), I

= 950 mA

N- CDMA IS- 95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)

- 30

- 10

- 20

- 15

INPUT

RETURN LOSS (dB)

IRL,

EFFICIENCY

(%)

ACPR (dBc),

(dBc)

- 25

, DRAIN

- 30

- 40

- 50

- 60

840

850

860

870

880

890

900

910

920

830

- 80

IRL

ACPR

ALT

f, FREQUENCY (MHz)

Figure 4. IS-95 Broadband Performance @ P

out

= 2 Watts Avg.

, POWER GAIN (dB)

= 26 Vdc, P

out

= 2 W (Avg.), I

= 950 mA

N- CDMA IS- 95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)

- 30

- 10

- 20

- 15

INPUT

RETURN LOSS (dB)

IRL,

EFFICIENCY

(%)

ACPR (dBc),

(dBc)

- 25

, DRAIN

- 40

- 50

- 60

- 70

840

850

860

870

880

890

900

910

1000

0.1

= 1425 mA

1150 mA

out

, OUTPUT POWER (WATTS) PEP

Figure 5. Two-Tone Power Gain versus

Output Power

, POWER GAIN (dB)

= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two- Tone Measurements, 100 kHz Tone Spacing

475 mA

700 mA

950 mA

100

1000

- 70

- 20

0.1

= 475 mA

1425 mA

out

, OUTPUT POWER (WATTS) PEP

Figure 6. Third Order Intermodulation Distortion

versus Output Power

= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two- Tone Measurements, 100 kHz Tone Spacing

950 mA

700 mA

1150 mA

- 25

- 30

- 35

- 40

- 45

- 50

- 55

- 60

- 65

100

IMD, THIRD

ORDER

INTERMODULA

TION DIST

TION (dBc)

RF Device Data

Freescale Semiconductor

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

TYPICAL CHARACTERISTICS

100

- 70

0.1

7th Order

TWO- TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

INTERMODULA

TION DIST

TION (dBc)

IMD,

= 26 Vdc, P

out

= 96 W (PEP), I

= 950 mA

Two- Tone Measurements, Center Frequency = 880 MHz

5th Order

3rd Order

- 10

- 20

- 30

- 40

- 50

- 60

, INPUT POWER (dBm)

Figure 8. Pulse CW Output Power versus

Input Power

, DRAIN EFFICIENCY

(%)

100

- 80

- 30

ACPR

ALT1

out

, OUTPUT POWER (WATTS) AVG.

Figure 9. Single-Carrier N-CDMA ACPR, Power

Gain, Efficiency and ALT1 versus Output Power

= 26 Vdc, I

= 950 mA, f = 880 MHz

N- CDMA IS- 95 (Pilot, Sync, Paging,
Traffic Codes 8 through 13)

, POWER GAIN (dB)

ACPR,

ADJACENT

CHANNEL

POWER RA

TIO (dBc)

T1, CHANNEL

POWER (dBm)

- 35

- 40

- 45

- 50

- 55

- 60

- 65

- 70

- 75

Ideal

P3dB = 51.58 dBm (143 W)

= 26 Vdc, I

= 950 mA

Pulsed CW, 8

µsec(on), 1 msec(off)

Center Frequency = 880 MHz

Actual

P1dB = 50.71 dBm (117 W)

180

= 12 V

out

, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain versus Output Power

, POWER GAIN (dB)

= 950 mA

f = 880 MHz

16 V

20 V

24 V

32 V

19.5

18.5

17.5

120

150

220

, JUNCTION TEMPERATURE (

°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

100

120

140

160

180

Figure 11. MTTF Factor versus Junction Temperature

MTTF F

ACT

OR (HOURS x AMPS

)

200

out

, OUTPUT POWER (dBm)

RF Device Data

Freescale Semiconductor

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

PACKAGE DIMENSIONS

TO-270 WB-4

PLASTIC

MRF5S9100NR1(MR1)

CASE 1486-03

ISSUE C

DATUM
PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS

"D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION

"b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE

"b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING
PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

RF Device Data

Freescale Semiconductor

TO-272 WB-4

PLASTIC

MRF5S9100NBR1(MBR1)

ÉÉÉÉÉÉ

CASE 1484-02

ISSUE B

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER

ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF

THE HEAT SLUG.

DATUM

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.600

- - -

15.24

- - -

.270

- - -

6.86

- - -

.928

.932

23.57

23.67

.551

.559

14.2

.353

.357

8.97

9.07

.164

.170

4.17

4.32

.007

.011

.18

.28

.063

.068

1.60

1.73

aaa

.106 BSC

.004

2.69 BSC

.10

GATE LEAD

aaa

C A

aaa

C A

VIEW Y-Y

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.025 BSC

0.64 BSC

ZONE J

SEATING

PLANE

.810 BSC

20.57 BSC

PIN 5

DRAIN LEAD

NOTE 8

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

.346

.350

8.79

8.89

RF Device Data

Freescale Semiconductor

MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1

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Document Number: MRF5S9100

Rev. 3, 7/2005

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S9100MBR1

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S9100MBR1