MRF6P9220HR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large -signal, common -source amplifier
applications in 28 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1600 mA, P
out
= 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 20 dB
Drain Efficiency -- 30%
ACPR @ 750 kHz Offset -- -47.1 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
700
4
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
220
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 220 W CW
Case Temperature 76C, 47 W CW
R
JC
0.25
0.28
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6P9220H
Rev. 1, 11/2005
Freescale Semiconductor
Technical Data
MRF6P9220HR3
880 MHz, 47 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 350 Adc)
V
GS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
V
DS(on)
0.1
0.22
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.4 Adc)
g
fs
--
7.4
--
S
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.1
--
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 47 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
18.5
20
23
dB
Drain Efficiency
D
28.5
30
--
%
Adjacent Channel Power Ratio
ACPR
--
-47.1
-45
dBc
Input Return Loss
IRL
--
-14
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
MRF6P9220HR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P9220HR3 Test Circuit Schematic
Z10, Z11
1.054 x 0.150 Microstrip
Z12, Z13
0.225 x 0.507 Microstrip
Z14, Z15
0.440 x 0.335 Microstrip
Z16, Z17
0.123 x 0.140 Microstrip
Z19, Z20
0.165 x 0.339 Microstrip
PCB
GX-0300, 0.030,
r
= 2.55
Z1, Z18
0.401 x 0.081 Microstrip
Z2, Z3
0.563 x 0.081 Microstrip
Z4, Z5
0.416 x 0.727 Microstrip
Z6, Z7
0.058 x 1.01 Microstrip
Z8, Z9
0.191 x 0.507 Microstrip
RF
INPUT
C2
R3
C1
C3
V
BIAS
Z4
C4
Z5
C5
Z1
DUT
C8
C9
R2
B2
V
SUPPLY
Z8
Z9
Z13
Z15
C13
C24
C19
V
SUPPLY
RF
OUTPUT
Z18
V
BIAS
Z6
Z7
Z2
Z3
Z11
Z10
+
+
+
C7
R1
B1
C14
C12
Z12
Z14
C20
C22
+
C21
C23
C15
+
C16
C18
+
C17
C6
COAX1
COAX2
COAX3
COAX4
Z19
Z20
C11
C10
Z17
Z16
Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair-Rite
C1, C9
1.0 F, 50 V Tantalum Chip Capacitors
T491C105K050AS
Kemet
C2, C7, C17, C21
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C3, C8, C16, C20
1000 pF 100B Chip Capacitors
100B102JP50X
ATC
C4, C5, C13, C14
100 pF 100B Chip Capacitors
100B101JP500X
ATC
C6, C12
8.2 pF 600B Chip Capacitors
600B8R2BT250XT
ATC
C10
9.1 pF 600B Chip Capacitor
600B9R1BT250XT
ATC
C11
1.8 pF 600B Chip Capacitor
600B1R8BT250XT
ATC
C15, C19
47 F, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
Nippon
C18, C22
470 F, 63 V Electrolytic Capacitors
SME63V471M12X25LL
United Chemi-Con
C23, C24
22 pF 600B Chip Capacitors
600B220FT250XT
ATC
Coax1, 2, 3, 4
50 , Semi Rigid Coax, 2.40 Long
UT-141A-TP
Micro-Coax
R1, R2
10 , 1/8 W Chip Resistors (1206)
R3
1.0 k, 1/8 W Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRF6P9220, Rev
.
1
V
GG
V
DD
V
DD
V
GG
COAX3
COAX4
COAX1
COAX2
C1
C23
B1
R1
R3
C2
C3
C4
C5
C6
C7
C8
B2
R2
C15
C18
C17
C16
C11
C10
C13
C12
C14
C24
C19
C22
C21
C20
CUT
OUT
AREA
C9
MRF6P9220HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,
POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
-17
-11
-15
910
850
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ P
out
= 47 Watts Avg.
900
890
880
870
860
21
20.4
-70
31
28
-55
-60
-65
D
,
DRAIN
EFFICIENCY (%)
D
19.2
18.9
18.3
18
20.7
20.1
19.8
29
27
-45
-9
-13
18.6
19.5
30
-50
-7
ALT1
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
-17
-11
-15
910
850
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ P
out
= 94 Watts Avg.
900
890
880
870
860
20
19.6
-60
42
39
-45
-50
-55
D
,
DRAIN
EFFICIENCY (%)
D
18.8
18.6
18.2
18
19.8
19.4
19.2
40
38
-35
-9
-13
18.4
19
41
-40
-7
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
17
20.5
3
I
DQ
= 2400 mA
2000 mA
P
out
, OUTPUT POWER (WATTS) PEP
20
19
100
500
G
ps
, POWER GAIN (dB)
17.5
1600 mA
19.5
18.5
18
10
1200 mA
800 mA
V
DD
= 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
Two-Tone Measurements, 100 kHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
100
-20
-30
-40
-50
-60
10
INTERMODULA
TION DISTORTION (dBc)
IMD, THIRD ORDER
-10
I
DQ
= 800 mA
2000 mA
1200 mA
1600 mA
V
DD
= 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
Two-Tone Measurements, 100 kHz Tone Spacing
500
5
2400 mA
V
DD
= 28 Vdc, P
out
= 47 W (Avg.)
I
DQ
= 1600 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
V
DD
= 28 Vdc, P
out
= 94 W (Avg.)
I
DQ
= 1600 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
6
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
-90
-10
10
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc, I
DQ
= 1600 mA, f1 = 879.95 MHz
f2 = 880.05 MHz, Two-Tone Measurements
Center Frequency = 880 MHz
3rd Order
-20
-30
-40
-50
100
500
IMD,
INTERMODULA
TION DISTORTION (dBc)
-60
5th Order
7
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-20
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 220 W (PEP)
I
DQ
= 1600 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
-25
-30
-40
-50
1
50
IMD,
INTERMODULA
TION DISTORTION (dBc)
-35
-45
Figure 9. Pulse CW Output Power versus
Input Power
41
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 880 MHz
61
59
57
49
Actual
Ideal
51
29
P
out
, OUTPUT POWER (dBm)
55
53
31
33
35
37
39
P6dB = 54.95 dBm (312.77 W)
ACPR, ADJACENT CHANNEL POWER RA
TIO
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0
-55
P
out
, OUTPUT POWER (WATTS) AVG.
50
-30
30
10
-35
-40
-50
10
100
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
G
ps
ACPR
-30
_C
40
1
300
20
-45
85
_C
T
C
= -30
_C
25
_C
D
-80
-70
-55
V
DD
= 28 Vdc, I
DQ
= 1600 mA
f = 880 MHz, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W)
25
_C
25
_C
85
_C
MRF6P9220HR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
500
17
21
8
72
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1600 mA
f = 880 MHz
100
10
20
19.5
19
18
56
48
40
32
24
D
,
DRAIN EFFICIENCY (%)
G
ps
D
G
ps
, POWER GAIN (dB)
7
T
C
= -30
_C
85
_C
25
_C
-30
_C
20.5
64
25
_C
85
_C
Figure 12. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 12 V
G
ps
, POWER GAIN (dB)
400
14.5
20.5
50
19.5
15.5
200
16.5
17.5
24 V
I
DQ
= 1600 mA
f = 880 MHz
20 V
16 V
32 V
0
18.5
100
150
250
300
350
28 V
210
10
10
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 13. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
120
140
160
180
200
MTTF
F
ACTOR (HOURS x AMPS
2
)
10
9
100
190
170
150
130
110
18.5
17.5
16
8
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
PROBABILITY (%)
-60
-110
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
-ACPR in 30 kHz
Integrated BW
ALT1
ALT1
MRF6P9220HR3
9
RF Device Data
Freescale Semiconductor
f
MHz
Z
source
Z
load
850
865
880
3.50 - j7.10
3.03 - j6.98
3.59 - j7.07
6.04 - j0.49
6.83 - j1.14
7.41 - j1.19
V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 47 W Avg.
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-
+
+
Figure 16. Series Equivalent Source and Load Impedance
Z
o
= 10
Z
load
Z
source
895
910
2.26 - j5.39
2.42 - j6.20
7.60 - j0.98
8.06 - j0.45
f = 910 MHz
f = 850 MHz
f = 850 MHz
f = 910 MHz
10
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
NOTES
MRF6P9220HR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 375G-04
ISSUE G
NI-860C3
1
2
3
4
5
D
Q
G
L
K
2X
H
E
F
C
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
4X
B
A
T
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
1.335
1.345
33.91
34.16
INCHES
B
0.380
0.390
9.65
9.91
C
0.180
0.224
4.57
5.69
D
0.325
0.335
8.26
8.51
E
0.060
0.070
1.52
1.78
F
0.004
0.006
0.10
0.15
G
H
0.097
0.107
2.46
2.72
K
0.135
0.165
3.43
4.19
L
N
0.851
0.869
21.62
22.07
Q
0.118
0.138
3.00
3.30
R
0.395
0.405
10.03
10.29
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
1.100 BSC
0.425 BSC
27.94 BSC
10.8 BSC
J
0.2125 BSC
5.397 BSC
M
0.852
0.868
21.64
22.05
S
0.394
0.406
10.01
10.31
bbb
0.010 REF
0.25 REF
ccc
0.015 REF
0.38 REF
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
(FLANGE)
4X
M
A
M
bbb
B
M
T
M
A
M
ccc
B
M
T
R
(LID)
S
(INSULATOR)
J
M
A
M
bbb
B
M
T
M
A
M
ccc
B
M
T
N
(LID)
M
(INSULATOR)
A
4
12
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
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Document Number: MRF6P9220H
Rev. 1, 11/2005
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
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