MRF6S21050LR3 MRF6S21050LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 450 mA,
P
out
= 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 16 dB
Drain Efficiency -- 27.7%
IM3 @ 10 MHz Offset -- -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
151
0.86
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
50
W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF6S21050L
Rev. 0, 3/2005
Freescale Semiconductor
Technical Data
MRF6S21050LR3
MRF6S21050LSR3
2170 MHz, 11.5 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465F-04, STYLE 1
NI-400S
MRF6S21050LSR3
CASE 465E-04, STYLE 1
NI-400
MRF6S21050LR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 50 W CW
Case Temperature 76C, 12 W CW
R
JC
1.16
1.28
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 450 mAdc)
V
GS(Q)
2
2.9
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1.1 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(3)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
0.75
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 450 mA, P
out
= 11.5 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
15
16
18
dB
Drain Efficiency
D
26
27.7
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-40
-38
dBc
Input Return Loss
IRL
--
-15
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic
Z6
0.113 x 0.590 Microstrip
Z7
0.325 x 0.590 Microstrip
Z8
0.214 x 0.150 Microstrip
Z9
0.723 x 0.084 Microstrip
PCB
Arlon GX-0300-5022, 0.030,
r
= 2.5
Z1, Z10
0.750 x 0.084 Microstrip
Z2
0.905 x 0.084 Microstrip
Z3
0.435 x 0.173 Microstrip
Z4
0.073 x 0.333 Microstrip
Z5
0.070 x 0.333 Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
B1
C7
+
C6
+
C5
C4
C3
C14
+
C13
+
C12
+
C8
C9
C10
C11
R1
Z1
Z2
Z3
Z4
C1
Z7
Z8
Z9
C2
Z10
Z6
Z5
Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Bead, Surface Mount
2743019447
Fair-Rite
C1, C2, C3, C8
6.8 pF Chip Capacitors
100B6R8CP500X
ATC
C4
0.01 F Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C5, C11
2.2 F, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6
22 F, 25 V Tantalum Capacitor
ECS-T1ED226R
Panasonic TE Series
C7
47 F, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
C9, C10
10 F, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C12
47 F, 50 V Electrolytic Capacitor
MVK50VC47RM8X10TP
Nippon
C13, C14
220 F, 50 V Electrolytic Capacitors
MVY50VC221MJ10TP
Nippon
R1
3.3 W, 1/4 W Chip Resistor (1210)
ERJ-14YJ3R3U
Dale/Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout
CUT
OUT
AREA
B1
C7
C6
R1
C3
C1
C4, C5*
C8
C10
C11
C12
C13
C14
C9
C2
MRF6S21050L Rev. 1
* C4 on bottom, C5 on top.
MRF6S21050LR3 MRF6S21050LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-60
-10
-20
-40
-50
2200
2100
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 11.5 Watts
2190
2160
2150
2140
2130
2120
2110
15.4
16.4
-42
30
28
26
24
22
-34
-36
-40
D
, DRAIN
EFFICIENCY (%)
D
16.3
16.2
16.1
16
15.9
15.8
15.7
15.6
15.5
2170 2180
-38
-32
-30
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-35
-10
-15
-25
-30
2200
2100
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 23 Watts
2190
2160
2150
2140
2130
2120
2110
15
16
-34
41
40
39
38
37
-26
-28
-32
D
, DRAIN
EFFICIENCY (%)
D
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
15.1
2170 2180
-30
-24
-20
Figure 5. Two-Tone Power Gain versus
Output Power
10
13.5
17.5
0.1
I
DQ
= 675 mA
560 mA
P
out
, OUTPUT POWER (WATTS) PEP
1
100
G
ps
, POWER GAIN (dB)
17
16.5
16
15.5
15
14.5
14
450 mA
335 mA
225 mA
V
DD
= 28 Vdc, f1 = 2135 MHz
f2 = 2145
MHz, Two-Tone
Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-10
0.1
10
-20
-30
-40
100
-60
-50
1
P
out
, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION DIST
O
R
T
ION (dBc)
IMD, THIRD ORDER
I
DQ
= 225 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
675 mA
450 mA
560 mA
335 mA
V
DD
= 28 Vdc, P
out
= 11.5 W (Avg.)
I
DQ
= 450 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
V
DD
= 28 Vdc, P
out
= 23 W (Avg.)
I
DQ
= 450 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
6
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
TYPICAL CHARACTERISTICS
100
13
16.5
3
8
64
P
out
, OUTPUT POWER (WATTS) CW
10
16
15
14
56
48
40
32
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15.5
14.5
13.5
V
DD
= 28 Vdc
I
DQ
= 450 mA
f = 2140 MHz
D
G
ps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-10
0.01
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 60 W (PEP), I
DQ
= 450 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
-60
P
out
, OUTPUT POWER (WATTS) AVG. W-CDMA
40
-20
25
-30
20
-35
15
-40
5
-50
0.2
10
30
-45
10
36
52
P3dB = 48.66 dBm (73.43 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 450 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
50
48
46
44
30
29
32
31
35
Actual
Ideal
P1dB = 47.89 dBm (61.52 W)
51
49
45
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
IM3
G
ps
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
V
DD
= 12 V
16
V
100
12
17
0
90
10
14
13
20
30
15
14.5
16
I
DQ
= 450 mA
f = 2140 MHz
30
-55
D
ACPR
20
V
24
V
28
V
32
V
0.1
33
34
35
1
-25
16.5
15.5
13.5
12.5
40
50
60
70
80
V
DD
= 28 Vdc, I
DQ
= 450 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
16
24
MRF6S21050LR3 MRF6S21050LSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
9
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
120
140
160
180 190
MTTF
F
ACT
OR (HOURS x AMPS
2
)
100
110
130
150
170
200
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
PROBABILITY
(%)
W-CDMA. 3.84 MHz Channel Bandwidth @ +5 MHz
Offset. IM3 Measured in 3.84 MHz Bandwidth @
+10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability
on CCDF
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
5
15
10
0
-5
-10
-15
-20
-25
25
-30
W-CDMA TEST SIGNAL
8
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2080
2090
2100
2.36 - j7.52
2.40 - j6.78
2.25 - j7.11
4.09 - j14.65
3.74 - j13.95
3.95 - j13.36
V
DD
= 28 Vdc, I
DQ
= 450 mA,
P
out
= 11.5 W Avg.
2110
2120
2.99 - j6.52
2.68 - j6.59
4.44 - j13.00
5.03 - j12.89
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
2130
3.26 - j6.64
5.55 - j13.05
2140
3.32 - j6.68
5.76 - j13.26
2150
3.20 - j6.87
5.57 - j13.70
2160
2.82 - j6.93
4.86 - j13.92
2170
2.44 - j6.70
4.04 - j13.61
2180
2.33 - j6.29
3.69 - j12.91
2190
2.49 - j6.05
3.91 - j12.44
2200
2.77 - j5.96
4.41 - j12.32
f = 2200 MHz
f = 2080 MHz
Z
source
f = 2200 MHz
f = 2080 MHz
Z
load
Z
o
= 25
MRF6S21050LR3 MRF6S21050LSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
NOTES
MRF6S21050LR3 MRF6S21050LSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E-04
ISSUE E
NI-400
MRF6S21050LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060
.005 (1.520.13) RADIUS OR .06.005
(1.52
0.13) x 45 CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb
A
M
T
H
B
B
G
A
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
M
A
M
aaa
B
M
T
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.795
.805
20.19
20.44
INCHES
B
.380
.390
9.65
9.9
C
.125
.163
3.17
4.14
D
.275
.285
6.98
7.24
E
.035
.045
0.89
1.14
F
.004
.006
0.10
0.15
G
H
.057
.067
1.45
1.7
K
.092
.122
2.33
3.1
M
.395
.405
10
10.3
N
.395
.405
10
10.3
Q
.120
.130
3.05
3.3
R
.395
.405
10
10.3
S
.395
.405
10
10.3
aaa
bbb
ccc
.600 BSC
15.24 BSC
.005 BSC
0.127 BSC
.010 BSC
0.254 BSC
.015 BSC
0.381 BSC
SEE NOTE 4
CASE 465F-04
ISSUE C
NI-400S
MRF6S21050LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
E
F
2X K
M
A
M
bbb
B
M
T
A
T
C
H
B
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.395
.405
10.03
10.29
INCHES
B
.395
.405
10.03
10.29
C
.125
.163
3.18
4.14
D
.275
.285
6.98
7.24
E
.035
.045
0.89
1.14
F
.004
.006
0.10
0.15
H
.057
.067
1.45
1.70
K
.092
.122
2.34
3.10
M
.395
.405
10.03
10.29
S
.395
.405
10.03
10.29
aaa
.005 REF
0.127 REF
2X D
M
A
M
ccc
B
M
T
bbb
.010 REF
0.254 REF
ccc
.015 REF
0.38 REF
N
.395
.405
10.03
10.29
R
.395
.405
10.03
10.29
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
N
(LID)
M
(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R
(LID)
S
(INSULATOR)
M
A
M
aaa
B
M
T
12
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. "Typical" parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including "Typicals", must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
MRF6S21050L
Rev. 0, 3/2005
Document Number:
PDF 
ZIP