MRF6S21100HR3 MRF6S21100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 23 Watts Avg., Full Frequency Band, Channel Band-
width = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 15.9 dB
Drain Efficiency -- 27.6%
IM3 @ 10 MHz Offset -- -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -39.5 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
388
2.2
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 100 W CW
Case Temperature 77C, 23 W CW
R
JC
0.45
0.52
C/W
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF6S21100H
Rev. 2, 12/2004
Freescale Semiconductor
Technical Data
MRF6S21100HR3
MRF6S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF6S21100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6S21100HSR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114-G)
3A (Minimum)
Machine Model (per EIA/JESD22-A115-A)
A (Minimum)
Charge Device Model (per JESD22-C101-A)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
15
15.9
17
dB
Drain Efficiency
D
26
27.6
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-39.5
-38
dBc
Input Return Loss
IRL
--
-16
-9
dB
1. Part is internally matched both on input and output.
MRF6S21100HR3 MRF6S21100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
C3
C1
R1
V
BIAS
V
SUPPLY
C14
C12
C11
C13
C8
C6
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z8
Z7
Z9
Z10
Z11
Z12
+
+
+
+
Z7
0.320 x 0.880 Microstrip
Z8
0.120 x 0.820 Microstrip
Z9
0.035 x 0.320 Microstrip
Z10
0.335 x 0.200 Microstrip
Z11
0.650 x 0.084 Microstrip
PCB
Arlon GX-0300-55-22, 0.030,
r
= 2.55
Z1, Z12
1.250 x 0.084 Microstrip
Z2
1.070 x 0.084 Microstrip
Z3
0.330 x 0.800 Microstrip
Z4
0.093 x 0.800 Microstrip
Z5
1.255 x 0.040 Microstrip
Z6
0.160 x 0.880 Microstrip
DUT
C5
C4
C2
+
C10
+
C9
+
C7
B1
R2
Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair-Rite
C1
1.0 F, 50 V Tantalum Capacitor
T491C105M050
Kemet
C2
10 F, 50 V Electrolytic Capacitor
EEV -HB1H100P
Panasonic
C3
1000 pF 100B Chip Capacitor
100B102JCA500X
ATC
C4, C13
0.1 F 100B Chip Capacitors
CDR33BX104AKWS
Kemet
C5
5.1 pF Chip Capacitor
100B5R1JCA500X
ATC
C6, C7
15 pF Chip Capacitors
100B150JCA500X
ATC
C8
6.8 pF Chip Capacitors
100B6R8JCA500X
ATC
C9, C10, C11, C12
22 F, 35 V Tantalum Capacitors
T491X226K035AS4394
Kemet
C14
100 F, 50 V Electrolytic Capacitor
515D107M050BB6A
Vishay/Sprague
R1
1.0 kW, 1/8 W Chip Resistor
R2
10 W, 1/8 W Chip Resistor
4
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout
HV6
CUT
OUT
AREA
R1
C1
B1 R2
C5
C3
C4
C2
C6
C7
C9 C10
C8
C14
V
DD
V
GG
C13
C12
C11
2.1 GHz
NI780
Rev 4
MRF6S21100HR3 MRF6S21100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
D
2200
15
16.2
2080
-44
28
IRL
G
ps
ACPR-L
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
G
ps
, POWER GAIN (dB)
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
-40
-10
-20
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR
(dBc)
-30
D
, DRAIN
EFFICIENCY (%)
16
27
15.8
-36
15.6
-38
15.4
-40
15.2
-42
2100
2120
2140
2160
2180
V
DD
= 28 Vdc
P
out
= 23 W (Avg.)
I
DQ
= 950 mA
2-Carrier W-CDMA
10 MHz Carrier Spacing
D
2200
14.4
15.6
2080
-30
44
IRL
G
ps
ACPR-U
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance
G
ps
, POWER GAIN (dB)
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
-40
-10
-20
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR
(dBc)
-30
D
, DRAIN
EFFICIENCY (%)
15.4
42
15.2
40
15
-24
14.8
-26
14.6
-28
2100
2120
2140
2160
2180
V
DD
= 28 Vdc
P
out
= 55 W (Avg.)
I
DQ
= 950 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
500
13.5
17.5
1
I
DQ
= 1450 mA
1200 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
450 mA
700 mA
950 mA
17
16.5
16
15.5
15
14.5
14
100
10
100
-55
-20
1
I
DQ
= 450 mA
700 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
950 mA
1450 mA
1200 mA
-25
-30
-35
-40
-45
-50
10
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
IM3-U
IM3-L
ACPR-U
ACPR-L
IM3-U
IM3-L
6
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
TYPICAL CHARACTERISTICS
D
,
100
-60
-20
0.1
3rd Order
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION DIST
ORTION
(dBc)
IMD,
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 950 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
7th Order
-25
-30
-35
-40
-45
-50
-55
10
1
42
44
56
28
Actual
P1dB = 50.9 dBm (123 W)
Ideal
P
in
, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 950 mA
Pulse CW, 8
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
P3dB = 51.5 dBm (141 W)
54
52
50
48
46
40
38
36
30
32
34
100
0
50
0.4
-60
-10
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
, DRAIN EFFICIENCY
(%),
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, I
DQ
= 950 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W-CDMA, 10 MHz
@ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc),
ACPR
(dBc)
40
-20
30
-30
20
-40
10
-50
10
1
200
6
18
1
0
60
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
I
DQ
= 950 mA
f = 2140 MHz
16
50
14
40
12
30
10
20
8
10
10
100
180
12
17
0
V
DD
= 12 V
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
I
DQ
= 950 mA, f = 2140 MHz
16 V
20 V
24 V
28 V
32 V
16
15
14
13
20
40
60
80
100
120
140
160
D
, DRAIN EFFICIENCY (%)
D
D
MRF6S21100HR3 MRF6S21100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
W-CDMA TEST SIGNAL
220
10
9
100
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
MTTF
F
ACT
OR
(HOURS
x
AMPS )
2
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
120
140
160
180
200
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
PROBABILITY
(%)
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
-70
-80
-30
+20
-40
-20
-10
-50
-60
0
+30
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
5
15
10
0
-5
-10
-15
-20
-25
25
(dB)
8
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2080
2110
2140
1.83 - j3.0
1.61 - j2.6
1.74 - j2.8
2.44 - j6.3
2.25 - j6.1
2.09 - j5.8
V
DD
= 28
Vdc, I
DQ
= 950 mA,
P
out
= 23 W Avg.
Z
o
= 10
Z
load
f = 2080 MHz
Z
source
2170
2200
1.52 - j2.3
1.59 - j2.5
1.98 - j5.6
1.85 - j5.4
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2200 MHz
f = 2080 MHz
f = 2200 MHz
MRF6S21100HR3 MRF6S21100HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
NOTES
MRF6S21100HR3 MRF6S21100HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE F
NI-780
MRF6S21100HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE F
NI-780S
MRF6S21100HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF6S21100HR3 MRF6S21100HSR3
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ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
MRF6S21100H
Rev. 2, 12/2004
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