MRF6S9130HR3 MRF6S9130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 27 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 19.2 dB
Drain Efficiency -- 30.5%
ACPR @ 750 kHz Offset -- -48.1 dBc in 30 kHz Bandwidth
GSM Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 950 mA, P
out
=
130 Watts, Full Frequency Band (921-960 MHz)
Power Gain -- 18 dB
Drain Efficiency -- 63%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 950 mA,
P
out
= 56 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain -- 18.5 dB
Drain Efficiency -- 44%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM -- 1.5% rms
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
389
2.2
W
W/C
Storage Temperature Range
T
stg
- 65 to +150
C
Case Operating Temperature
T
C
150
C
Operating Junction Temperature
T
J
200
C
Document Number: MRF6S9130H
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF6S9130HR3
MRF6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF6S9130HSR3
CASE 465-06, STYLE 1
NI-780
MRF6S9130HR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 130 W CW
Case Temperature 75C, 27 W CW
R
JC
0.45
0.51
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400 Adc)
V
GS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc)
V
GS(Q)
2
2.9
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
V
DS(on)
--
0.22
0.5
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 8 Adc)
g
fs
--
10
--
S
Dynamic Characteristics
(3)
Output Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
66
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.6
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
18
19.2
21
dB
Drain Efficiency
D
29
30.5
--
%
Adjacent Channel Power Ratio
ACPR
--
-48.1
-46
dBc
Input Return Loss
IRL
--
-30
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched on input.
(continued)
MRF6S9130HR3 MRF6S9130HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) V
DD
= 28 Vdc, I
DQ
= 950 mA,
P
out
= 56 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
G
ps
--
18.5
--
dB
Drain Efficiency
D
--
44
--
%
Error Vector Magnitude
EVM
--
1.5
--
% rms
Spectral Regrowth at 400 kHz Offset
SR1
--
-63
--
dBc
Spectral Regrowth at 600 kHz Offset
SR2
--
-75
--
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 130 W,
921 MHz<Frequency<960 MHz
Power Gain
G
ps
--
18
--
dB
Drain Efficiency
D
--
63
--
%
Input Return Loss
IRL
--
-12
--
dB
P
out
@ 1 dB Compression Point, CW
(f = 940 MHz)
P1dB
--
135
--
W
4
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic
Z14
0.045 x 0.220 Microstrip
Z15
0.755 x 0.080 Microstrip
Z16
0.496 x 0.080 Microstrip
Z17
0.384 x 0.080 Microstrip
PCB
Arlon GX-0300-55-22, 0.030,
r
= 2.55
Z1
0.383 x 0.080 Microstrip
Z2
1.250 x 0.080 Microstrip
Z3
0.190 x 0.220 Microstrip
Z4
0.127 x 0.220 Microstrip
Z5
0.173 x 0.220 Microstrip
Z6, Z11
0.200 x 0.220 x 0.620 Taper
Z7
0.220 x 0.630 Microstrip
Z8
0.077 x 0.630 Microstrip
Z9
0.146 x 0.630 Microstrip
Z10
0.152 x 0.630 Microstrip
Z12
0.184 x 0.220 Microstrip
Z13
0.261 x 0.220 Microstrip
Z1
RF
INPUT
C1
C2
Z2
Z3
Z4
Z5
Z6
C4
C5
DUT
Z8
Z9
C8
C9
Z10
C10
C11
C12
C13
RF
OUTPUT
C3
Z7
Z11 Z12
Z13
Z14
Z15
Z16
Z17
C6
C7
B1
B2
V
BIAS
L1
L2
C14
C15
C16
C17 C18
C19
V
SUPPLY
+
+
+
+
+
Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair Rite
C1, C13, C14
47 pF Chip Capacitors
100B470JP500X
ATC
C2
8.2 pF Chip Capacitor
100B8R2BP500X
ATC
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
12 pF Chip Capacitors
100B120JP500X
ATC
C6
20 K pF Chip Capacitor
200B203KP50X
ATC
C7, C16, C17, C18
10 F, 35 V Tantalum Chip Capacitors
T491D106K035AS
Kemet
C8, C9
10 pF Chip Capacitors
100B7R5JP500X
ATC
C10
11 pF Chip Capacitor
100B110JP500X
ATC
C12
0.6-4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15
0.56 F, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C19
470 F, 63 V Electrolytic Capacitor
SME63VB471M12X25LL
United Chemi-Con
L1, L2
12.5 nH Inductors
A04T-5
Coilcraft
MRF6S9130HR3 MRF6S9130HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF6S9130HR3(SR3)
Test Circuit Component Layout
CUT
OUT
AREA
C7
B2
C6
B1
L1
C4
C8
C5
C9
C3
C2
C1
C16 C17 C18
C19
C15
C14
L2
C10
C11
C12
C13
900 MHz
Rev 02
6
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
TYPICAL CHARACTERISTICS
-25
-5
-10
-15
-20
-30
-45
-5
-15
-25
-35
-55
IRL,
INPUT RETURN LOSS (dB)
ACPR (dBc)
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
920
840
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ P
out
= 27 Watts Avg.
910
900
890
880
870
860
850
20
19.5
-54
34
30
26
-44
-48
-50
920
840
IRL
G
ps
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ P
out
= 54 Watts Avg.
910
900
890
880
870
860
850
20
19.5
-44
47
41
35
-34
-38
-42
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
15
20
1
I
DQ
= 1400 mA
1100 mA
P
out
, OUTPUT POWER (WATTS) PEP
19
18
17
10
400
-20
1
I
DQ
= 500 mA
P
out
, OUTPUT POWER (WATTS) PEP
100
-30
-40
-50
-60
10
D
, DRAIN
EFFICIENCY (%)
D
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
OR
TION (dBc)
IMD, THIRD ORDER
18.5
17.5
16.5
15.5
15
V
DD
= 28 Vdc, P
out
= 27 W (Avg.)
I
DQ
= 950 mA, N-CDMA IS-95 Pilot, Sync,
Paging, Traffic Codes 8 Through 13
18.5
17.5
16.5
15.5
15
16
950 mA
500 mA
-10
700 mA
1400 mA
16
17
18
19
-52
-46
28
32
V
DD
= 28 Vdc, P
out
= 54 W (Avg.)
I
DQ
= 950 mA, N-CDMA IS-95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
19
18
17
16
44
38
-36
-40
D
ACPR
V
DD
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
700 mA
400
950 mA
1100 mA
V
DD
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
MRF6S9130HR3 MRF6S9130HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
0
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 950 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, Power
Gain and Drain Efficiency versus Output Power
0
-60
P
out
, OUTPUT POWER (WATTS) AVG.
60
-30
40
-35
30
-40
20
-45
-50
1
10
100
10
V
DD
= 28 Vdc, I
DQ
= 950 mA, f = 880 MHz
N-CDMA IS-95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
37
56
P3dB = 52.54 dBm (179.47 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 950 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 880 MHz
55
54
52
50
33
32
35
34
36
Actual
Ideal
P1dB = 51.8 dBm (151.36 W)
55.5
51
53
31
300
13
20
1
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 950 mA
f = 880 MHz
100
10
19
18
17
16
15
60
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
D
, DRAIN EFFICIENCY (%)
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
P
out
, OUTPUT POWER (dBm)
D
G
ps
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
V
DD
= 12 V
16
V
250
14
20
0
200
50
16
15
100
150
18
17
19
I
DQ
= 950 mA
f = 880 MHz
50
-55
D
ACPR
20
V
24
V
28
V
32
V
-10
54.5
53.5
52.5
51.5
50.5
31.5
32.5
33.5
34.5
35.5
36.5
150
14
50
19.5
18.5
17.5
16.5
15.5
14.5
8
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
TYPICAL CHARACTERISTICS
210
10
9
T
J
, JUNCTION TEMPERATURE (
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
MTTF
F
ACT
OR (HOURS X AMPS
2
)
90
110
130
150
170
190
Figure 12. MTTF Factor versus Junction Temperature
100
120
140
160
180
200
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 13. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @
1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
.........
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.
-60
-110
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
-ACPR in 30 kHz
Integrated BW
-ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
MRF6S9130HR3 MRF6S9130HSR3
9
RF Device Data
Freescale Semiconductor
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
850
865
880
1.50 - j0.09
1.55 + j0.31
1.52 + j0.11
0.89 - j1.18
0.87 - j1.03
0.85 - j0.89
V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg.
Z
o
= 2
Z
load
f = 850 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 910 MHz
Z
source
895
910
1.68 + j0.71
1.60 + j0.51
0.83 - j0.75
0.84 - j0.64
f = 850 MHz
f = 910 MHz
10
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
NOTES
MRF6S9130HR3 MRF6S9130HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE G
NI-780
MRF6S9130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.772
0.788
19.60
20.00
Q
.118
.138
3.00
3.51
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S
0.365
0.375
9.27
9.52
M
0.774
0.786
19.66
19.96
aaa
0.005 REF
0.127 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE H
NI-780S
MRF6S9130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.805
0.815
20.45
20.70
B
0.380
0.390
9.65
9.91
C
0.125
0.170
3.18
4.32
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
M
0.774
0.786
19.61
20.02
R
0.365
0.375
9.27
9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.005 REF
0.127 REF
S
0.365
0.375
9.27
9.52
N
0.772
0.788
19.61
20.02
U
---
0.040
---
1.02
Z
---
0.030
---
0.76
M
A
M
bbb
B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
12
RF Device Data
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MRF6S9130HR3 MRF6S9130HSR3
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