MRF6P21190HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2 x 950 mA, P
out
= 44 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 15.5 dB
Drain Efficiency -- 26.5%
IM3 @ 10 MHz Offset -- -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
700
4
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
190
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 190 W CW
Case Temperature 72C, 44 W CW
R
JC
0.25
0.27
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6P21190HR6
Rev. 2, 8/2005
Freescale Semiconductor
Technical Data
MRF6P21190HR6
2170 MHz, 44 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 250 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1900 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
0.1
0.21
0.3
Vdc
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2 x 950 mA, P
out
= 44 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
14.5
15.5
17.5
dB
Drain Efficiency
D
25
26.5
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-40
-38
dBc
Input Return Loss
IRL
--
-15
-9
dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push-pull configuration.
MRF6P21190HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Z15, Z16
0.289 x 0.712 Microstrip
Z17, Z18
0.127 x 0.200 Microstrip
Z19, Z20
0.288 x 0.067 Microstrip
Z21
0.088 x 0.067 Microstrip
Z22
1.830 x 0.067 Microstrip
Z23
1.140 x 0.114 Microstrip
Z24
0.850 x 0.066 Microstrip
PCB
Taconic RF-35, 0.030,
r
= 3.5
Z1
0.850 x 0.067 Microstrip
Z2
1.140 x 0.114 Microstrip
Z3
1.830 x 0.067 Microstrip
Z4
0.088 x 0.067 Microstrip
Z5, Z6
0.250 x 0.067 Microstrip
Z7, Z8
0.324 x 0.178 Microstrip
Z9, Z10
0.143 x 0.655 Microstrip
Z11, Z12
0.111 x 0.655 Microstrip
Z13, Z14
0.124 x 0.712 Microstrip
RF
INPUT
C3
R1
C4
+
C2
V
BIAS
R2
B2
B1
C5
C6
+
Z6
Z8
Z10
Z12
C1
Z5
Z7
Z9
Z11
C7
Z1
Z2
Z3
DUT
C9
R3
C10
+
C8
R4
B4
B3
C11
C12
+
C14
+
C15
C19
C16
C17
C18
+
C20
+
C21
+ V
SUPPLY
Z14
Z16
Z18
Z20
C13
Z13
Z15
Z17
Z19
C22
C23
+
C24
C28
C25
C26
C27
+
C29
+
C30
+ V
SUPPLY
RF
OUTPUT
Z23
Z24
V
BIAS
Z4
Z22
Z21
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
RF Beads
2743019447
Fair-Rite
C1, C7
30 pF Chip Capacitors
100B300JP500X
ATC
C2, C8, C15, C24
6.8 pF Chip Capacitors
100B6R8CP500X
ATC
C3, C9, C18, C27
1k pF Chip Capacitors
100B102JP50X
ATC
C4, C10
1 F, 50 V Tantalum Chip Capacitors
T491C105K050AS
Kemet
C5, C11, C17, C26
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C6, C12
100 F, 50 V Electrolytic Capacitors, Radial
MCR50V107M8X11
Multicomp
C13, C22
43 pF Chip Capacitors
100B430JP500X
ATC
C14, C19, C20, C23,
C28, C29
22 F, 35 V Tantalum Chip Capacitors
T491X226K035AS
Kemet
C16, C25
0.56 F Chip Capacitors (1825)
C1825C564J5RAC
Kemet
C21, C30
470 F, 63 V Electrolytic Capacitors, Radial
MCR63V477M13X26
Multicomp
R1, R3
1 kW, 1/4 W Chip Resistors (1206)
CRCW12061001F100
Vishay
R2, R4
12 W, 1/4 W Chip Resistors (1206)
CRCW120612R0F100
Vishay
4
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
-
+
-
-
+
+
-
C6
+
R1
C5
C4
C3
C2
R2
B1
B2
C1
C7
R4 B3 B4
C8
C9
C10
C11
R3
C12
C15
C14
C16
C17
C18
C21
C19
C20
C13
C22
C28
C29
C23
C24
C25
C26
C27
C30
CUT
OUT
AREA
MRF6P21190
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF6P21190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-30
-10
-15
-20
-25
2220
2080
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 44 Watts Avg.
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 1900 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
-50
40
30
20
10
-10
-20
-30
-40
D
, DRAIN
EFFICIENCY (%)
D
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-30
-10
-15
-20
-25
2220
2080
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 87 Watts Avg.
V
DD
= 28 Vdc, P
out
= 87 W (Avg.), I
DQ
= 1900 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
-40
50
40
30
20
0
-10
-20
-30
D
, DRAIN
EFFICIENCY (%)
D
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
100
14
17
1
I
DQ
= 2500 mA
2200 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
16.5
16
15.5
10
400
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
14.5
15
1900 mA
1600 mA
1300 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-45
-30
1
I
DQ
= 2500 mA
1300 mA
100
-35
-40
400
-55
-50
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
2200 mA
1900 mA
1600 mA
6
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-55
-15
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 190 W (PEP), I
DQ
= 1900 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
-20
-30
-40
-45
-50
1
100
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
-25
-35
Figure 8. Pulse CW Output Power versus
Input Power
44
58
34
P3dB = 54.45 dBm (279 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1900 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 2140 MHz
56
54
52
47
36
38
40
42
Actual
Ideal
P1dB = 53.7 dBm (233 W)
57
48
32
P
out
, OUTPUT POWER (dBm) 50
IM3 (dBc), ACPR (dBc)
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
-60
P
out
, OUTPUT POWER (WATTS) AVG.
30
-30
25
20
-35
15
-40
5
-50
1
10
100
-45
10
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
-55
IM3
D
G
ps
ACPR
300
0
18
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1900 mA
f = 2140 MHz
100
10
15
12
9
6
3
50
40
30
20
10
D
,
DRAIN
EFFICIENCY (%)
G
ps
D
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 28 V
G
ps
, POWER GAIN (dB)
500
6
18
10
16
10
8
100
12
14
24 V
I
DQ
= 1900 mA
f = 2140 MHz
20 V
16 V
12 V
V
DD
= 28 Vdc, I
DQ
= 1900 mA
f1 = 2135 MHz, f2 = 2145 MHz
2-Carrier W-CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
3
3
55
53
51
49
33
35
37
39
41
43
MRF6P21190HR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
10
9
10
8
10
7
110
130
150
170
190
90
100
120
140
160
180
200
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
MTTF
F
ACT
OR (HOURS x AMPS
2
)
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
PROBABILITY (%)
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
5
15
10
0
-5
-10
-15
-20
-25
25
-30
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ +5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ +10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
8
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2000
2110
2140
3.43 - j10.06
3.39 - j6.07
3.22 - j7.13
5.63 - j12.88
4.36 - j10.02
4.56 - j8.49
V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 44 W Avg.
Z
o
= 25
Z
load
f = 2200 MHz
f = 2000 MHz
Z
source
2170
2200
3.69 - j5.16
3.76 - j5.45
5.11 - j7.41
5.42 - j6.67
f = 2000 MHz
f = 2200 MHz
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-
+
+
MRF6P21190HR6
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
NOTES
MRF6P21190HR6
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 375D-05
ISSUE E
NI-1230
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.615
1.625
41.02
41.28
B
0.395
0.405
10.03
10.29
C
0.150
0.200
3.81
5.08
D
0.455
0.465
11.56
11.81
E
0.062
0.066
1.57
1.68
F
0.004
0.007
0.10
0.18
G
1.400 BSC
35.56 BSC
H
0.082
0.090
2.08
2.29
K
0.117
0.137
2.97
3.48
L
0.540 BSC
13.72 BSC
N
1.218
1.242
30.94
31.55
Q
0.120
0.130
3.05
3.30
R
0.355
0.365
9.01
9.27
A
G
L
D
K
4X
Q
2X
1
2
4
3
M
1.219
1.241
30.96
31.52
S
0.365
0.375
9.27
9.53
aaa
0.013 REF
0.33 REF
bbb
0.010 REF
0.25 REF
ccc
0.020 REF
0.51 REF
SEATING
PLANE
N
C
E
M
M
A
M
aaa
B
M
T
B
B
(FLANGE)
H
F
M
A
M
ccc
B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
bbb
B
M
T
4X
A
T
M
A
M
bbb
B
M
T
(INSULATOR)
M
A
M
ccc
B
M
T
(LID)
PIN 5
M
A
M
bbb
B
M
T
4
12
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
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1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6P21190HR6
Rev. 2, 8/2005
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