MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
· Typical GSM Performance: V

= 26 Volts, I

= 700 mA, P

out

100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain - 17.5 dB

Drain Efficiency - 60%

GSM EDGE Application
· Typical GSM EDGE Performance: V

= 28 Volts, I

= 650 mA, P

out

50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain -- 18 dB

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM -- 2.3% rms

· Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,

@ f = 960 MHz

· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· N Suffix Indicates Lead-Free Terminations
· 200°C Capable Plastic Package
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

- 0.5, +68

Vdc

Gate-Source Voltage

- 0.5, +15

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

427

2.44

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 50 W CW

0.41
0.47

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF5S9101

Rev. 2, 7/2005

Freescale Semiconductor

Technical Data

869-960 MHz, 100 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

MRF5S9101NR1

MRF5S9101NBR1

MRF5S9101MR1

MRF5S9101MBR1

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S9101NR1(MR1)

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S9101NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 400 µAdc)

GS(th)

2.8

3.5

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 700 mAdc)

GS(Q)

3.7

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2

Adc)

DS(on)

0.21

0.3

Vdc

Forward Transconductance

= 10 Vdc, I

= 6

Adc)

Dynamic Characteristics

(1)

Output Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 26

Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

2.2

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 26 Vdc, P

out

= 100 W, I

= 700 mA, f = 960 MHz

Power Gain

17.5

Drain Efficiency

Input Return Loss

IRL

-15

-9

out

@ 1 dB Compression Point, CW

P1dB

100

110

1. Part is internally input matched.

(continued)

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

0.698 x 0.827 Microstrip

0.720 x 0.788 Microstrip

0.195 x 0.087 Microstrip

0.524 x 0.087 Microstrip

0.233 x 0.087 Microstrip

0.560 x 0.087 Microstrip

0.095 x 0.827 Microstrip

0.472 x 0.087 Microstrip

0.384 x 0.087 Microstrip

Z10

1.491 x 0.087 Microstrip

Z11, Z12*

1.6 x 0.089 Microstrip

(quarter wave length for supply purpose)

Z13*

1.2 x 0.059 Microstrip

(quarter wave length for bias purpose)

PCB

Taconic TLX8-0300, 0.030,

= 2.55

*Variable for tuning

Figure 1. MRF5S9101NR1(NBR1)/MR1(MBR1) 900 MHz Test Circuit Schematic

INPUT

OUTPUT

C10

SUPPLY

BIAS

Z10

C11

C21

C19

C18

C20

C13

C16

C12

DUT

Z13

C17

Z11

Z12

C14

C15

Table 6. MRF5S9101NR1(NBR1)/MR1(MBR1) 900 MHz Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

C1, C2, C3

4.7 mF Chip Capacitors (2220)

GRM55ER7H475KA01

Murata

C4, C5, C6

10 nF 200B Chip Capacitors

200B103MW

ATC

C7, C8, C9

33 pF 100B Chip Capacitors

100B330JW

ATC

C10, C11

22 pF 100B Chip Capacitors

100B220GW

ATC

C12, C13

10 pF 100B Chip Capacitors

100B100GW

ATC

C14, C15, C16, C17

8.2 pF 100B Chip Capacitors

100B8R2CW

ATC

C18

5.6 pF 100B Chip Capacitor

100B5R6CW

ATC

C19

4.7 pF 100B Chip Capacitor

100B4R7BW

ATC

C20

3.9 pF 100B Chip Capacitor

100B3R9BW

ATC

C21

220 mF, 50 V Electrolytic Capacitor, Axial

516D227M050NP7B

Sprague

R1, R2

10 kW, 1/4 W Chip Resistors (1206)

10 W, 1/4 W Chip Resistor (1206)

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

TYPICAL CHARACTERISTICS - 900 MHz

1020

860

- 45

- 15

- 30

880

900

920

940

960

980

1000

, POWER GAIN (dB)

INPUT

RETURN LOSS (dB)

IRL,

f, FREQUENCY (MHz)

Figure 3. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ P

out

= 100 Watts CW

IRL

= 26 Vdc

= 700 mA

1020

860

- 24

- 8

- 16

- 20

880

900

920

940

960

980

1000

, POWER GAIN (dB)

IRL

= 26 Vdc

= 700 mA

f, FREQUENCY (MHz)

Figure 4. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ P

out

= 40 Watts CW

- 12

1000

= 1500 mA

1300 mA

out

, OUTPUT POWER (WATTS)

Figure 5. Power Gain versus Output Power

, POWER GAIN (dB)

= 26 Vdc

f = 940 MHz

1100 mA

900 mA

700 mA

500 mA

300 mA

100

200

out

, OUTPUT POWER (WATTS) CW

Figure 6. Power Gain versus Output Power

, POWER GAIN (dB)

= 12 V

16 V

24 V

28 V

32 V

100

120

140

160

180

20 V

, DRAIN EFFICIENCY (%)

INPUT

RETURN LOSS (dB)

IRL,

, DRAIN EFFICIENCY (%)

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS - 900 MHz

1000

= - 30

out

, OUTPUT POWER (WATTS) CW

Figure 7. Power Gain and Drain Efficiency

versus CW Output Power

, POWER GAIN (dB)

= 26 Vdc

= 700 mA

f = 940 MHz

= - 30

100

980

3.5

900

out

= 50 W Avg.

f, FREQUENCY (MHz)

Figure 8. Error Vector Magnitude versus

Frequency

EVM, ERROR VECT

OR MAGNITUDE (% rms)

= 28 Vdc

= 650 mA

40 W Avg.

25 W Avg.

2.5

1.5

0.5

910

920

930

940

950

960

970

100

EVM

out

, OUTPUT POWER (WATTS) AVG.

Figure 9. Error Vector Magnitude and Drain

Efficiency versus Output Power

EVM, ERROR VECT

OR MAGNITUDE (% rms)

= 85

- 30

= 28 Vdc

= 650 mA

f = 940 MHz

980

- 83

- 63

900

SR 400 kHz

f, FREQUENCY (MHz)

Figure 10. Spectral Regrowth at 400 kHz and

600 kHz versus Frequency

SPECTRAL

REGROWTH @ 400 kHz and 600 kHz (dBc)

= 28 Vdc

= 650 mA

f = 940 MHz

- 68

- 73

- 78

910

920

930

940

950

960

970

out

= 50 W Avg.

SR 600 kHz

25 W Avg.

40 W Avg.

25 W Avg.

40 W Avg.

50 W Avg.

- 80

- 45

= 85

out

, OUTPUT POWER (WATTS) AVG.

Figure 11. Spectral Regrowth at 400 kHz

versus Output Power

SPECTRAL

REGROWTH @ 400 kHz (dBc)

- 30

- 60

- 65

- 70

- 50

- 55

- 75

= 28 Vdc

= 650 mA

f = 940 MHz

, DRAIN EFFICIENCY (%)

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

TYPICAL CHARACTERISTICS - 900 MHz

- 85

- 65

= 85

out

, OUTPUT POWER (WATTS) AVG.

Figure 12. Spectral Regrowth @ 600 kHz

versus Output Power

SPECTRAL

REGROWTH @ 600 kHz (dBc)

- 30

- 70

- 75

- 80

= 28 Vdc

= 650 mA

f = 940 MHz

, JUNCTION TEMPERATURE (

°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

Figure 13. MTTF Factor versus Junction Temperature

210

1.E+07

1.E+10

MTTF F

ACT

OR (HOURS X AMPS

)

1.E+09

1.E+08

100 110 120 130 140 150 160 170 180 190 200

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

Figure 14. MRF5S9101NR1(NBR1)/MR1(MBR1) 800 MHz Test Circuit Schematic

0.432 x 0.827 Microstrip

0.720 x 0.788 Microstrip

0.195 x 0.087 Microstrip

0.584 x 0.087 Microstrip

0.173 x 0.087 Microstrip

0.560 x 0.087 Microstrip

0.378 x 0.827 Microstrip

0.279 x 0.087 Microstrip

0.193 x 0.087 Microstrip

Z10

0.897 x 0.087 Microstrip

Z11

1.161 x 0.087 Microstrip

Z12, Z13*

1.6 x 0.089 Microstrip

(quarter wave length for supply purpose)

Z14*

1.2 x 0.059 Microstrip

(quarter wave length for bias purpose)

PCB

Taconic TLX8-0300, 0.030,

= 2.55

*Variable for tuning

INPUT

OUTPUT

C10

SUPPLY

BIAS

Z11

C11

C21

C19

C13

C16

C12

DUT

Z14

C17

Z12

Z13

C14

C15

C22

C18

C20

Z10

Table 7. MRF5S9101NR1(NBR1)/MR1(MBR1) 800 MHz Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

C1, C2, C3

4.7 mF Chip Capacitors (2220)

GRM55ER7H475KA01

Murata

C4, C5, C6

10 nF 200B Chip Capacitors

200B103MW

ATC

C7, C8, C9

33 pF 100B Chip Capacitors

100B330JW

ATC

C10, C11

22 pF 100B Chip Capacitors

100B220GW

ATC

C12, C13, C17

10 pF 100B Chip Capacitors

100B100GW

ATC

C14, C15

8.2 pF 100B Chip Capacitors

100B8R2CW

ATC

C16, C22

6.8 pF 100B Chip Capacitors

100B6R8CW

ATC

C18

5.6 pF 100B Chip Capacitor

100B5R6CW

ATC

C19, C20

2.7 pF 100B Chip Capacitors

100B2R7BW

ATC

C21

220 mF, 50 V Electrolytic Capacitor, Axial

516D227M050NP7B

Sprague

R1, R2

10 kW, 1/4 W Chip Resistors (1206)

10 W, 1/4 W Chip Resistor (1206)

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS - 800 MHz

940

820

- 20

- 10

- 12

- 14

- 16

- 18

830 840 850 860 870 880 890 900 910 920 930

f, FREQUENCY (MHz)

Figure 16. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ P

out

= 100 W CW

, POWER GAIN (dB)

IRL

= 26 Vdc

= 700 mA

940

820

- 20

IRL

f, FREQUENCY (MHz)

Figure 17. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ P

out

= 40 W CW

, POWER GAIN (dB)

= 26 Vdc

= 700 mA

- 10

- 12

- 14

- 16

- 18

830 840 850 860 870 880 890 900 910 920 930

910

3.5

850

out

= 50 W Avg.

f, FREQUENCY (MHz)

Figure 18. Error Vector Magnitude versus

Frequency

= 28 Vdc

= 650 mA

EVM, ERROR VECT

OR MAGNITUDE (% rms)

2.5

1.5

0.5

860

870

880

890

900

40 W Avg.

25 W Avg.

100

out

, OUTPUT POWER (WATTS) AVG.

Figure 19. Error Vector Magnitude and Drain

Efficiency versus Output Power

= 28 Vdc

= 650 mA

f = 880 MHz

EVM

, DRAIN EFFICIENCY

(%)

EVM, ERROR VECT

OR MAGNITUDE (% rms)

= 25

INPUT

RETURN LOSS (dB)

IRL,

, DRAIN EFFICIENCY (%)

INPUT

RETURN LOSS (dB)

IRL,

, DRAIN EFFICIENCY (%)

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

TYPICAL CHARACTERISTICS - 800 MHz

910

- 82

- 64

850

SR 400 kHz

out

= 50 W Avg.

f, FREQUENCY (MHz)

Figure 20. Spectral Regrowth at 400 kHz and

600 kHz versus Frequency

SPECTRAL

REGROWTH @ 400 kHz

AND 600 kHz (dBc)

SR 600 kHz

40 W Avg.

25 W Avg.

out

= 50 W Avg.

40 W Avg.

25 W Avg.

- 66

- 68

- 70

- 72

- 74

- 76

- 78

- 80

860

870

880

900

890

= 28 Vdc

= 650 mA

- 80

- 45

= 25

out

, OUTPUT POWER (WATTS) AVG.

Figure 21. Spectral Regrowth at 400 kHz

versus Output Power

= 28 Vdc

= 650 mA

f = 880 MHz

SPECTRAL

REGROWTH @ 400 kHz (dBc)

- 50

- 55

- 60

- 65

- 70

- 75

- 85

- 65

= 25

out

, OUTPUT POWER (WATTS) AVG.

Figure 22. Spectral Regrowth at 600 kHz

versus Output Power

= 28 Vdc

= 650 mA

f = 880 MHz

SPECTRAL

REGROWTH @ 400 kHz (dBc)

- 70

- 75

- 80

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

Figure 23. Series Equivalent Source and Load Impedance

MHz

source

load

845

865

4.29 - j2.23

2.72 - j0.96

3.94 - j1.24

1.15 - j0.04

1.05 - j0.10

1.02 - j0.07

26 Vdc, I

= 700 mA, P

out

= 100 W CW

= 5

f = 990 MHz

f = 845 MHz

890

920

1.96 - j1.02

1.03 - j0.15

load

source

= Test circuit impedance as measured from

gate to ground.

load

= Test circuit impedance as measured

from drain to ground.

Z source

Z load

Input
Matching
Network

Device
Under Test

Output
Matching
Network

1.58 - j1.43

1.03 - j0.05

960

990

1.27 - j1.54

0.73 - j0.07

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

PACKAGE DIMENSIONS

CASE 1486-03

ISSUE C

DATUM
PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS

"D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION

"b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE

"b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING
PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

TO-270 WB-4

PLASTIC

MRF5S9101NR1(MR1)

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

RF Device Data

Freescale Semiconductor

TO-272 WB-4

PLASTIC

MRF5S9101NBR1(MBR1)

ÉÉÉÉÉÉÉ

CASE 1484-02

ISSUE B

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER

ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF

THE HEAT SLUG.

DATUM

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.600

- - -

15.24

- - -

.270

- - -

6.86

- - -

.928

.932

23.57

23.67

.551

.559

14.2

.353

.357

8.97

9.07

.164

.170

4.17

4.32

.007

.011

.18

.28

.063

.068

1.60

1.73

aaa

.106 BSC

.004

2.69 BSC

.10

GATE LEAD

aaa

C A

aaa

C A

VIEW Y-Y

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.025 BSC

0.64 BSC

ZONE J

SEATING

PLANE

.810 BSC

20.57 BSC

PIN 5

DRAIN LEAD

NOTE 8

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

.346

.350

8.79

8.89

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.

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For Literature Requests Only:

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Document Number: MRF5S9101

Rev. 2, 7/2005

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S9101NR1

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF5S9101NR1