MRF6P27160HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for N-CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical Single-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 2 x
900 mA, P
out
= 35 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 14.6 dB
Drain Efficiency -- 22.6%
ACPR @ 885 kHz Offset -- -47.8 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
603
3.45
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
160
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 160 W CW
Case Temperature 71C, 35 W CW
R
JC
0.29
0.31
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF6P27160H
Rev. 0, 1/2005
Freescale Semiconductor
Technical Data
MRF6P27160HR6
2700 MHz, 35 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Volta
(V
DS
= 10 Vdc, I
D
= 250 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 900 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.8
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2 x 900 mA, P
out
= 35 W Avg. N-CDMA,
f = 2630 and 2660 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
13
14.6
16
dB
Drain Efficiency
D
20
22.6
--
%
Adjacent Channel Power Ratio
ACPR
--
-47.8
-45
dBc
Input Return Loss
IRL
--
-13
-9
dB
1. Part is internally matched both on input and output.
MRF6P27160HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Z20, Z21
0.160 x 0.760 Microstrip
Z22, Z23
0.240 x 0.150 Microstrip
Z24, Z25
0.170 x 0.420 Microstrip
Z26, Z27
0.260 x 0.080 Microstrip
Z28, Z29
0.040 x 0.258 Microstrip
Z32
0.622 x 0.139 Microstrip
Z33
0.346 x 0.081 Microstrip
Z34, Z35
0.801 x 0.050 Microstrip
Z36, Z37
0.460 x 0.095 Microstrip
PCB
Arlon GX-0300-5022, 0.030,
r
= 2.5
Z1
1.011 x 0.139 Microstrip
Z2, Z31
0.150 x 0.070 Microstrip
Z3, Z30
1.500 x 0.086 Microstrip
Z4, Z5
0.050 x 0.230 Microstrip
Z6, Z7
0.170 x 0.080 Microstrip
Z8, Z9
0.144 x 0.340 Microstrip
Z10, Z11
0.400 x 0.210 Microstrip
Z12, Z13
0.280 x 0.710 Microstrip
Z14, Z15
0.461 x 0.490 Microstrip
Z16, Z17
0.357 x 0.766 Microstrip
Z18, Z19
0.284 x 0.415 Microstrip
RF
INPUT
C5
C7
+
C3
V
BIAS
B1
Z5
Z7
Z9
Z13
C1
Z4
Z6
Z8
Z12
C2
Z1
Z2
DUT
C16
C17
C18
+
V
SUPPLY
Z17
Z19
Z21
Z23
C13
RF
OUTPUT
Z32
Z33
Z3
Z31
C6
+
Z35
C4
Z11
Z10
Z15
Z14
Z37
C19
+
C10
C12
+
C8
V
BIAS
B2
C11
+
Z34
C9
Z25
Z27
Z29
Z16
Z18
Z20
Z22
C14
Z30
Z24
Z26
Z28
C21
C22
C23
+
V
SUPPLY
Z36
C24
+
R1
R2
C15
C20
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair-Rite
C1, C2
5.6 pF Chip Capacitors
100B5R6CP500X
ATC
C3, C8, C15, C20
3.3 pF Chip Capacitors
100B3R3CP500X
ATC
C4, C9
0.01 F Chip Capacitors (1825)
C1825C103J1RAC
Kemet
C5, C10
2.2 F, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6, C11
22 F, 25 V Tantalum Chip Capacitors
ECS-T1ED226R
Panasonic TE Series
C7, C12
47 F, 16 V Tantalum Chip Capacitors
T491D476K016AS
Kemet
C13, C14
4.3 pF Chip Capacitors
100B4R3CP500X
ATC
C16, C17, C21, C22
10 F, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C18, C23
47 F, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
Nippon
C19, C24
330 F, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1, R2
3.3 W, 1/4 W Chip Resistors (1210)
ERJ-14YJ3R3U
Dale/Vishay
4
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
Figure 2. MRF6P27160HR6 Test Circuit Component Layout
-
+
-
+
CUT
OUT
AREA
MRF6P27160H
Rev 5
B1
C7 C6
C5*
C3
R1
C4*
C1
C2
B2
C9*
C10*
C8
R2
C12 C11
C17
C16
C15
C19
C18
C13
C14
C20
C21
C22
C23
C24
*Stacked
MRF6P27160HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2700
2600
2690
2680
2670
2660
2650
2620
2610
2630 2640
-15
-11
-12
-13
-14
-16
-14
-10
-11
-12
-13
-15
IRL,
INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
2700
2600
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ P
out
= 35 Watts Avg.
2690
2680
2670
2660
2650
2620
2610
16
15.8
-65
24
22
-40
-50
-55
IRL
G
ps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ P
out
= 70 Watts Avg.
15.2
15.1
-60
35
31
-30
-35
-45
-55
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
0.1
I
DQ
= 2700 mA
2250 mA
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
10
1000
-30
1
I
DQ
= 900 mA
P
out
, OUTPUT POWER (WATTS) PEP
100
-40
-50
-60
10
D
, DRAIN
EFFICIENCY (%)
D
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
15.4
15
14.6
14.2
14
V
DD
= 28 Vdc, P
out
= 35 W (Avg.),
I
DQ
= 1800 mA, N-CDMA IS-95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.9
14.7
14.5
14.3
14
13
900 mA
-20
1800 mA
14.4
14.8
15.2
15.6
-60
-45
20
15
14.8
14.6
14.4
33
-40
-50
D
ACPR
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
1350 mA
2630 2640
IRL
ALT1
14.2
14.1
-10
ALT1
V
DD
= 28 Vdc, P
out
= 70 W (Avg.),
I
DQ
= 1800 mA, N-CDMA IS-95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
1
1800 mA
1350 mA
0.1
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
2250 mA
2700 mA
23
21
34
32
30
6
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-10
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1800 mA
Two-Tone Measurements, Center Frequency = 2645 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
100
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 8. Pulse CW Output Power versus
Input Power
42
58
P3dB = 54.32 dBm (270.33 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1800 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 2645 MHz
56
54
52
50
36
38
40
Actual
Ideal
P1dB = 53.64 dBm (231.15 W)
57
34
P
out
, OUTPUT POWER (dBm)
ACPR (dBc), AL
T1 (dBc)
Figure 9. Single-Carrier N-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
0
-70
P
out
, OUTPUT POWER (WATTS) AVG. W-CDMA
35
-35
25
20
-45
15
-50
5
-60
1
10
100
-55
10
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
-65
D
G
ps
400
-5
20
0
50
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1800 mA
f = 2645 MHz
10
15
5
30
20
10
D
,
DRAIN
EFFICIENCY (%)
G
ps
D
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 16 V
G
ps
, POWER GAIN (dB)
300
10
16
60
15
11
120
12
14
32 V
I
DQ
= 1800 mA
f = 2645 MHz
24 V
20 V
0
55
53
51
35
37
39
41
30
-40
ALT1
V
DD
= 28 Vdc, I
DQ
= 1800 mA, f = 2645 MHz
Single-Carrier N-CDMA, 1.2288 MHz Channel
Bandwidth, Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
0
40
13
180
240
ACPR
0.1
1
100
10
28 V
MRF6P27160HR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
N-CDMA TEST SIGNAL
210
10
10
10
9
10
8
10
7
110
130
150
170
190
90
100
120
140
160
180
200
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 12. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
PROBABILITY (%)
-60
-110
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR @ 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 13. Single-Carrier N-CDMA Spectrum
-ACPR @ 30 kHz
Integrated BW
T
J
, JUNCTION TEMPERATURE (
C)
Figure 14. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
MTTF
F
ACT
OR (HOURS X AMPS
2
)
8
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2600
2610
2620
5.24 + j2.46
5.71 + j1.59
5.69 + j2.04
6.90 + j0.61
6.85 + j0.63
6.76 + j0.59
V
DD
= 28 Vdc, I
DQ
= 1800 mA, P
out
= 35 W Avg.
2630
2640
5.45 + j1.42
5.62 + j1.48
6.50 + j0.59
6.13 + j0.56
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-
+
+
2645
2650
5.31 + j1.58
5.38 + j1.49
5.95 + j0.69
5.81 + j0.83
2660
2670
5.45 + j2.09
5.24 + j1.81
5.61 + j1.15
5.69 + j1.48
2680
5.84 + j2.22
5.91 + j1.67
2690
2700
6.49 + j1.92
6.22 + j2.12
6.12 + j1.68
6.17 + j1.60
Z
o
= 10
Z
load
f = 2600 MHz
Z
source
f = 2700 MHz
f = 2600 MHz
f = 2700 MHz
MRF6P27160HR6
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
NOTES
MRF6P27160HR6
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 375D-05
ISSUE D
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.615
1.625
41.02
41.28
B
0.395
0.405
10.03
10.29
C
0.150
0.200
3.81
5.08
D
0.455
0.465
11.56
11.81
E
0.062
0.066
1.57
1.68
F
0.004
0.007
0.10
0.18
G
1.400 BSC
35.56 BSC
H
0.082
0.090
2.08
2.29
K
0.117
0.137
2.97
3.48
L
0.540 BSC
13.72 BSC
N
1.218
1.242
30.94
31.55
Q
0.120
0.130
3.05
3.30
R
0.355
0.365
9.01
9.27
A
G
L
D
K
4X
Q
2X
1
2
4
3
M
1.219
1.241
30.96
31.52
S
0.365
0.375
9.27
9.53
aaa
0.013 REF
0.33 REF
bbb
0.010 REF
0.25 REF
ccc
0.020 REF
0.51 REF
SEATING
PLANE
N
C
E
M
M
A
M
aaa
B
M
T
B
B
(FLANGE)
H
F
M
A
M
ccc
B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
bbb
B
M
T
4X
A
T
M
A
M
bbb
B
M
T
(INSULATOR)
M
A
M
ccc
B
M
T
(LID)
PIN 5
M
A
M
bbb
B
M
T
4
NI-1230
12
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
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