MRF6S21100NR1 MRF6S21100NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1050 mA,
P
out
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 14.5 dB
Drain Efficiency -- 25.5%
IM3 @ 10 MHz Offset -- -37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset -- -40 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
307
1.75
W
W/C
Storage Temperature Range
T
stg
- 65 to +175
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 100 W CW
Case Temperature 73C, 23 W CW
R
JC
0.57
0.66
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S21100N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF6S21100NR1
MRF6S21100NBR1
2110-2170 MHz, 23 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S21100NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S21100NBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
C
Table 5. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1050 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
V
DS(on)
--
0.24
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.5
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
13
14.5
16
dB
Drain Efficiency
D
24
25.5
36
%
Intermodulation Distortion)
IM3
-47
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
-50
-40
-38
dBc
Input Return Loss
IRL
--
-12
-10
dB
1. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Z7
0.259 x 0.880 Microstrip
Z8
0.215 x 0.230 Microstrip
Z9
0.787 x 0.084 Microstrip
Z11, Z12
1.171 x 0.120 Microstrip
PCB
Arlon AD250, 0.030,
r
= 2.5
Z1, Z10
0.743 x 0.084 Microstrip
Z2
0.893 x 0.084 Microstrip
Z3
0.175 x 0.084 Microstrip
Z4
0.420 x 0.800 Microstrip
Z5
1.231 x 0.040 Microstrip
Z6
0.100 x 0.880 Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
C6
R1
Z1
Z2
Z3
C7
Z7
C9
Z8
Z6
R2
Z5
Z4
Z9
Z10
Z12
Z11
V
SUPPLY
C10
C11
C12
+
B1
R3
C8
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead (0805)
25008051107Y0
Fair-Rite
C1
10 F, 35 V Tantalum Capacitor
T491D106K035AS
Kemet
C2
0.01 F Chip Capacitor (1825)
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF 600B Chip Capacitors
600B5R1BT250XT
ATC
C5, C6, C11, C12
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF 600B Chip Capacitor
600B100BT250XT
ATC
C8
1.1 pF 600B Chip Capacitor
600B1R1BT250XT
ATC
C9
5.1 pF 600 B Chip Capacitor (MRF6S21100NR1)
8.2 pF 600 B Chip Capacitor (MRF6S21100NBR1)
600B5R1BT250XT
600B8R2BT250XT
ATC
ATC
R1
1 k, 1/4 W Chip Resistor (1206)
R2
10 k, 1/4 W Chip Resistor (1206)
R3
10 , 1/4 W Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout
MRF6S21100N/NB, Rev. 3
CUT
OUT
AREA
C11
R1
C1
C2
C3
R3
B1
R2
C7
C8
C4
C5
C6
C9
C12
C10
MRF6S21100NR1 MRF6S21100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
2240
13
15
2060
- 46
28
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 22.5 Watts Avg.
- 14
- 9
- 10
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR (dBc)
- 13
D
, DRAIN
EFFICIENCY (%)
14.8
27
13.8
- 31
13.6
- 34
13.4
- 40
13.2
- 43
2100
2120
2140
2160
14
14.2
14.4
14.6
26
25
24
- 37
2080
2200
2180
2220
- 11
- 12
V
DD
= 28 Vdc, P
out
= 22.5 W (Avg.), I
DQ
= 1050 mA
2- Carrier W- CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
G
ps
ACPR
IM3
D
2240
12.2
14.2
2060
- 34
38
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 45 Watts Avg.
- 14
- 9
- 10
INPUT
RETURN LOSS (dB)
IRL,
IM3 (dBc),
ACPR (dBc)
- 13
D
, DRAIN
EFFICIENCY (%)
14
37
13
- 24
12.8
- 26
12.6
- 30
12.4
- 32
2100
2120
2140
2160
13.2
13.4
13.6
13.8
36
35
34
- 28
2080
2200
2180
2220
- 11
- 12
V
DD
= 28 Vdc, P
out
= 45 W (Avg.), I
DQ
= 1050 mA
2- Carrier W- CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
ACPR
IM3
D
1000
10
16
0.1
I
DQ
= 1575 mA
1312 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two- Tone Measurements, 10 MHz Tone Spacing
525 mA
787 mA
15
14
13
12
11
100
10
1
1050 mA
100
- 60
- 10
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two- Tone Measurements, 10 MHz Tone Spacing
- 20
- 30
- 40
- 50
10
INTERMODULA
TION DIST
OR
TION (dBc)
IMD, THIRD ORDER
0.1
1
300
I
DQ
= 525 mA
1312 mA
787 mA
1050 mA
1575 mA
G
ps
6
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
TYPICAL CHARACTERISTICS
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
300
- 60
0
0.1
3rd Order
TWO- TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION DIST
OR
TION (dBc)
IMD,
V
DD
= 28 Vdc, P
out
= 100 W (PEP)
I
DQ
= 1050 mA, Two- Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
7th Order
- 20
- 30
- 40
- 50
10
1
46
48
58
32
Actual
P1dB = 51.3 dBm (135.8 W)
Ideal
P
in
, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT
POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1050 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 2140 MHz
P3dB = 51.9 dBm (156.3 W)
56
54
52
50
44
42
40
34
36
38
100
0
40
0.5
- 60
- 20
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
IM3 (dBc),
ACPR (dBc)
30
- 25
20
- 30
10
- 40
5
- 50
10
1
300
11
18
0.1
0
70
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1050 mA
f = 2140 MHz
16
50
15
40
14
30
13
20
12
10
10
100
200
9
15
0
V
DD
= 12 V
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
16 V
20 V
24 V
28 V
32 V
14
12
11
10
20
40
60
80
100
120
140
160
D
, DRAIN EFFICIENCY (%)
D
- 10
100
35
25
15
- 55
- 45
- 35
17
60
1
13
180
T
C
= 25
_C
- 30
_C
85
_C
25
_C
25
_C
85
_C
- 30
_C
- 30
_C
25
_C
V
DD
= 28 Vdc, I
DQ
= 1050 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2- Carrier W- CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
25
_C
- 30
_C
85
_C
D
25
_C
T
C
= - 30
_C
85
_C
I
DQ
= 1050 mA
f = 2140 MHz
MRF6S21100NR1 MRF6S21100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
9
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
120
140
160
180
200
MTTF
F
ACT
OR (HOURS x AMPS
2
)
100
190
170
150
130
110
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK- TO- AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
PROBABILITY
(%)
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
- IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
- ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
- 10
- 40
- 50
- 60
- 70
- 80
- 20
20
5
15
10
0
- 5
- 10
- 15
- 20
- 25
25
- 30
W- CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
8
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2110
2140
2170
3.56 - j3.92
3.34 - j3.90
3.55 - j3.97
1.62 - j3.47
1.53 - j3.19
1.44 - j2.89
V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg.
f
MHz
Z
source
Z
load
2110
2140
2170
3.51 - j3.78
3.29 - j3.78
3.50 - j3.83
1.62 - j3.54
1.51 - j3.26
1.41 - j2.95
V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg.
MRF6S21100NBR1
MRF6S21100NR1
Z
o
= 5
Z
source
Z
load
f = 2110 MHz
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz
Z
o
= 5
Z
load
Z
source
f = 2110 MHz
f = 2170 MHz
MRF6S21100NR1 MRF6S21100NBR1
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
NOTES
MRF6S21100NR1 MRF6S21100NBR1
11
RF Device Data
Freescale Semiconductor
NOTES
12
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
H
DRAIN LEAD
D
A
M
aaa
C
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DATUM PLANE -H- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS
"D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
"D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.
5. DIMENSION
"b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE
"b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE
"J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.712
.720
18.08
18.29
D1
.688
.692
17.48
17.58
D2
.011
.019
0.28
0.48
D3
.600
- - -
15.24
- - -
E
.551
.559
14
14.2
E1
.353
.357
8.97
9.07
E2
.132
.140
3.35
3.56
E3
.124
.132
3.15
3.35
E4
.270
- - -
6.86
- - -
F
b1
.164
.170
4.17
4.32
c1
.007
.011
0.18
0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004
0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
E5
.346
.350
8.79
8.89
TO-270 WB-4
PLASTIC
MRF6S21100NR1
MRF6S21100NR1 MRF6S21100NBR1
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
MRF6S21100NR1 MRF6S21100NBR1
15
RF Device Data
Freescale Semiconductor
16
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
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Technical Information Center
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support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
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Japan
0120 191014 or +81 3 5437 9125
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Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
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For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6S21100N
Rev. 1, 5/2006
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