MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
· Typical Performance at 945 MHz, 26 Volts

Output Power -- 30 Watts PEP
Power Gain -- 20 dB
Efficiency -- 41% (Two Tones)
IMD -- -31 dBc

· Integrated ESD Protection
· Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

Output Power

· Excellent Thermal Stability
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

· N Suffix Indicates Lead-Free Terminations
· 200

_C Capable Plastic Package

· TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

· TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, + 15

Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

139

0.93

W/°C

Storage Temperature Range

stg

-65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.08

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M2 (Minimum)

Charge Device Model

MRF9030NR1(MR1)
MRF9030NBR1(MBR1)

C7 (Minimum)
C6 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9030M

Rev. 8, 3/2005

Freescale Semiconductor

Technical Data

MRF9030NR1

MRF9030NBR1

MRF9030MR1

MRF9030MBR1

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 1337-03, STYLE 1

TO-272-2

PLASTIC

MRF9030NBR1(MBR1)

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF9030NR1(MR1)

RF Device Data

Freescale Semiconductor

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

Table 5. Electrical Characteristics

= 25°c Unless Otherwise Noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 100 µAdc)

GS(th)

2.9

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 250 mAdc)

GS(Q)

3.8

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 0.7 Adc)

DS(on)

0.23

0.4

Vdc

Forward Transconductance

= 10 Vdc, I

= 2 Adc)

2.7

Dynamic Characteristics

Input Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

iss

Output Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

1.2

Functional Tests

(In Freescale Test Fixture)

Two-Tone Common-Source Amplifier Power Gain

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Two-Tone Drain Efficiency

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

3rd Order Intermodulation Distortion

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

-31

-28

dBc

Input Return Loss

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

-13

-9

Two-Tone Common-Source Amplifier Power Gain

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

Two-Tone Drain Efficiency

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

40.5

3rd Order Intermodulation Distortion

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

IMD

-31

dBc

Input Return Loss

= 26 Vdc, P

out

= 30 W PEP, I

= 250 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

IRL

-12

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

RF Device Data

Freescale Semiconductor

Figure 1. 930-960 MHz Broadband Test Circuit Schematic

0.260 x 0.060 Microstrip

0.240 x 0.060 Microstrip

0.500 x 0.100 Microstrip

0.200 x 0.270 Microstrip

0.330 x 0.270 Microstrip

0.140 x 0.270 x 0.520, Taper

0.040 x 0.520 Microstrip

0.090 x 0.520 Microstrip

0.370 x 0.520 Microstrip (MRF9030NR1/MR1)

0.290 x 0.520 Microstrip (MRF9030NBR1/MBR1)

Z10

0.130 x 0.520 Microstrip (MRF9030NR1/MR1)

0.210 x 0.520 Microstrip (MRF9030NBR1/MBR1)

Z11

0.360 x 0.270 Microstrip

Z12

0.050 x 0.270 Microstrip

Z13

0.110 x 0.060 Microstrip

Z14

0.220 x 0.060 Microstrip

Z15

0.100 x 0.060 Microstrip

Z16

0.870 x 0.060 Microstrip

Z17

0.240 x 0.060 Microstrip

Z18

0.340 x 0.060 Microstrip

Board

Taconic RF-35-0300,

= 3.5

Z14

C18

INPUT

OUTPUT

Z10

Z11

Z13

C16

C17

Z15

Z18

C14

DUT

C15

C10

C11

C12

Z16

Z17

C13

Z12

Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Short Ferrite Bead, Surface Mount

95F786

Newark

Long Ferrite Bead, Surface Mount

95F787

Newark

C1, C7, C14, C15

47 pF Chip Capacitors

100B470JP 500X

ATC

0.6-4.5 Variable Capacitor, Gigatrim

44F3360

Newark

C3, C11

3.9 pF Chip Capacitors

100B3R6BP 500X

ATC

C4, C12

0.8-8.0 Variable Capacitors, Gigatrim

44F3360

Newark

C5, C6

6.8 pF Chip Capacitors

100B7R5JP 500X

ATC

C8, C16, C17

10 µF, 35 V Tantulum Chip Capacitors

93F2975

Newark

C9, C10

10 pF Chip Capacitors

100B100JP 500X

ATC

C13

1.8 pF Chip Capacitor (MRF9030NR1/MR1)
0.6-4.5 Variable Capacitor, Gigatrim (MRF9030NBR1/MBR1)

100B1R8BP
44F3360

ATC
Newark

C18

220 µF Electrolytic Chip Capacitor

14F185

Newark

L1, L2

12.5 nH Coilcraft Inductors

A04T-5

Coilcraft

WB1, WB2

20 mil Brass Shim (0.250 x 0.250)

RF-Design Lab

PCB

Etched Circuit Board

900 MHz µ250/Viper Rev 02

DSelectronics

RF Device Data

Freescale Semiconductor

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030NR1/MR1)

900 MHz

CUT

OUT

AREA

Rev 02

C10

C11

C12

C13

C14

C15

C16 C17

C18

WB1

WB2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030NBR1/MBR1)

C10

C11 C12

C14

C15

C16 C17

C18

MRF9030M

CUT

OUT

AREA

C13

WB1

WB2

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

960

930

-38

IRL

IMD

= 26 Vdc

out

= 30 W (PEP)

= 250 mA

Two-Tone, 100 kHz Tone Spacing

f, FREQUENCY (MHz)

Figure 4. Class AB Broadband Circuit Performance

, POWER GAIN (dB)

-10

-18

-14

, DRAIN
h

EFFICIENCY

(%)

IMD, INTERMODULA

TION

DIST

TION (dBc)

IRL, INPUT

RETURN

LOSS (dB)

-12

-16

-30

-32

-34

-36

955

950

945

940

935

100

18.5

21.5

0.1

= 375 mA

300 mA

= 26 Vdc

f1 = 945 MHz

f2 = 945.1 MHz

out

, OUTPUT POWER (WATTS) PEP

Figure 5. Power Gain versus Output Power

, POWER GAIN (dB)

20.5

19.5

250 mA

200 mA

100

-55

-15

0.1

= 200 mA

375 mA

= 26 Vdc

f1 = 945 MHz

f2 = 945.1 MHz

out

, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion versus

Output Power

INTERMODULA

TION DIST

TION (dBc)

IMD,

-20

-25

-30

-35

-40

-45

-50

250 mA

300 mA

100

-80

-10

0.1

7th Order

= 26 Vdc

= 250 mA

f1 = 945 MHz

f2 = 945.1 MHz

out

, OUTPUT POWER (WATTS) PEP

Figure 7. Intermodulation Distortion Products

versus Output Power

INTERMODULA

TION DIST

TION (dBc)

IMD,

-20

-30

-40

-50

-60

-70

5th Order

3rd Order

100

0.1

= 26 Vdc

= 250 mA

f = 945 MHz

out

, OUTPUT POWER (WATTS) AVG.

Figure 8. Power Gain and Efficiency versus

Output Power

, POWER GAIN (dB)

, DRAIN EFFICIENCY

(%)

RF Device Data

Freescale Semiconductor

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

PACKAGE DIMENSIONS

TO-270-2

PLASTIC

MRF9030NR1(MR1)

CASE 1265-08

ISSUE G

DATUM

PLANE

BOTTOM VIEW

EXPOSED

HEATSINK AREA

PIN ONE ID

ÇÇÇÇ

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.

2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD

AND IS COINCIDENT WITH THE LEAD WHERE

THE LEAD EXITS THE PLASTIC BODY AT THE

TOP OF THE PARTING LINE.

4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION

IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER

MINED AT DATUM PLANE -H-.

5. DIMENSION b1 DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE .005 TOTAL IN EXCESS

OF THE b1 DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.

8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION

IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO

INCLUDE MOLD MISMATCH AND ARE DETER

MINED AT DATUM PLANE -D-.

NOTE 7

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.078

.082

1.98

2.08

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.416

.424

10.57

10.77

.378

.382

9.60

9.70

.290

.320

7.37

8.13

.016

.024

0.41

0.61

.436

.444

11.07

11.28

.238

.242

6.04

6.15

.066

.074

1.68

1.88

.150

.180

3.81

4.57

.058

.066

1.47

1.68

.193

.199

4.90

5.06

.007

.011

0.18

0.28

aaa

.025 BSC

.004

0.64 BSC

0.10

PIN 1

PIN 2

PIN 3

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

.231

.235

5.87

5.97

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

RF Device Data

Freescale Semiconductor

TO-272-2

PLASTIC

MRF9030NBR1(MBR1)

ÉÉÉÉ

CASE 1337-03

ISSUE B

NOTES:

1. CONTROLLING DIMENSION: INCH.

2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD

WHERE THE LEAD EXITS THE PLASTIC BODY AT

THE TOP OF THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION

IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE

DETERMINED AT DATUM PLANE -H-.

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE .005 TOTAL IN EXCESS

OF THE "b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.

8. CROSSHATCHING REPRESENTS THE EXPOSED

AREA OF THE HEAT SLUG.

SEATING

PLANE

DATUM

PLANE

DRAIN

LEAD

NOTE 8

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.928

.932

23.57

23.67

.438

.442

11.12

11.23

.248

.252

6.30

6.40

.193

.007

.011

.18

.063

.068

1.60

aaa

VIEW Y-Y

.810 BSC

.004

20.57 BSC

.10

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

.025 BSC

.28

1.73

PIN 3

ZONE "J"

aaa

C A

aaa

C A

.199

4.90

0.64 BSC

5.05

DRAIN ID

GATE

LEAD

.241

.245

6.12

6.22

RF Device Data

Freescale Semiconductor

MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1

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MRF9030M

Rev. 8, 3/2005

Document Number:

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