1
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in
26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power -- 30 Watts PEP
Power Gain -- 20 dB
Efficiency -- 41% (Two Tones)
IMD -- -31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
+ 15, -0.5
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
139
0.93
Watts
W/C
Storage Temperature Range
T
stg
-65 to +150
C
Operating Junction Temperature
T
J
175
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.08
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22-A113
3
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9030M/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
Motorola, Inc. 2003
REV 6
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Freescale Semiconductor, Inc.
For More Information On This Product,
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MRF9030MR1 MRF9030MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100 Adc)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
V
DS(on)
--
0.23
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
2.7
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
49
--
pF
Output Capacitance
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
27
--
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
1.2
--
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
18
20
--
dB
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
37
41
--
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
--
-31
-28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
--
-13
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
--
20
--
dB
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
--
40.5
--
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
--
-31
--
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
--
-12
--
dB
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3
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Z1
0.260 x 0.060 Microstrip
Z2
0.240 x 0.060 Microstrip
Z3
0.500 x 0.100 Microstrip
Z4
0.200 x 0.270 Microstrip
Z5
0.330 x 0.270 Microstrip
Z6
0.140 x 0.270 x 0.520, Taper
Z7
0.040 x 0.520 Microstrip
Z8
0.090 x 0.520 Microstrip
Z9
0.370 x 0.520 Microstrip (MRF9030MR1)
0.290 x 0.520 Microstrip (MRF9030MBR1)
Z10
0.130 x 0.520 Microstrip (MRF9030MR1)
0.210 x 0.520 Microstrip (MRF9030MBR1)
Z11
0.360 x 0.270 Microstrip
Z12
0.050 x 0.270 Microstrip
Z13
0.110 x 0.060 Microstrip
Z14
0.220 x 0.060 Microstrip
Z15
0.100 x 0.060 Microstrip
Z16
0.870 x 0.060 Microstrip
Z17
0.240 x 0.060 Microstrip
Z18
0.340 x 0.060 Microstrip
Board
Taconic RF-35-0300,
r
= 3.5
Z14
C18
RF
INPUT
RF
OUTPUT
Z1
Z2
V
GG
C1
L1
V
DD
Z3
Z10
Z11
Z9
L2
B2
Z4
Z13
C16
B1
C8
C2
C5
C17
C9
Z15
Z18
C14
+
+
+
+
DUT
C7
C15
C3
C4
C6
C10
C11
C12
Z16
Z17
Z8
C13
Z5
Z6
Z7
Z12
Table 1. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
Short Ferrite Bead, Surface Mount
95F786
Newark
B2
Long Ferrite Bead, Surface Mount
95F787
Newark
C1, C7, C14, C15
47 pF Chip Capacitors, B Case
100B470JP 500X
ATC
C2
0.6-4.5 Variable Capacitor, Gigatrim
44F3360
Newark
C3, C11
3.9 pF Chip Capacitors, B Case
100B3R6BP 500X
ATC
C4, C12
0.8-8.0 Variable Capacitors, Gigatrim
44F3360
Newark
C5, C6
6.8 pF Chip Capacitors, B Case
100B7R5JP 500X
ATC
C8, C16, C17
10 F, 35 V Tantulum Chip Capacitors
93F2975
Newark
C9, C10
10 pF Chip Capacitors, B Case
100B100JP 500X
ATC
C13
1.8 pF Chip Capacitor, B Case (MRF9030MR1)
0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1)
100B1R8BP
44F3360
ATC
Newark
C18
220 F Electrolytic Chip Capacitor
14F185
Newark
L1, L2
12.5 nH Coilcraft Inductors
A04T-5
Coilcraft
WB1, WB2
20 mil Brass Shim (0.250 x 0.250)
RF-Design Lab
RF-Design Lab
PCB
Etched Circuit Board
900 MHz 250/Viper Rev 02
DSelectronics
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MRF9030MR1 MRF9030MBR1
4
MOTOROLA RF DEVICE DATA
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1)
900 MHz
CUT
OUT
AREA
Rev 02
V
GG
V
DD
B1
B2
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16 C17
C18
WB1
WB2
L1
L2
Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1)
C1
C2
C3
C5
C8
C7
C9
C10
C6
C11 C12
C14
C15
C16 C17
C18
L1
L2
MRF9030M
C4
CUT
OUT
AREA
B1
B2
C13
WB1
WB2
V
GG
V
DD
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5
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
ps
960
14
22
930
-38
50
IRL
IMD
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two-Tone, 100 kHz Tone Spac
ing
f, FREQUENCY (MHz)
Figure 4. Class AB Broadband Circuit Performance
G
ps
, POWER GAIN (dB)
-10
-18
-14
, DRAIN
h
EFFICIENCY
(%)
IMD, INTERMODUL
A
TION
DIST
ORTION (dBc)
IRL
, INPUT
RETURN
L
OSS (dB)
-12
-16
21
45
20
40
19
35
18
-30
17
-32
16
-34
15
-36
955
950
945
940
935
100
18.5
21.5
0.1
I
DQ
= 375 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
21
20.5
20
19.5
19
10
1
250 mA
200 mA
100
-55
-15
0.1
I
DQ
= 200 mA
375 mA
V
DD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
INTERMODULA
TION DIST
ORTION (dBc)
IMD,
-20
-25
-30
-35
-40
-45
-50
10
1
250 mA
300 mA
100
-80
-10
0.1
7th Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION DIST
ORTION (dBc)
IMD,
-20
-30
-40
-50
-60
-70
10
1
5th Order
3rd Order
100
10
22
0.1
0
60
G
ps
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 8. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY
(%)
20
50
18
40
16
30
14
20
12
10
10
1
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MRF9030MR1 MRF9030MBR1
6
MOTOROLA RF DEVICE DATA
100
10
22
0.1
-60
60
G
ps
IMD
P
out
, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD
versus Output Power
G
ps
, POWER GAIN (dB)
INTERMODULA
TION DIST
ORTION (dBc)
IMD,
, DRAIN EFFICIENCY
(%)
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
20
40
18
20
16
0
14
-20
12
-40
10
1
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7
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
f
MHz
Z
source
Z
load
930
945
960
1.07 + j0.160
1.17 + j0.170
1.14 + j0.385
3.53 - j0.20
3.41 - j0.24
3.60 - j0.17
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
V
DD
= 26 V, I
DQ
= 250 mA, P
out
= 30 Watts (PEP)
Note: Z
load
was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1)
f = 930 MHz
f = 930 MHz
f = 960 MHz
Z
o
= 5
f = 960 MHz
Zsource
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z
source
Z
load
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MRF9030MR1 MRF9030MBR1
8
MOTOROLA RF DEVICE DATA
f
MHz
Z
source
Z
load
930
945
960
1.0 - j0.18
1.0 - j0.03
1.0 - j0.10
3.05 - j0.09
3.00 - j0.07
2.95 - j0.03
V
DD
= 26 V, I
DQ
= 250 mA, P
out
= 30 Watts (PEP)
Note: Z
load
was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1)
f = 930 MHz
Z
o
= 5
f = 960 MHz
f = 930 MHz
f = 960 MHz
Z
load
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Zsource
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z
source
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9
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
NOTES
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MRF9030MR1 MRF9030MBR1
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
TO-270-2
PLASTIC
MRF9030MR1
CASE 1265-08
ISSUE G
DATUM
PLANE
BOTTOM VIEW
A1
2X
E
D1
E4
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
D
A
M
aaa
D
2X
b1
2X
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE -H-.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE -D-.
NOTE 7
c1
F
ZONE J
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.078
.082
1.98
2.08
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.416
.424
10.57
10.77
D1
.378
.382
9.60
9.70
D2
.290
.320
7.37
8.13
D3
.016
.024
0.41
0.61
E
.436
.444
11.07
11.28
E1
.238
.242
6.04
6.15
E2
.066
.074
1.68
1.88
E3
.150
.180
3.81
4.57
E4
.058
.066
1.47
1.68
F
b1
.193
.199
4.90
5.06
c1
.007
.011
0.18
0.28
aaa
.025 BSC
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E5
E5
E5
.231
.235
5.87
5.97
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Freescale Semiconductor, Inc.
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11
MRF9030MR1 MRF9030MBR1
MOTOROLA RF DEVICE DATA
TO-272-2
PLASTIC
MRF9030MBR1
CASE 1337-03
ISSUE B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE -H- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
H
C
A
B
SEATING
PLANE
DATUM
PLANE
2X
b1
A
E1
r1
DRAIN
LEAD
D
D1
E
NOTE 8
Y
Y
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.928
.932
23.57
23.67
D1
E
.438
.442
11.12
11.23
E1
.248
.252
6.30
6.40
F
b1
.193
c1
.007
.011
.18
r1
.063
.068
1.60
aaa
1
VIEW Y-Y
.810 BSC
.004
20.57 BSC
.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
.025 BSC
.28
1.73
PIN 3
A1
A2
F
ZONE "J"
7
B
aaa
M
C A
aaa
M
C A
2X
.199
4.90
0.64 BSC
5.05
c1
2
DRAIN ID
GATE
LEAD
E2
E2
E2
.241
.245
6.12
6.22
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Freescale Semiconductor, Inc.
For More Information On This Product,
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MRF9030MR1 MRF9030MBR1
12
MOTOROLA RF DEVICE DATA
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
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MRF9030M/D
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