AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF6S18060MR1 MRF6S18060MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, Full Frequency Band (1805 -1880 MHz or 1930-1990 MHz)
Power Gain -- 15 dB
Drain Efficiency - 50%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA,
P
out
= 25 Watts Avg., Full Frequency Band (1805 -1880 MHz or
1930 -1990 MHz)
Power Gain -- 15.5 dB
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM -- 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
216
1.2
W
W/C
Storage Temperature Range
T
stg
- 65 to +175
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 60 W CW
Case Temperature 77C, 25 W CW
R
JC
0.81
0.95
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S18060
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
MRF6S18060MR1
MRF6S18060MBR1
1800 -2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S18060MR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S18060MBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
2
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
C
Table 5. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
--
0.24
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W, f = 1930 MHz, f = 1990 MHz
Power Gain
G
ps
14
15
17
dB
Drain Efficiency
D
48
50
--
%
Input Return Loss
IRL
--
-12
-9
dB
P
out
@ 1 dB Compression Point
P1dB
60
65
--
W
1. Part is internally matched both on input and output.
(continued)
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 hm system) V
DD
= 26 Vdc, I
DQ
= 450 mA,
P
out
= 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
G
ps
--
15.5
--
dB
Drain Efficiency
D
--
32
--
%
Error Vector Magnitude
EVM
--
2
--
% rms
Spectral Regrowth at 400 kHz Offset
SR1
--
-62
--
dBc
Spectral Regrowth at 600 kHz Offset
SR2
--
-76
--
dBc
Typical CW Performances (In Freescale Broadband Test Fixture, 50 hm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W,
1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
G
ps
--
15
--
dB
Drain Efficiency
D
--
50
--
%
Input Return Loss
IRL
--
-12
--
dB
P
out
@ 1 dB Compression Point, CW
P1dB
--
65
--
W
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
4
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Z1
0.250 x 0.083 Microstrip
Z2*
0.950 x 0.083 Microstrip
Z3*
0.250 x 0.083 Microstrip
Z4*
0.315 x 0.083 Microstrip
Z5
0.365 x 1.000 Microstrip
Z6
0.680 x 0.080 Microstrip
Z7, Z8
0.115 x 1.000 Microstrip
Z9
0.485 x 1.000 Microstrip
Z10*
0.500 x 0.083 Microstrip
Z11*
0.895 x 0.083 Microstrip
Z12
0.250 x 0.083 Microstrip
Z13
0.200 x 0.080 Microstrip
PCB
Taconic TLX8-0300, 0.030,
r
= 2.55
* Variable for tuning
Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic -- 1900 MHz
V
BIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
C11
C9
+
Z2
R1
C10
V
SUPPLY
R2
C5
C6
Z8
C2
Z4
Z5
Z7
Z6
Z12
Z13
C7
C8
Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values -- 1900 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C5
1.5 pF 100B Chip Capacitor
100B1R5BW
ATC
C6
1.8 pF 100B Chip Capacitor
100B1R8BW
ATC
C7, C8
1 pF 100B Chip Capacitors
100B1R0BW
ATC
C9, C10
10 F Chip Capacitors (2220)
C5750X5R1H106MT
TDK
C11
220 F, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistor (1206)
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout -- 1900 MHz
MRF6S18060N/NB
V
GS
V
DS
R1
R2
C1
R3
C5
C3
C6
C9
C10
C8
C4
C7
CUT
OUT
AREA
C11
C2
Rev. 0
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS
--
1900 MHz
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
1900
47
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
18
57
55
53
51
49
2020
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 60 Watts
-20
0
-5
-10
-15
-25
D
, DRAIN EFFICIENCY (%)
17
16
15
14
D
1920
1940
1960
1980
2000
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
1900
32
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
18
42
40
38
36
2020
IRL
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 30 Watts
-20
0
-5
-10
-15
-25
D
, DRAIN EFFICIENCY (%)
17
16
15
14
D
1920
1940
1960
1980
2000
Figure 5. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
V
DD
= 26 Vdc
f = 1960 MHz
750 mA
I
DQ
= 900 mA
10
12
1
17
15
14
13
100
G
ps
, POWER GAIN (dB)
16
600 mA
450 mA
300 mA
40
12
0
17
16
15
14
13
20
100
60
80
Figure 6. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 32 V
26
V
I
DQ
= 600 mA
f = 1960 MHz
G
ps
, POWER GAIN (dB)
24
V
20
V
16
V
12
V
34
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
--
1900 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. Error Vector Magnitude versus
Frequency
100
10
17
1
0
70
V
DD
= 26 Vdc
I
DQ
= 600 mA
f = 1960 MHz
T
C
= -30
_C
-30
_C
25
_C
85
_C
10
16
15
14
13
12
11
60
50
40
30
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
-55
-60
-65
-70
-75
1920
-80
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
P
out
= 35 W Avg.
25 W Avg.
10 W Avg.
V
DD
= 26 Vdc
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) AVG.
100
4
12
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
8
6
0
10
1
2
20
60
40
30
0
10
T
C
= -30
_C, 25_C
85
_C
G
ps
T
C
= -30
_C
25
_C
85
_C
-75
-45
0
P
out
, OUTPUT POWER (WATTS) AVG.
-50
-55
-60
-65
-70
10
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
D
, DRAIN EFFICIENCY (%)
D
D
, DRAIN EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
EVM,
ERROR VECT
OR MAGNITUDE (% rms)
2020
1
4
1900
3
2.5
1.5
1980
1960
1940
1920
3.5
2
EVM,
ERROR
VECT
OR MAGNITUDE (% rms)
SPECTRAL
REGROWTH @ 400 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
25
_C
85
_C
2000
10
50
EVM
-30
_C
25
_C
85
_C
1940
1960
1980
2000
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
P
out
= 35 W Avg.
25 W Avg.
10 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
f, FREQUENCY (MHz)
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
T
C
= 85
_C
25
_C
-30
_C
-85
-55
0
P
out
, OUTPUT POWER (WATTS) AVG.
-60
-70
-75
-80
10
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH @ 600 kHz (dBc)
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1960 MHz
-65
SR 400 kHz
SR 600 kHz
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
8
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS
210
1.E+09
90
T
J
, JUNCTION TEMPERATURE (
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
100 110 120 130 140 150 160 170 180
1.E+08
1.E+06
1.E+07
Figure 13. MTTF Factor versus Junction Temperature
MTTF
F
ACT
OR (HOURS X AMPS
2
)
200
190
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
9
RF Device Data
Freescale Semiconductor
Z
o
= 10
f = 1930 MHz
Z
load
Z
source
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
Figure 14. Series Equivalent Source and Load Impedance -- 1900 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f
MHz
Z
source
Z
load
V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W CW
1930
8.00 - j6.48
2.83 - j5.13
7.57 - j6.82
2.63 - j4.84
1960
1990
7.06 - j7.06
2.44 - j4.54
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
10
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Z1
0.250 x 0.083 Microstrip
Z2*
0.320 x 0.083 Microstrip
Z3*
0.660 x 0.083 Microstrip
Z4*
0.535 x 0.083 Microstrip
Z5
0.365 x 1.000 Microstrip
Z6
0.860 x 0.080 Microstrip
Z7, Z8
0.115 x 1.000 Microstrip
Z9
0.485 x 1.000 Microstrip
Z10*
0.420 x 0.083 Microstrip
Z11*
0.230 x 0.083 Microstrip
Z12*
0.745 x 0.083 Microstrip
Z13
0.250 x 0.083 Microstrip
Z14
0.640 x 0.080 Microstrip
PCB
Taconic TLX8-0300, 0.030,
r
= 2.55
* Variable for tuning
Figure 15. MRF6S18060MR1(MBR1) Test Circuit Schematic -- 1800 MHz
V
BIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
C12
C10
+
Z2
R1
C11
V
SUPPLY
R2
C5
C7
Z8
C2
Z4
Z5
Z7
Z6
Z13
Z14
C8
C6
C9
Z12
Table 7. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values -- 1800 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C5
0.8 pF 600B Chip Capacitor
600B0R8BW
ATC
C6, C9
0.5 pF 600B Chip Capacitors
600B0R5BW
ATC
C7
2.2 pF 200B Chip Capacitor
200B2R2BW
ATC
C8
1.5 pF 600B Chip Capacitor
600B1R5BW
ATC
C10, C11
10 F Chip Capacitors (2220)
C5750X5R1H106MT
TDK
C12
220 F, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistor (1206)
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
11
RF Device Data
Freescale Semiconductor
Figure 16. MRF6S18060MR1(MBR1) Test Circuit Component Layout -- 1800 MHz
CUT
OUT
AREA
R1
R2
C1
C6
R3
C3
C5
C7
C2
C12
C10
C11
C8
C9
C4
MRF6S18060N/NB
Rev. 0
V
GS
V
DS
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
12
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS -- 1800 MHz
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
12
47
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
17
57
55
53
51
49
1920
IRL
Figure 17. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 60 Watts
-16
0
-4
-8
-12
-20
D
, DRAIN EFFICIENCY (%)
16
15
14
13
D
1780
1800
1820
1840
1860
1880
1900
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
12
1760
33
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
17
43
41
39
37
35
1920
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 30 Watts
-16
0
-4
-8
-12
-20
D
, DRAIN EFFICIENCY (%)
16
15
14
13
D
1780
1800
1820
1840
1860
1880
1900
Figure 19. Error Vector Magnitude versus
Frequency
f, FREQUENCY (MHz)
P
out
= 35 W Avg.
25 W Avg.
15 W Avg.
V
DD
= 26 Vdc
I
DQ
= 450 mA
EVM,
ERROR VECT
OR MAGNITUDE (% rms)
1920
0.5
4.5
1780
3
2.5
1.5
1860
1840
1820
1800
3.5
2
1880
4
1
1900
Figure 20. Error Vector Magnitude and Drain
Efficiency versus Output Power
P
out
, OUTPUT POWER (WATTS) AVG.
100
4
10
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
8
6
0
10
1
2
20
50
40
30
0
10
T
C
= 25
_C
D
D
, DRAIN EFFICIENCY (%)
EVM,
ERROR VECT
OR MAGNITUDE (% rms)
EVM
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
MRF6S18060MR1 MRF6S18060MBR1
13
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1800 MHz
-50
-60
-65
-70
-75
1780
-80
Figure 21. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH @ 400 kHz AND 600 kHz (dBc)
1800
1820
1840
1860
V
DD
= 26 Vdc
I
DQ
= 450 mA
P
out
= 35 W Avg.
25 W Avg.
15 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
SR 400 kHz
SR 600 kHz
-55
1880
1900
1920
T
C
= 25
_C
-75
-45
0
P
out
, OUTPUT POWER (WATTS) AVG.
-50
-55
-60
-65
-70
10
Figure 22. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH @ 400 kHz (dBc)
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
T
C
= 25
_C
-85
-60
0
P
out
, OUTPUT POWER (WATTS) AVG.
-70
-75
-80
10
Figure 23. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH @ 600 kHz (dBc)
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
-65
f, FREQUENCY (MHz)
AR
C
HIVE INF
O
RMA
TI
O
N
ARCHIVE INFORMA
TION
14
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Figure 24. Series Equivalent Source and Load Impedance -- 1800 MHz
f
MHz
Z
source
Z
load
1805
1840
4.16 - j7.56
3.56 - j7.21
3.89 - j7.40
3.29 - j4.91
3.10 - j4.69
2.88 - j4.45
V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 65 W CW
1880
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
o
= 10
f = 1880 MHz
Z
load
Z
source
f = 1805 MHz
f = 1880 MHz
f = 1805 MHz
MRF6S18060MR1 MRF6S18060MBR1
15
RF Device Data
Freescale Semiconductor
NOTES
16
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
TO-270 WB-4
PLASTIC
MRF6S18060MR1
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
H
DRAIN LEAD
D
A
M
aaa
C
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DATUM PLANE -H- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS
"D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
"D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.
5. DIMENSION
"b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE
"b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE
"J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.712
.720
18.08
18.29
D1
.688
.692
17.48
17.58
D2
.011
.019
0.28
0.48
D3
.600
- - -
15.24
- - -
E
.551
.559
14
14.2
E1
.353
.357
8.97
9.07
E2
.132
.140
3.35
3.56
E3
.124
.132
3.15
3.35
E4
.270
- - -
6.86
- - -
F
b1
.164
.170
4.17
4.32
c1
.007
.011
0.18
0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004
0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
E5
.346
.350
8.79
8.89
MRF6S18060MR1 MRF6S18060MBR1
17
RF Device Data
Freescale Semiconductor
18
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
MRF6S18060MR1 MRF6S18060MBR1
19
RF Device Data
Freescale Semiconductor
20
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. "Typical" parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including "Typicals", must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6S18060
Rev. 2, 5/2006
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
PDF 
ZIP