MRF6S27085HR3 MRF6S27085HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical Single-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
900 mA, P
out
= 20 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 15.5 dB
Drain Efficiency -- 23.5%
ACPR @ 885 kHz Offset -- -48 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
350
2
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
CW
85
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 85 W CW
Case Temperature 76C, 20 W CW
R
JC
0.50
0.56
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S27085H
Rev. 1, 1/2005
Freescale Semiconductor
Technical Data
MRF6S27085HR3
MRF6S27085HSR3
2700 MHz, 20 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF6S27085HSR3
CASE 465-06, STYLE 1
NI-780
MRF6S27085HR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250 Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 900 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
--
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
5.3
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.8
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
=
28 Vdc, I
DQ
= 900 mA, P
out
= 20 W Avg. N-CDMA,
f = 2630 MHz and 2660
MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ 885 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
14
15.5
17
dB
Drain Efficiency
D
22
23.5
--
%
Adjacent Channel Power Ratio
ACPR
--
-48
-45
dBc
Input Return Loss
IRL
--
-13
-9
dB
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Z10
0.287 x 0.753 Microstrip
Z11
0.220 x 0.384 Microstrip
Z12
0.122 x 0.580 Microstrip
Z13
0.266 x 0.148 Microstrip
Z14
0.130 x 0.425 Microstrip
Z15
0.380 x 0.081 Microstrip
Z16
0.703 x 0.081 Microstrip
PCB
Arlon GX-0300-5022, 0.030,
r
= 2.5
Z1
0.672 x 0.081 Microstrip
Z2
0.050 x 0.250 Microstrip
Z3
0.288 x 0.081 Microstrip
Z4
0.200 x 0.480 Microstrip
Z5
0.270 x 0.172 Microstrip
Z6
0.260 x 0.810 Microstrip
Z7
0.366 x 0.490 Microstrip
Z8
0.083 x 0.490 Microstrip
Z9
0.091 x 0.753 Microstrip
RF
INPUT
DUT
C1
Z8
Z7
Z6
Z5
Z4
Z3
Z2
Z1
C3
R1
B2
L1
C8
C9
C10
C11
V
BIAS
B1
Z9
Z10 Z11
Z12 Z13 Z14 Z15
C2
RF
OUTPUT
Z16
C4
C5
C6
+
V
SUPPLY
C7
+
+
+
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Bead (0805)
2508051107Y0
Fair-Rite
B2
Bead, Surface Mount
2743019447
Fair-Rite
C1, C2
4.7 pF Chip Capacitors, B Case
100B4R7CP500X
ATC
C3
3.6 pF Chip Capacitor, B Case
100B3R6CP500X
ATC
C4
10 F, 50 V Chip Capacitor (2220)
GRM55DR61H106KA88B
Murata
C5, C8
2.2 F, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6
47 F, 50 V Electrolytic Capacitor
MVK50VC47RM8X10TP
Nippon
C7
330 F, 63 V Electrolytic Capacitor
NACZF331M63V
Nippon
C9
0.01 F Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C10
22 F, 25 V Tantalum Capacitor
ECS-T1ED226R
Panasonic TE Series
C11
47 F, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
L1
15 nH, Chip Inductor
L0603150GGW
AVX
R1
3.3 W, 1/4 W Chip Resistor (1210)
ERJ-14YJ3R3U
Dale/Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
CUT
OUT
AREA
C11 C10
B2
C8*
C9*
B1* L1*
R1
C3
C1
C4
C5
C7
C6
C2
MRF6S27085
Rev. 3
* Components stacked
MRF6S27085HR3 MRF6S27085HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
2700
2600
IRL
ACPR
ALT1
f, FREQUENCY (MHz)
-10
2660
2640
2620
13.6
15.2
15
14.8
14.6
14.2
14
13.8
-48
38
36
34
-36
-40
-44
D
, DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
14.4
2610
2630
2650
2670 2680
32
-12
-14
-16
-18
-20
-22
-24
-26
2690
-32
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), AL
T1 (dBc)
2700
2600
IRL
ACPR
ALT1
-10
V
DD
= 28 Vdc, P
out
= 20 W (Avg.)
I
DQ
= 900 mA, Single-Carrier N-CDMA
2660
2640
2620
14.6
16.2
-58
25
24
23
-46
-50
-54
100
12
18
1
I
DQ
= 1340 mA
1240 mA
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two-Tone Measurements
2.5 MHz Tone Spacing
900 mA
16
15
13
10
-20
0.1
100
-30
-40
-60
-50
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION
(dBc)
IMD, THIRD ORDER
2610
2630
2650
2670 2680
22
-12
-14
-16
-18
-20
-22
-24
-26
17
14
440 mA
I
DQ
= 440 mA
1340 mA
900 mA
1240 mA
675 mA
2690
-42
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ 20 Watts Avg.
Figure 4. Single-Carrier N-CDMA Broadband Performance @ 45 Watts Avg.
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
G
ps
675 mA
1
10
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two-Tone Measurements
2.5 MHz Tone Spacing
16
15.8
15.6
15.4
15.2
15
14.8
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
D
G
ps
V
DD
= 28 Vdc, P
out
= 45 W (Avg.)
I
DQ
= 900 mA, Single-Carrier N-CDMA
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
6
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
TYPICAL CHARACTERISTICS
-70
-30
-40
-45
-50
-60
-35
-55
-65
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 85 W (PEP), I
DQ
= 900 mA
Two-Tone Measurements, Center Frequency = 2645 MHz
5th Order
3rd Order
-10
-20
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
5
P
out
, OUTPUT POWER (WATTS) AVG. W-CDMA
45
35
30
10
10
100
20
40
56
31
P
in
, INPUT POWER (dBm)
54
52
50
46
32
34
33
36
35
39
37
55
51
53
49
38
30
0
20
5
45
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc, I
DQ
= 900 mA
f = 2645 MHz
10
17.5
15
10
5
2.5
40
30
25
20
15
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 12 V
ACPR
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULA
TION
DIST
ORTION
(dBc)
ACPR (dBc), AL
T1 (dBc)
D
,
DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
11
16
1
100
13
12
10
15
14
I
DQ
= 900 mA
f = 2645 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
48
47
D
100
32 V
Actual
Ideal
P1dB = 51 dBm (126.74 W)
P3dB = 51.72 dBm (148.54 W)
40
25
15
V
DD
= 28 Vdc, I
DQ
= 900 mA, f = 2645 MHz
Single-Carrier N-CDMA, 1.2288 MHz
Channel Bandwidth, Peak/Avg. = 9.8 dB
@ 0.01% Probability (CCDF)
ALT1
12.5
7.5
35
28 V
24 V
20 V
16 V
G
ps
G
ps
V
DD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 2645 MHz
MRF6S27085HR3 MRF6S27085HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
9
90
T
J
, JUNCTION TEMPERATURE (
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
110
130
150
170
190
MTTF
F
ACT
OR (HOURS X AMPS
2
)
100
120
140
160
180
200
Figure 12. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
10
1
0.1
0.01
0.001
2
4
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
PROBABILITY (%)
Figure 13. Single-Carrier CCDF N-CDMA
-60
-110
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR @ 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
-ACPR @ 30 kHz
Integrated BW
8
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
2600
5.86 - j4.34
8.55 - j5.42
V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 20 W Avg.
Z
o
= 10
Z
load
f = 2700 MHz
f = 2600 MHz
Z
source
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2700 MHz
f = 2600 MHz
2610
5.69 - j4.26
8.31 - j5.30
2620
5.64 - j4.15
8.21 - j5.10
2630
5.67 - j4.00
8.21 - j4.85
2640
5.72 - j3.83
8.26 - j4.57
2645
5.80 - j3.75
8.40 - j4.43
2650
5.86 - j3.70
8.44 - j4.32
2660
6.10 - j3.72
8.78 - j4.29
2670
6.19 - j4.00
8.94 - j4.59
2680
6.07 - j4.36
8.88 - j5.01
2690
5.80 - j4.48
8.57 - j5.18
2700
5.71 - j4.47
8.36 - j5.10
MRF6S27085HR3 MRF6S27085HSR3
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
NOTES
MRF6S27085HR3 MRF6S27085HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE F
NI-780
MRF6S27085HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE F
NI-780S
MRF6S27085HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
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Document Number: MRF6S27085H
Rev. 1, 1/2005
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