MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N-CDMA Application
· Typical Single-Carrier N-CDMA Performance: V

= 28 Volts, I

950 mA, P

out

= 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95

CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel

Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain -- 20.2 dB

Drain Efficiency -- 31%

ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz Bandwidth

GSM EDGE Application
· Typical GSM EDGE Performance: V

= 28 Volts, I

= 700 mA,

out

= 60 Watts Avg., Full Frequency Band (865-895 MHz or

921-960 MHz)

Power Gain -- 20 dB

Drain Efficiency -- 40% (Typ)

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM -- 1.5% rms

GSM Application
· Typical GSM Performance: V

= 28 Volts, I

= 700 mA, P

out

125 Watts, Full Frequency Band (921-960 MHz)

Power Gain -- 19 dB

Drain Efficiency -- 62%

· Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,

@ f = 880 MHz

· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· N Suffix Indicates Lead-Free Terminations
· 200°C Capable Plastic Package
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

398

2.3

W/°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF6S9125

Rev. 1, 7/2005

Freescale Semiconductor

Technical Data

MRF6S9125NR1

MRF6S9125NBR1

MRF6S9125MR1

MRF6S9125MBR1

880 MHz, 27 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S9125NR1(MR1)

CASE 1484-02, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S9125NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 125 W CW

Case Temperature 76°C, 27 W CW

0.44
0.45

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

C (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 400 µAdc)

GS(th)

2.1

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 950 mAdc)

GS(Q)

2.89

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2.74 Adc)

DS(on)

0.05

0.23

0.3

Vdc

Forward Transconductance

= 10 Vdc, I

= 8 Adc)

Dynamic Characteristics

(3)

Output Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 950 mA, P

out

= 27 W, f = 880 MHz

Power Gain

20.2

Drain Efficiency

Adjacent Channel Power Ratio

ACPR

-47.1

-45

dBc

Input Return Loss

IRL

-16

-9

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

3. Part is internally input matched.

(continued)

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

(continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) V

= 28 Vdc, I

= 950 mA,

out

= 60 W Avg., 921 MHz<Frequency<960 MHz

Power Gain

Drain Efficiency

Error Vector Magnitude

EVM

1.5

% rms

Spectral Regrowth at 400 kHz Offset

SR1

-63

dBc

Spectral Regrowth at 600 kHz Offset

SR2

-78

dBc

Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) V

= 28 Vdc, I

= 700 mA, P

out

= 125 W,

921 MHz<Frequency<960 MHz

Power Gain

Drain Efficiency

Input Return Loss

IRL

-12

out

@ 1 dB Compression Point, CW

(f = 880 MHz)

P1dB

125

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic

Z10

0.057 x 0.620 Microstrip

Z11

0.119 x 0.620 Microstrip

Z12

0.450 x 0.220 Microstrip

Z13

0.061 x 0.220 Microstrip

Z14

0.078 x 0.220 Microstrip

Z15

0.692 x 0.080 Microstrip

Z16

0.368 x 0.080 Microstrip

PCB

Arlon GX-0300-55-22, 0.030,

= 2.55

Z1, Z17

0.200 x 0.080 Microstrip

1.060 x 0.080 Microstrip

0.382 x 0.220 Microstrip

0.108 x 0.220 Microstrip

0.200 x 0.420 x 0.620 Taper

0.028 x 0.620 Microstrip

0.236 x 0.620 Microstrip

0.050 x 0.620 Microstrip

0.238 x 0.620 Microstrip

BIAS

SUPPLY

OUTPUT

INPUT

DUT

C10

C11

C18

C20

C21

C22

Z10

Z11

Z12

Z14

Z15

C12

C13

Z13

C14

C15

C16

Z16

C17

Z17

C23

C19

Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

20 pF Chip Capacitor

600B200FT250XT

ATC

6.2 pF Chip Capacitor

600B6R2BT250XT

ATC

C3, C15

0.8-8.0 pF Variable Capacitors, Gigatrim

27291SL

Johanson

C4, C5

11 pF Chip Capacitors

600B110FT250XT

ATC

C6, C18, C19

0.56 µF, 50 V Chip Capacitors

C1825C564J5RAC

Kemet

C7, C8

47 µF, 16 V Tantalum Capacitors

593D476X9016D2T

Vishay

C9, C23

47 pF Chip Capacitors

700B470FW500XT

ATC

C10

100 µF, 50 V Electrolytic Capacitor

515D107M050BB6A

Vishay

C11, C12

12 pF Chip Capacitors

600B120FT250XT

ATC

C13, C14

5.1 pF Chip Capacitors

600B5R1BT250XT

ATC

C16

0.3 pF Chip Capacitor

700B0R3BW500XT

ATC

C17

39 pF Chip Capacitor

700B390FW500XT

ATC

C20, C21

22 µF, 35 V Tantalum Capacitors

T491X226K035AS

Kemet

C22

470 µF, 63 V Electrolytic Capacitor

SME63V471M12X25LL

United Chemi-Con

7.15 nH Inductor

1606-7J

CoilCraft

8.0 nH Inductor

A03T

CoilCraft

15 , 1/4 W Chip Resistor (1210)

Dale/Vishay

560 k, 1/8 W Resistor (1206)

Dale/Vishay

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

TYPICAL CHARACTERISTICS

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc), AL

T1 (dBc)

-25

-20

910

850

IRL

ACPR

f, FREQUENCY (MHz)

Figure 3. Single-Carrier N-CDMA Broadband Performance @ P

out

= 27 Watts Avg.

890

880

870

860

18.5

20.5

20.3

-70

-40

-50

-60

, DRAIN

EFFICIENCY (%)

19.8

19.5

19.3

-30

900

ALT1

-15

-10

-5

= 28 Vdc, P

out

= 27 W (Avg.)

= 950 mA, N-CDMA IS-95 Pilot

Sync, Paging, Traffic Codes 8 Through 13

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

ACPR (dBc), AL

T1 (dBc)

-25

-20

910

850

IRL

ACPR

f, FREQUENCY (MHz)

Figure 4. Single-Carrier N-CDMA Broadband Performance @ P

out

= 62.5 Watts Avg.

900

890

880

870

860

19.6

19.4

-70

-40

-50

-60

, DRAIN

EFFICIENCY (%)

19.2

18.8

18.6

18.4

-30

-15

-10

-5

= 28 Vdc, P

out

= 62.5 W (Avg.)

= 950 mA, N-CDMA IS-95 Pilot

Sync, Paging, Traffic Codes 8 Through 13

Figure 5. Two-Tone Power Gain versus

Output Power

100

= 1475 mA

out

, OUTPUT POWER (WATTS) PEP

, POWER GAIN (dB)

1187 mA

950 mA

300

= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two -Tone Measurements, 100 MHz Tone Spacing

Figure 6. Third Order Intermodulation Distortion

versus Output Power

-30

-10

out

, OUTPUT POWER (WATTS) PEP

-20

100

-60

-40

INTERMODULA

TION DIST

ORTION

(dBc)

IMD, THIRD ORDER

-50

18.2

712 mA

475 mA

18.8

ALT1

300

= 1425 mA

1187 mA

950 mA

712 mA

475 mA

= 28 Vdc

f1 = 880 MHz, f2 = 880.1 MHz
Two -Tone Measurements, 100 MHz Tone Spacing

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 7. Intermodulation Distortion Products

versus Output Power

-70

-10

7th Order

out

, OUTPUT POWER (WATTS) PEP

5th Order

3rd Order

-20

-30

-40

300

IMD, INTERMODULA

TION

DIST

ORTION

(dBc)

-50

-60

100

Figure 8. Intermodulation Distortion Products

versus Tone Spacing

-60

-10

0.1

7th Order

TWO -TONE SPACING (MHz)

= 28 Vdc, P

out

= 125 W (PEP)

= 950 mA, Two -Tone Measurements

Center Frequency = 880 MHz

5th Order

-20

-30

-40

-50

100

IMD, INTERMODULA

TION

DIST

ORTION

(dBc)

Figure 9. Pulse CW Output Power versus

Input Power

P3dB = 52.4 dBm (172.5 W)

, INPUT POWER (dBm)

= 28 Vdc, I

= 950 mA

Pulsed CW, 8

µsec(on), 1 msec(off)

Center Frequency = 880 MHz

Actual

Ideal

out

, OUTPUT POWER (dBm)

Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power

Gain and Drain Efficiency versus Output Power

-80

out

, OUTPUT POWER (WATTS) AVG.

-30

-40

-50

-60

0.1

-70

ALT1

= -30

ACPR

, DRAIN EFFICIENCY (%), G

, POWER GAIN (dB)

= 28 Vdc, I

= 950 mA

f = 880 MHz, N-CDMA IS-95 (Pilot
Sync, Paging, Traffic Codes 8
Through 13)

T1, CHANNEL POWER (dBc)

ACPR, ADJACENT CHANNEL POWER RA

TIO

(dBc)

3rd Order

-30

P1dB = 51.5 dBm (139.3 W)

100

200

-30

= 28 Vdc, I

= 950 mA

f1 = 880 MHz, f2 = 880.1 MHz
Two -Tone Measurements, Center Frequency = 880 MHz

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

TYPICAL CHARACTERISTICS

100

out

, OUTPUT POWER (WATTS) CW

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

= 28 Vdc

= 950 mA

f = 880 MHz

= -30

-30

,
DRAIN

EFFICIENCY (%)

, POWER GAIN (dB)

Figure 12. Power Gain versus Output Power

out

, OUTPUT POWER (WATTS) CW

= 12 V

16 V

, POWER GAIN (dB)

250

= 950 mA

f = 880 MHz

100

200

20 V

24 V

28 V

32 V

200

150

210

, JUNCTION TEMPERATURE (

°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

MTTF

F
ACT

OR (HOURS X AMPS

)

110

130

150

170

190

Figure 13. MTTF Factor versus Junction Temperature

100

120

140

160

180

200

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

f = 860 MHz

Figure 16. Series Equivalent Source and Load Impedance

MHz

source

load

860
865
870

1.48 - j0.14

1.66 - j0.02

1.56 - j0.09

0.62 - j2.13
0.64 - j2.31
0.62 - j2.45

= 28 Vdc, I

= 950 mA, P

out

= 27 W Avg.

875
880

1.74 + j0.11

1.73 + j0.04

0.59 - j2.43
0.57 - j2.42

source

= Test circuit impedance as measured from

gate to ground.

load

= Test circuit impedance as measured

from drain to ground.

Z source

Z load

Input
Matching
Network

Device
Under
Test

Output
Matching
Network

885
890
895

1.68 + j0.19

1.52 + j0.33

1.61 + j0.25

0.54 - j2.36
0.57 - j2.18
0.58 - j1.94

900

1.48 + j0.37

0.59 - j1.86

= 5

f = 900 MHz

source

f = 900 MHz

f = 860 MHz

load

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

PACKAGE DIMENSIONS

CASE 1486-03

ISSUE C

DATUM
PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS

"D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION

"b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE

"b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING
PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

TO-270 WB-4

PLASTIC

MRF6S9125NR1(MR1)

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

ÉÉÉÉÉÉ

CASE 1484-02

ISSUE B

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER

ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF

THE HEAT SLUG.

DATUM

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.600

- - -

15.24

- - -

.270

- - -

6.86

- - -

.928

.932

23.57

23.67

.551

.559

14.2

.353

.357

8.97

9.07

.164

.170

4.17

4.32

.007

.011

.18

.28

.063

.068

1.60

1.73

aaa

.106 BSC

.004

2.69 BSC

.10

GATE LEAD

aaa

C A

aaa

C A

VIEW Y-Y

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.025 BSC

0.64 BSC

ZONE J

SEATING

PLANE

.810 BSC

20.57 BSC

PIN 5

DRAIN LEAD

NOTE 8

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

.346

.350

8.79

8.89

TO-272 WB-4

PLASTIC

MRF6S9125NBR1(MBR1)

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

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Denver, Colorado 80217

1-800-441-2447 or 303-675-2140

Fax: 303-675-2150

LDCForFreescaleSemiconductor@hibbertgroup.com

Document Number: MRF6S9125

Rev. 1, 7/2005

RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.

For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.

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