MRF6V2300N MRF6V2300NB

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFETs

Designed primarily for pulsed wideband large - signal output and driver

applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
· Typical CW Performance at 220 MHz: V

= 50 Volts, I

= 900 mA,

out

= 300 Watts

Power Gain -- 27

Drain Efficiency -- 68%

· Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW

Output Power

Features
· Integrated ESD Protection
· Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

· Excellent Thermal Stability
· Facilitates Manual Gain Control, ALC and Modulation Techniques
· 225°C Capable Plastic Package
· RoHS Compliant

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +110

Vdc

Gate-Source Voltage

-6.0, +10

Vdc

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3)

Unit

Thermal Resistance, Junction to Case

Case Temperature TBD°C, TBD W CW

TBD
TBD

°C/W

1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product. (Calculator available when part is in production.)

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.

Document Number: Order from RF Marketing

Rev. 4, 10/2006

Freescale Semiconductor

Technical Data

MRF6V2300N

MRF6V2300NB

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6V2300NB

PREPRODUCTION

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6V2300N

10-450 MHz, 300 W, 50 V

LATERAL N-CHANNEL

SINGLE-ENDED

BROADBAND

RF POWER MOSFETs

PARTS ARE SINGLE-ENDED

RF Device Data

Freescale Semiconductor

MRF6V2300N MRF6V2300NB

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

TBD (Minimum)

Machine Model (per EIA/JESD22-A115)

TBD (Minimum)

Charge Device Model (per JESD22-C101)

TBD (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 110 Vdc, V

= 0 Vdc)

DSS

Adc

Zero Gate Voltage Drain Leakage Current

= 50 Vdc, V

= 0 Vdc)

DSS

Adc

Drain-Source Breakdown Voltage

= 150 mA, V

= 0 Vdc)

DSS

110

Vdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

Adc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 800 Adc)

GS(th)

2.4

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2 Adc)

DS(on)

0.3

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

= 50

Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

2.44

Output Capacitance

= 50

Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

120

Input Capacitance

= 50

Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

iss

282

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 50 Vdc, I

= 900 mA, P

out

= 300

W, f = 220 MHz, CW

Power Gain

Drain Efficiency

Input Return Loss

IRL

-17

out

@ 1 dB Compression Point, CW

(f = 220 MHz)

P1dB

330

ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.

MRF6V2300N MRF6V2300NB

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

400

27.5

= 50 Vdc

= 900 mA

f = 220 MHz

100

out

, OUTPUT POWER (WATTS) CW

Figure 1. Power Gain and Drain Efficiency

versus CW Output Power

, POWER GAIN (dB)

DRAIN EFFICIENCY (%)

150

400

= 50 Vdc

f = 220 MHz

100

out

, OUTPUT POWER (WATTS) CW

Figure 2. Power Gain versus Output Power

, POWER GAIN (dB)

150

= 990 mA

1090 mA

720 mA

810 mA

900 mA

100

-50

-20

out

, OUTPUT POWER (WATTS) PEP

-25

-30

-35

-40

200

Figure 3. Third Order Intermodulation

Distortion versus Output Power

IMD,

THIRD ORDER INTERMODULA

TION

DIST

ORTION (dBc)

150

= 50 Vdc, I

= 900 mA

f1 = 220 MHz, f2 = 220.1 MHz
Two-Tone Measurements

25_C

-30_C

85_C

, INPUT POWER (dBm)

Figure 4. Output Power versus Input Power

over Temperature

out

, OUTPUT POWER (dBm)

= 50 Vdc

= 900 mA

f = 220 MHz

26.5

25.5

24.5

200

250

300

350

200

250

300

350

-45

IM3-L

IM3-U

RF Device Data

Freescale Semiconductor

MRF6V2300N MRF6V2300NB

PACKAGE DIMENSIONS

CASE 1486-03

ISSUE C

DATUM

PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING

PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

TO-270 WB-4

PLASTIC

MRF6V2300N

RF Device Data

Freescale Semiconductor

MRF6V2300N MRF6V2300NB

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Document Number: Order from RF Marketing

Rev. 4, 10/2006

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6V2300NB

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6V2300NB