MRF6S23140HR3 MRF6S23140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1300 mA,
P
out
= 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain -- 15.2 dB
Drain Efficiency -- 25%
IM3 @ 10 MHz Offset -- -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset -- -40 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
- 65 to +150
C
Case Operating Temperature
T
C
150
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
R
JC
0.29
0.33
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S23140H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF6S23140HR3
MRF6S23140HSR3
2300 -2400 MHz, 28 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S23140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S23140HR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
500
ndc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 28 W Avg., f1 = 2300 MHz,
f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
13
15.2
17
dB
Drain Efficiency
D
23
25
--
%
Intermodulation Distortion
IM3
--
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
--
-40
-38
dBc
Input Return Loss
IRL
--
-15
--
dB
1. Part internally matched both on input and output.
MRF6S23140HR3 MRF6S23140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic
Z10
0.193 x 1.170 Microstrip
Z11, Z13
0.712 x 0.095 Microstrip
Z12, Z14
0.098 x 0.095 Microstrip
Z15
0.115 x 0.550 Microstrip
Z16
0.250 x 0.110 Microstrip
Z17
0.539 x 0.068 Microstrip
Z18
0.956 x 0.068 Microstrip
PCB
Taconic RF-35, 0.030,
r
= 3.5
Z1
0.678 x 0.068 Microstrip
Z2
0.420 x 0.068 Microstrip
Z3
0.845 x 0.200 Microstrip
Z4
0.175 x 0.530 Microstrip
Z5, Z6
0.025 x 0.530 Microstrip
Z7
0.514 x 0.050 Microstrip
Z8
0.507 x 0.050 Microstrip
Z9
0.097 x 1.170 Microstrip
Z1
RF
INPUT
C1
Z2
Z3
Z4
Z5
Z6
DUT
Z9
C2
RF
OUTPUT
Z10
Z15
Z16
Z17
Z18
C9
B1
V
BIAS
V
SUPPLY
C11
+
C10
C12
+
R1
C3
Z7
Z8
C4
B2
C15
+
C14
C16
+
C13
C21
C22
C7
C23
C24
+
Z11
C6
Z12
C17
C18
C5
C19
C20
+
Z14
C8
Z13
Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair-Rite
C1, C2, C3, C4, C5, C6, C7, C8
5.6 pF 100B Chip Capacitors
100B5R6CP500X
ATC
C9, C13
0.01 F, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C10, C14, C17, C21
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C11, C15
22 F, 25 V Tantalum Chip Capacitors
ECS-T1ED226R
Panasonic TE series
C12, C16
47 F, 16 V Tantalum Chip Capacitors
T491D476K016AS
Kemet
C18, C19, C22, C23
10 F, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C20, C24
330 F, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1
10 , 1/8 W Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout
B1
CUT
OUT
AREA
MRF6S23140H
Rev 3
R1
C12 C11
C9*
C10*
C1
C4
C13*
C14*
C16
B2
C15
C8
C7
C23
C24
C21
C22
C2
C17
C18
C20
C19
C6
C5
* Stacked
C3
MRF6S23140HR3 MRF6S23140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-18
-9
-12
-15
2430
2270
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 28 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.6
15.5
-42
28
27
26
-36
-40
D
, DRAIN
EFFICIENCY (%)
D
15.4
15.3
15.2
15
14.8
14.9
15.1
-38
-34
25
-6
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-18
-9
-12
-15
2430
2270
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 56 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.1
15
-33
38
37
36
-27
-31
D
, DRAIN
EFFICIENCY (%)
D
14.9
14.8
14.7
14.5
14.3
14.4
14.6
-29
-25
35
-6
Figure 5. Two-Tone Power Gain versus
Output Power
100
11
18
1
I
DQ
= 1950 mA
1625 mA
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
10
300
G
ps
, POWER GAIN (dB)
13
1300 mA
975 mA
650 mA
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-50
1
I
DQ
= 650 mA
P
out
, OUTPUT POWER (WATTS) PEP
100
-20
-30
-40
-60
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
-10
1625 mA
975 mA
1300 mA
17
12
300
V
DD
= 28 Vdc
P
out
= 28 W (Avg.)
I
DQ
= 1300 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
V
DD
= 28 Vdc
P
out
= 56 W (Avg.)
I
DQ
= 1300 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
1950 mA
6
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 140 W (PEP)
I
DQ
= 1300 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
100
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 8. Pulse CW Output Power versus
Input Power
43
59
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1300 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 2350 MHz
49
45
33
31
37
35
41
Actual
Ideal
57
55
51
53
47
29
P
out
, OUTPUT POWER (dBm)
IM3 (dBc), ACPR (dBc)
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
-55
P
out
, OUTPUT POWER (WATTS) AVG.
42
-20
30
-25
24
-30
18
-35
6
-45
1
10
100
-40
12
IM3
G
ps
T
C
= - 30
_C
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
36
-50
D
25
_C
-30
_C
85
_C
ACPR
-10
39
P6dB = 53.51 dBm (224.39 W)
P3dB = 53.04 dBm (201.42 W)
P1dB = 52.22 dBm (162.72 W)
0.5
300
25
_C
85
_C
-30
_C
25
_C
-30
_C
85
_C
V
DD
= 28 Vdc, I
DQ
= 1300 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
MRF6S23140HR3 MRF6S23140HSR3
7
RF Device Data
Freescale Semiconductor
300
11
17
0.5
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
V
DD
= 28 Vdc
I
DQ
= 1300 mA
f = 2350 MHz
T
C
= -30
_C
25
_C
-30
_C
100
10
16
15
14
13
12
50
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
D
, DRAIN EFFICIENCY (%)
D
G
ps
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
V
DD
= 12 V
16
V
250
11
16
0
200
50
12
100
150
14
13
15
I
DQ
= 1300 mA
f = 2350 MHz
85
_C
25
_C
85
_C
20
V
24
V
28
V
32
V
210
10
10
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
9
10
8
10
7
110
130
150
170
190
MTTF
F
ACT
OR (HOURS x AMPS
2
)
100
120
140
160
180
200
1
8
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
PROBABILITY
(%)
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
-ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
5
15
10
0
-5
-10
-15
-20
-25
25
-30
MRF6S23140HR3 MRF6S23140HSR3
9
RF Device Data
Freescale Semiconductor
Z
o
= 25
Z
load
f = 2300 MHz
f = 2400 MHz
Z
source
f = 2400 MHz
f = 2300 MHz
V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 28 W Avg.
f
MHz
Z
source
W
Z
load
W
2300
12.92 + j6.65
1.05 - j2.88
2310
13.06 + j6.73
1.04 - j2.82
2320
13.21 + j6.80
1.03 - j2.76
2330
13.37 + j6.87
1.01 - j2.70
2340
13.53 + j6.94
1.00 - j2.64
2350
13.70 + j7.01
0.99 - j2.58
2360
13.88 + j7.08
0.97 - j2.52
2370
14.06 + j7.14
0.96 - j2.46
2380
14.25 + j7.21
0.95 - j2.40
2390
14.45 + j7.27
0.94 - j2.34
2400
14.66 + j7.33
0.93 - j2.28
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance
10
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
NOTES
MRF6S23140HR3 MRF6S23140HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE E
NI-880
MRF6S23140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.175
0.205
4.44
5.21
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
4
CASE 465C-02
ISSUE D
NI-880S
MRF6S23140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
12
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. "Typical" parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including "Typicals", must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6S23140H
Rev. 1, 5/2006
PDF 
ZIP