MRF6S19100HR3 MRF6S19100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 22 Watts Avg., Full Frequency Band, IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 16.1 dB
Drain Efficiency -- 28%
IM3 @ 2.5 MHz Offset -- -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset -- -51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Input and Output Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
398
2.3
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
100
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 100 W CW
Case Temperature 77C, 22 W CW
R
JC
0.44
0.50
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S19100H
Rev. 3, 8/2005
Freescale Semiconductor
Technical Data
MRF6S19100HR3
MRF6S19100HSR3
1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF6S19100HSR3
CASE 465-06, STYLE 1
NI-780
MRF6S19100HR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3A (Minimum)
Machine Model (per EIA/JESD22-A115)
B (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 900 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
0.1
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
15
16.1
18
dB
Drain Efficiency
D
26
28
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-51
-48
dBc
Input Return Loss
IRL
--
-15
-9
dB
1. Part is internally matched both on input and output.
MRF6S19100HR3 MRF6S19100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Z7
0.091 x 0.900 Microstrip
Z8
0.493 x 0.900 Microstrip
Z9
0.440 x 0.195 Microstrip
Z10
0.470 x 0.084 Microstrip
Z11
0.735 x 0.084 Microstrip
PCB
Arlon GX-0300-55-22, 0.030,
r
= 2.55
Z1
0.130 x 0.084 Microstrip
Z2
0.360 x 0.084 Microstrip
Z3
0.260 x 0.084 Microstrip
Z4
0.950 x 0.084 Microstrip
Z5
0.457 x 0.940 Microstrip
Z6
0.083 x 0.940 Microstrip
C5
R2
V
BIAS
C4
+
R1
RF
INPUT
DUT
Z1
Z2
Z3
Z4
Z5
Z6
C1
C2
C3
Z7
Z8
Z9
Z10
Z11
RF
OUTPUT
C6
C7
V
SUPPLY
C8
+
C9
+
C10
+
C11
C12
+
B1
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Bead
2743019447
Fair-Rite
C1, C2
0.6-4.5 pF Variable Capacitors, Gigatronics
27271SL
Johanson Dielectrics
C3
15 pF Chip Capacitor
100B150CP500X
ATC
C4, C7
5.6 pF Chip Capacitors
100B5R6JP500X
Kemet
C5
1 F, 50 V Tantalum Chip Capacitor
T491C105K050AS
Kemet
C6
43 pF Chip Capacitor
100B430CP500X
ATC
C8, C10
22 F, 35 V Tantalum Chip Capacitors
T491X226K035AS
Kemet
C9
10 F, 35 V Tantalum Chip Capacitor
T491C106K035AS
Kemet
C11
0.1 F Chip Capacitor (1825)
C1825C14J5RAC
Kemet
C12
100 F, 50 V Electrolytic Capacitor, Radial
MCR50V107M8X11
Multicomp
R1
12 , 1/4 W Chip Resistor (1206)
CRCW120612R0F100
Vishay
R2
2 kW, 1/4 W Chip Resistor (1206)
CRCW12062001F100
Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
V
DD
V
GG
B1
R1
R2
C5
C4
C1
C2
C3
C7
C8 C9
C11
C10
C12
C6
CUT
OUT
AREA
MRF6S19100H/HS
Rev 2
-
+
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF6S19100HR3 MRF6S19100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-20
-5
-10
-15
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
1990
1930
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ P
out
= 22 Watts Avg.
-20
-5
-10
-15
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 900 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
1970
1960
1940
15.4
16.6
-53
29
27
25
-35
-41
-47
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ P
out
= 44 Watts Avg.
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 900 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
14.8
16.2
16
-45
42
40
38
-25
-30
-35
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
13
18
1
I
DQ
= 1300 mA
1125 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
17
16
15
10
300
-30
-15
1
I
DQ
= 450 mA
900 mA
100
-20
-25
300
-55
-50
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
10
1990
1930
1970
1960
1940
D
, DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
G
ps
, POWER GAIN (dB)
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
16.4
16.2
16
15.8
15.6
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
15.8
15.6
15.4
15.2
15
1950
1980
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14
900 mA
675 mA
450 mA
1300 mA
1125 mA
-35
-40
-45
675 mA
-40
D
6
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 900 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
5th Order
3rd Order
-10
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-70
P
out
, OUTPUT POWER (WATTS) AVG.
60
-10
50
-20
40
-30
30
-40
10
-60
10
100
-50
20
V
DD
= 28 Vdc, I
DQ
= 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
40
56
31
P3dB = 51.56 dBm (143.2 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 1960 MHz
54
53
52
46
32
33
36
37
Actual
Ideal
P1dB = 50.9 dBm (124.2 W)
55
48
30
10
17
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 900 mA
f = 1960 MHz
100
10
16
15
13
12
11
60
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 32 V
IM3
D
G
ps
ACPR
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
IM3 (dBc), ACPR (dBc)
D
,
DRAIN
EFFICIENCY (%)
G
ps
D
G
ps
, POWER GAIN (dB)
200
6
18
0
16.5
10.5
9
25
12
15
28 V
I
DQ
= 900 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
-20
51
24 V
20 V
16 V
50
47
49
34
35
38
39
14
50
13.5
7.5
50
75
100
125
150
175
12 V
4
200
3
200
MRF6S19100HR3 MRF6S19100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
9
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
110
130
150
170
190
MTTF
F
ACT
OR (HOURS X AMPS
2
)
90
100
120
140
160
180
200
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @
2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
f, FREQUENCY (MHz)
-100
0
Figure 14. 2-Carrier N-CDMA Spectrum
-10
-20
-30
-40
-50
-60
-70
-80
-90
-ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
-IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
-1.5
-3
-4.5
-6
-7.5
7.5
(dB)
8
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
1930
1960
1990
2.26 - j2.31
2.14 - j2.00
2.22 - j2.13
1.57 - j3.50
1.83 - j3.29
2.34 - j3.71
V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 22 W Avg.
Z
o
= 5
Z
load
Z
source
f = 1930 MHz
f = 1990 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1930 MHz
f = 1990 MHz
MRF6S19100HR3 MRF6S19100HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
NOTES
MRF6S19100HR3 MRF6S19100HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE G
NI-780
MRF6S19100HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE H
NI-780S
MRF6S19100HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
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USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6S19100H
Rev. 3, 8/2005
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
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