MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
· Typical Single-Carrier N-CDMA Performance @ 880 MHz, V

= 28 Volts,

= 450 mA, P

out

= 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain -- 21.4 dB

Drain Efficiency -- 32.1%

ACPR @ 750 kHz Offset -- -47.6 dBc @ 30 kHz Bandwidth

GSM EDGE Application
· Typical GSM EDGE Performance: V

= 28 Volts, I

= 500 mA,

out

= 21 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain -- 20 dB

Drain Efficiency -- 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM -- 1.5% rms

GSM

Application

· Typical GSM Performance: V

= 28 Volts, I

= 500 mA, P

out

= 60 Watts,

Full Frequency Band (921-960 MHz)

Power Gain -- 20 dB

Drain Efficiency -- 63%

· Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW

Output Power

· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Integrated ESD Protection
· N Suffix Indicates Lead-Free Terminations
· 200°C Capable Plastic Package
· TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

· TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

- 0.5, +68

Vdc

Gate-Source Voltage

- 0.5, +12

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

227

1.3

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF6S9060

Rev. 1, 6/2005

Freescale Semiconductor

Technical Data

880 MHz, 14 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

BROADBAND RF POWER MOSFETs

MRF6S9060NR1

MRF6S9060NBR1

MRF6S9060MR1

MRF6S9060MBR1

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF6S9060NR1(MR1)

CASE 1337-03, STYLE 1

TO-272-2

PLASTIC

MRF6S9060NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 60 W CW

Case Temperature 80°C,

14 W CW

0.77
0.88

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 200 µA)

GS(th)

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 450 mAdc)

GS(Q)

2.9

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 1.5 Adc)

DS(on)

0.18

0.4

Vdc

Forward Transconductance

= 10 Vdc, I

= 3 Adc)

4.2

Dynamic Characteristics

Input Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

iss

106

Output Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

1.4

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 450 mA, P

out

= 14 W Avg., f = 880 MHz, Single-Carrier

N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF

Power Gain

20.5

21.4

23.5

Drain Efficiency

30.5

32.1

Adjacent Channel Power Ratio

ACPR

-47.6

-45

dBc

Input Return Loss

IRL

-15.3

-9

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

(continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 hm system)

= 28 Vdc, I

= 500 mA, P

out

= 21 W Avg., f = 921-960 MHz, GSM EDGE Signal

Power Gain

Drain Efficiency

Error Vector Magnitude

EVM

1.5

Spectral Regrowth at 400 kHz Offset

SR1

-62

dBc

Spectral Regrowth at 600 kHz Offset

SR2

-78

dBc

Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 hm system) V

= 28 Vdc,

= 500 mA, P

out

= 60 W, f = 921-960 MHz

Power Gain

Drain Efficiency

Input Return Loss

IRL

-12

out

@ 1 dB Compression Point

(f = 940 MHz)

P1dB

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

Figure 1. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic

0.057 x 0.525 Microstrip

Z10

0.360 x 0.270 Microstrip

Z11

0.063 x 0.270 Microstrip

Z12

0.360 x 0.065 Microstrip

Z13

0.170 x 0.065 Microstrip

Z14

0.880 x 0.065 Microstrip

Z15

0.260 x 0.065 Microstrip

PCB

Taconic RF-35 0.030,

= 3.5

0.215 x 0.065 Microstrip

0.221 x 0.065 Microstrip

0.500 x 0.100 Microstrip

0.460 x 0.270 Microstrip

0.040 x 0.270 Microstrip

0.280 x 0.270 x 0.530 Taper

0.087 x 0.525 Microstrip

0.435 x 0.525 Microstrip

BIAS

SUPPLY

OUTPUT

INPUT

DUT

Z10

C14

C13

C10

C11

C15

C16

C17

C18

C19

Z11

Z12

Z13

Z14

C12

Z15

Table 6. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Ferrite Bead

95F786

Newark

Ferrite Bead

95F787

Newark

C1, C8, C14, C15

47 pF Chip Capacitors

100B470JP500X

Newark

C2, C4, C13

0.8-8.0 pF Variable Capacitors, Gigatrim

44F3360

Newark

3.0 pF Chip Capacitor

100B3R0JP500X

Newark

C5, C6

15 pF Chip Capacitors

100B150JP500X

Newark

C7, C16, C17

10 µF, 35 V Tantalum Capacitors

93F2975

Newark

100 µF, 50 V Electrolytic Capacitor

51F2913

Newark

C10, C11

13 pF Chip Capacitors

100B130JP500X

Newark

C12

3.9 pF Chip Capacitor

100B3R9JP500X

Newark

C18

0.56 µF Chip Capacitor

700A561MP150X

Newark

C19

470 µF, 63 V Electrolytic Capacitor

95F4579

Newark

L1, L2

12.5 nH Inductor

A04T-5

Coilcraft

1 k Chip Resistor

05F1545

Newark

560 k Chip Resistor

84N2435

Newark

12 Chip Resistor

97C9103

Newark

27 W Chip Resistor

04H7058

Newark

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

TYPICAL CHARACTERISTICS

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc), AL

T1 (dBc)

-24

-20

920

840

IRL

ACPR

f, FREQUENCY (MHz)

Figure 3. Single-Carrier N-CDMA Broadband Performance @ P

out

= 14 Watts Avg.

900

890

880

870

860

850

20.6

21.8

-65

-50

-55

-60

, DRAIN

EFFICIENCY (%)

21.6

21.4

21.2

20.8

-45

910

ALT1

-16

-12

-8

= 28 Vdc, P

out

= 14 W (Avg.), I

= 450 mA

N -CDMA IS-95 Pilot, Sync, Paging, Traffic Codes
8 Through 13

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc), AL

T1 (dBc)

-20

-16

920

840

IRL

ACPR

f, FREQUENCY (MHz)

Figure 4. Single-Carrier N-CDMA Broadband Performance @ P

out

= 28 Watts Avg.

900

890

880

870

860

850

21.6

21.4

-64

-40

-48

-56

, DRAIN

EFFICIENCY (%)

21.2

20.8

20.6

20.4

-32

910

ALT1

-12

-8

-4

= 28 Vdc, P

out

= 28 W (Avg.), I

= 450 mA

N -CDMA IS-95 Pilot, Sync, Paging, Traffic Codes
8 Through 13

Figure 5. Two-Tone Power Gain versus

Output Power

100

= 675 mA

out

, OUTPUT POWER (WATTS) PEP

, POWER GAIN (dB)

550 mA

450 mA

300

= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two -Tone Measurements, 100 kHz Tone Spacing

Figure 6. Third Order Intermodulation Distortion

versus Output Power

-30

-10

out

, OUTPUT POWER (WATTS) PEP

-20

100

-60

-40

INTERMODULA

TION DIST

ORTION

(dBc)

IMD, THIRD ORDER

= 225 mA

350 mA

-50

20.2

350 mA

225 mA

= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two -Tone Measurements, 100 kHz Tone Spacing

450 mA

550 mA

675 mA

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 7. Intermodulation Distortion Products

versus Output Power

-80

-10

7th Order

out

, OUTPUT POWER (WATTS) PEP

= 28 Vdc, I

= 450 mA, f1 = 880 MHz

f2 = 880.1 MHz, Two -Tone Measurements
Center Frequency = 880 MHz

5th Order

3rd Order

-20

-30

-40

300

IMD, INTERMODULA

TION

DIST

ORTION

(dBc)

-50

-60

-70

100

Figure 8. Intermodulation Distortion Products

versus Tone Spacing

-70

0.05

7th Order

TWO -TONE SPACING (MHz)

= 28 Vdc, P

out

= 60 W (PEP)

= 450 mA, Two -Tone Measurements

Center Frequency = 880 MHz

5th Order

-10

-20

-30

-40

-50

-60

300

IMD, INTERMODULA

TION

DIST

ORTION

(dBc)

Figure 9. Pulse CW Output Power versus

Input Power

P3dB = 50 dBm (150 W)

, INPUT POWER (dBm)

= 28 Vdc, I

= 450 mA

Pulsed CW, 8

µsec(on), 1 msec(off)

Center Frequency = 880 MHz

Actual

Ideal

P1dB = 49.1 dBm (100 W)

out

, OUTPUT POWER (dBm)

Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power

Gain and Drain Efficiency versus Output Power

-5

-85

out

, OUTPUT POWER (WATTS) AVG.

-25

-35

-45

-55

-75

-65

ALT1

= 25

ACPR

, DRAIN EFFICIENCY (%), G

, POWER GAIN (dB)

= 28 Vdc, I

= 450 mA

f = 880 MHz, N-CDMA IS-95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13

T1, CHANNEL POWER (dBc)

ACPR, ADJACENT CHANNEL POWER RA

TIO

(dBc)

0.1

100

3rd Order

-30

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

TYPICAL CHARACTERISTICS

100

out

, OUTPUT POWER (WATTS) CW

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

= 28 Vdc

= 450 mA

f = 880 MHz

= -30

-30

21.5

,
DRAIN

EFFICIENCY (%)

, POWER GAIN (dB)

Figure 12. Power Gain versus Output Power

out

, OUTPUT POWER (WATTS) CW

= 12 V

16 V

, POWER GAIN (dB)

140

16
15

= 450 mA

f = 880 MHz

20.5

19.5

18.5

90 100 110 120 130

20 V

24 V

28 V

32 V

210

, JUNCTION TEMPERATURE (

°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

MTTF

F
ACT

OR (HOURS X AMPS

)

110

130

150

170

190

Figure 13. MTTF Factor versus Junction Temperature

100

120

140

160

180

200

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

PACKAGE DIMENSIONS

TO-270-2

PLASTIC

CASE 1265-08

ISSUE H

DATUM

PLANE

BOTTOM VIEW

EXPOSED

HEATSINK AREA

PIN ONE ID

ÇÇÇÇ

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.

4. DIMENSIONS

"D1" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D1" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION b1 DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. DIMENSIONS

"D" AND "E2" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS

"D" AND "E2" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -D-.

NOTE 7

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.078

.082

1.98

2.08

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.416

.424

10.57

10.77

.378

.382

9.60

9.70

.290

.320

7.37

8.13

.016

.024

0.41

0.61

.436

.444

11.07

11.28

.238

.242

6.04

6.15

.066

.074

1.68

1.88

.150

.180

3.81

4.57

.058

.066

1.47

1.68

.193

.199

4.90

5.06

.007

.011

0.18

0.28

aaa

.025 BSC

.004

0.64 BSC

0.10

PIN 1

PIN 2

PIN 3

STYLE 1:

PIN 1. DRAIN

2. GATE
3. SOURCE

.231

.235

5.87

5.97

MRF6S9060NR1(MR1)

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

RF Device Data

Freescale Semiconductor

ÉÉÉÉÉ

CASE 1337-03

ISSUE C

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED

AREA OF THE HEAT SLUG.

SEATING

PLANE

DATUM

PLANE

DRAIN

LEAD

NOTE 8

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.928

.932

23.57

23.67

.438

.442

11.12

11.23

.248

.252

6.30

6.40

.193

.007

.011

.18

.063

.068

1.60

aaa

VIEW Y-Y

.810 BSC

.004

20.57 BSC

.10

STYLE 1:

PIN 1. DRAIN

2. GATE
3. SOURCE

.025 BSC

.28

1.73

PIN 3

ZONE "J"

aaa

C A

aaa

C A

.199

4.90

0.64 BSC

5.05

DRAIN ID

GATE

LEAD

.241

.245

6.12

6.22

TO-272-2

PLASTIC

MRF6S9060NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

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Document Number: MRF6S9060

Rev. 1, 6/2005

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6S9060MBR1

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6S9060MBR1