MRF6S19140HR3 MRF6S19140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1150 mA,
P
out
= 29 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8
dB @ 0.01% Probability on CCDF.
Power Gain -- 16 dB
Drain Efficiency -- 27.5%
IM3 @ 2.5 MHz Offset -- -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset -- -51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
530
3
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
140
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 140 W CW
Case Temperature 77C, 29 W CW
R
JC
0.33
0.38
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S19140H
Rev. 2, 7/2005
Freescale Semiconductor
Technical Data
MRF6S19140HR3
MRF6S19140HSR3
1990 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S19140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S19140HR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1150 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
7.2
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1150 mA, P
out
= 29 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
15
16
18
dB
Drain Efficiency
D
26
27.5
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-51
-48
dBc
Input Return Loss
IRL
--
-15
-9
dB
1. Part is internally matched both on input and output.
MRF6S19140HR3 MRF6S19140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Z7
0.115 x 0.569 Microstrip
Z8
0.191 x 0.289 Microstrip
Z9
0.681 x 0.081 Microstrip
Z10
1.140 x 0.081 Microstrip
PCB
Arlon GX0300-55-22, 0.030,
r
= 2.5
Z1
0.864 x 0.082 Microstrip
Z2
1.373 x 0.082 Microstrip
Z3
0.282 x 0.900 Microstrip
Z4
0.103 x 0.900 Microstrip
Z5
0.094 x 1.055 Microstrip
Z6
0.399 x 1.055 Microstrip
RF
INPUT
RF
OUTPUT
C7
DUT
Z1
C1
R3
R1
V
BIAS
R5
B1
C13
+
C3
Z2
Z3
V
BIAS
C8
R4
R2
R6
B2
C14
+
C4
Z4
Z5
Z6
Z7
C5
C9
C11
C15
+
V
SUPPLY
Z8
Z9
C2
Z10
V
SUPPLY
C6
C10
C12
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair-Rite
C1, C2
39 pF Chip Capacitors
100B390JP500X
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
100B9R1CP500X
ATC
C7, C8, C9, C10, C11, C12
10 F, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C13, C14
47 F, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
Nippon
C15
470 F, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi-Co
R1, R2
560 k, 1/8 W Chip Resistors (1206)
Dale/Vishay
R3, R4
1.0 k, 1/8 W Chip Resistors (1206)
Dale/Vishay
R5, R6
12 , 1/8 W Chip Resistors (1206)
Dale/Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
C13
R1
C7
C1
C3
R5
B1
R3
R2
C8
C14
R4
B2
R6
C4
C5
C9 C11
C15
C2
C6
C10 C12
6S19140
CUT
OUT
AREA
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Motorola, Inc.
2002 DS1464
MRF6S19140HR3 MRF6S19140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-10
-28
-12
-14
-16
-18
-20
-22
-24
-26
-30
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
2000
1910
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ P
out
= 29 Watts Avg.
-10
-28
V
DD
= 28 Vdc, P
out
= 29 W (Avg.), I
DQ
= 1150 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1970
1950
1930
0
20
18
16
14
12
8
6
4
-100
40
30
20
10
-10
-20
-40
-60
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ P
out
= 75 Watts Avg.
2
18
16
12
10
8
6
4
-80
50
30
20
0
-20
-40
-60
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
18
1
I
DQ
= 1700 mA
1500 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
900 mA
16
15
13
10
400
-10
1
100
-20
-30
-40
1000
-60
-50
10
D
, DRAIN
EFFICIENCY (%)
D
D
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
10
2
1920
1940
1960
1980
1990
0
-80
-12
-14
-16
-18
-20
-22
-24
-26
-30
14
2000
1910
1970
1950
1930
1920
1940
1960
1980 1990
40
V
DD
= 28 Vdc, P
out
= 75 W (Avg.), I
DQ
= 1150 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
17
14
1150 mA
600 mA
I
DQ
= 1700 mA
1500 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
900 mA
1150 mA
600 mA
6
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1150 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
5th Order
3rd Order
-10
-20
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-70
P
out
, OUTPUT POWER (WATTS) AVG.
50
-20
40
-30
30
-40
-50
10
-60
1
10
100
20
V
DD
= 28 Vdc, I
DQ
= 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
T
C
= 25
C
42
58
31
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1150 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
56
54
52
50
46
32
34
33
36
35
39
37
Actual
Ideal
P1dB = 52.3 dBm (171 W)
57
55
51
53
49
38
40
41
28
100
10
17
1
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc, I
DQ
= 1150 mA
f = 1960 MHz, T
C
= 25
C
10
16
15
14
13
12
11
60
50
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 32 V
IM3
G
ps
ACPR
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
IM3 (dBc), ACPR (dBc)
D
,
DRAIN
EFFICIENCY (%)
G
ps
D
G
ps
, POWER GAIN (dB)
250
8
18
0
200
50
17
13
12
11
10
9
100
150
15
14
16
28 V
I
DQ
= 1150 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, P
O
WER
G
AIN
(
dB
)
48
47
30
29
P3dB = 53.1 dBm (204 W)
D
300
24 V
20 V
16 V
12 V
MRF6S19140HR3 MRF6S19140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
9
10
8
10
7
110
130
150
170
190
MTTF
F
ACT
OR (HOURS X AMPS
2
)
100
120
140
160
180
200
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
f, FREQUENCY (MHz)
-100
0
Figure 14. 2-Carrier N-CDMA Spectrum
-10
-20
-30
-40
-50
-60
-70
-80
-90
-ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
-IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
-1.5
-3
-4.5
-6
-7.5
7.5
(dB)
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @
2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
8
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
1900
1930
1960
1.13 - j0.67
1.07 - j0.46
1.11 - j0.60
2.27 - j3.95
2.00 - j4.24
1.72 - j3.96
V
DD
= 28 Vdc, I
DQ
= 1150 mA, P
out
= 29 W Avg.
Z
o
= 5
Z
load
f = 1900 MHz
f = 2020 MHz
Z
source
1990
2020
1.01 - j0.17
1.06 - j0.30
1.80 - j3.51
1.69 - j3.17
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1900 MHz
f = 2020 MHz
MRF6S19140HR3 MRF6S19140HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
NOTES
MRF6S19140HR3 MRF6S19140HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE D
NI-880
MRF6S19140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.175
0.205
4.44
5.21
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
4
CASE 465C-02
ISSUE D
NI-880S
MRF6S19140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
12
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
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Document Number: MRF6S19140H
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