MRF6S21140HR3 MRF6S21140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1200 mA, P
out
= 30 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 15.5 dB
Drain Efficiency -- 27.5%
IM3 @ 10 MHz Offset -- -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -41 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
500
2.9
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
140
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 140 W CW
Case Temperature 75C, 30 W CW
R
JC
0.35
0.38
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF6S21140H
Rev. 2, 1/2005
Freescale Semiconductor
Technical Data
MRF6S21140HR3
MRF6S21140HSR3
2170 MHz, 30 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S21140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S21140HR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
--
7.2
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 30 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
14.5
15.5
17.5
dB
Drain Efficiency
D
26
27.5
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-41
-38
dBc
Input Return Loss
IRL
--
-15
-9
dB
1. Part is internally matched both on input and output.
MRF6S21140HR3 MRF6S21140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Z8
0.531 x 1.000 Microstrip
Z9
0.308 x 0.083 Microstrip
Z10
0.987 x 0.083 Microstrip
Z11, Z12
0.070 x 0.220 Microstrip
Z13
0.160 x 0.083 Microstrip
PCB
Taconic TLX8-0300, 0.030,
r
= 2.55
Z1
0.250 x 0.083 Microstrip
Z2
1.177 x 0.083 Microstrip
Z3
0.443 x 0.083 Microstrip
Z4
0.276 x 0.787 Microstrip
Z5
0.786 x 0.083 Microstrip
(quarter wave length for bias purpose)
Z6, Z7
0.833 x 0.083 Microstrip
(quarter wave length for supply purpose)
C5
R2
V
BIAS
R1
Z5
C4
C3
R3
RF
INPUT
DUT
Z1
C1
C19
Z2
C2
Z3
Z4
C18
C6
C7
RF
OUTPUT
C10
C12
C13
C16
Z6
V
SUPPLY
Z8
C17
Z9
Z10
Z11
C8
C9
Z12
Z13
Z7
C11
C14
C15
+
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C8, C9, C10, C11
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C2
0.8 pF 100B Chip Capacitor
100B0R8BW
ATC
C4
220 nF Chip Capacitor (1812)
1812Y224KXA
Vishay -Vitramon
C5, C12, C13, C14, C15
10 F Chip Capacitors (2220)
C5750X5R1H106MT
TDK
C6, C19
0.2 pF 100B Chip Capacitors
100B0R2BW
ATC
C7
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C16
220 F, 63 V Electrolytic Capacitor, Radial
13668221
Philips
C17, C18
0.1 pF 100B Chip Capacitors
100B0R1BW
ATC
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout
C16
R2
V
GS
R1
C5
C4
C3
C1
R3
C19
C2
C10
V
DD
C12 C13
C17
C9
C8
C18
C6 C7
C14 C15
C11
CUT
OUT
AREA
MRF6S21140H
Rev 0
MRF6S21140HR3 MRF6S21140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-21
-12
-15
-18
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-21
-12
-15
-18
2220
2060
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 30 Watts Avg.
2200
2180
2160
2140
2120
2100
2080
15.6
15.5
-44
30
28
26
-32
-36
-40
2220
2060
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 60 Watts Avg.
2200
2180
2160
2140
2120
2100
2080
15
14.9
-33
42
40
38
-24
-27
-30
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
1
I
DQ
= 1800 mA
1500 mA
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
10
1000
-55
-25
1
I
DQ
= 600 mA
P
out
, OUTPUT POWER (WATTS) PEP
1800 mA
100
-30
-35
-40
-45
-50
-60
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
D
, DRAIN
EFFICIENCY (%)
D
D
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
15.4
15.3
15.2
15.1
15
V
DD
= 28 Vdc, P
out
= 30 W (Avg.),
I
DQ
= 1200 mA, 2-Carrier W-CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
14.8
14.7
14.6
14.5
14.4
V
DD
= 28 Vdc, P
out
= 60 W (Avg.),
I
DQ
= 1200 mA, 2-Carrier W-CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, Peak/Avg. = 8.5 dB @ 0.01%
Probability (CCDF)
13
1200 mA
900 mA
600 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-20
1500 mA
900 mA
1200 mA
6
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
TYPICAL CHARACTERISTICS
IM3
(dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-10
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 140 W (PEP), I
DQ
= 1200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
-60
P
out
, OUTPUT POWER (WATTS) AVG.
35
-25
25
-30
20
-35
15
-40
5
-50
1
10
100
-45
10
V
DD
= 28 Vdc, I
DQ
= 1200 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth
Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
44
58
P3dB = 52.6 dBm (180 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 5
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
56
54
52
50
48
36
34
40
38
42
Actual
Ideal
P1dB = 52 dBm (158.5 W)
57
55
51
53
49
32
1000
12
18
1
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1200 mA
f = 2140 MHz
T
C
= -30
_C
25
_C
-30
_C
100
10
17
16
15
14
13
50
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
IM3
G
ps
T
C
= - 30
_C
85
_C
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
D
, DRAIN EFFICIENCY (%)
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
, OUTPUT POWER (dBm)
D
G
ps
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
V
DD
= 12 V
16
V
250
9
16
0
200
50
12
11
10
100
150
14
13
15
I
DQ
= 1200 mA
f = 2140 MHz
30
-55
D
25
_C
-30
_C
85
_C
25
_C
-30
_C
-30
_C
25
_C
85
_C
ACPR
25
_C
85
_C
85
_C
25
_C
85
_C
20
V
24
V
28
V
32
V
MRF6S21140HR3 MRF6S21140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
9
10
8
10
7
110
130
150
170
190
MTTF
F
ACT
OR (HOURS x AMPS
2
)
100
120
140
160
180
200
TYPICAL CHARACTERISTICS
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
-ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
PROBABILITY (%)
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
5
15
10
0
-5
-10
-15
-20
-25
25
-30
W-CDMA. 3.84 MHz Channel Bandwidth @ +5 MHz
Offset. IM3 Measured in 3.84 MHz Bandwidth @
+10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF
8
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2080
2110
2140
1.40 - j3.03
1.34 - j2.52
1.37 - j2.78
7.53 - j10.99
7.57 - j10.67
7.58 - j10.23
V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 30 W Avg.
Z
o
= 25
Z
load
*
f = 2200 MHz
f = 2080 MHz
Z
source
2170
2200
1.31 - j2.06
1.32 - j2.28
7.51 - j9.73
7.44 - j9.32
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2200 MHz
f = 2080 MHz
MRF6S21140HR3 MRF6S21140HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
NOTES
MRF6S21140HR3 MRF6S21140HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE B
NI-880
MRF6S21140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
CASE 465C-02
ISSUE A
NI-880S
MRF6S21140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
12
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
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MRF6S21140H
Rev. 2, 1/2005
Document Number:
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