MRF9200LR3 MRF9200LSR3
5-1
Freescale Semiconductor
Wireless RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for
broadband commercial and industrial
applications with
frequencies to 1000 M
Hz
.
The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: V
DD
= 26 Volts,
I
DQ
= 2400 mA, P
out
= 40 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/
Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain -- 17.5 dB
Drain Efficiency -- 25%
ACPR @ 750 kHz Offset -- -46.5 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1
VSWR, @
26
Vdc,
880 MHz, 40 Watts N-CDMA
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
Low Gold Plating Thickness on Leads, 40
Nominal.
In Tape and Reel.
R3
Suffix =
250
Units per
56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
625
3.6
W
W/C
Storage Temperature Range
T
stg
-65 to +150
C
Operating Junction Temperature
T
J
200
C
CW Operation
Case Temperature 60C
Case Temperature 80C
CW
200
160
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 60C, 200 W CW
Case Temperature 80C, 40 W CW
R
JC
0.28
0.34
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9200L
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF9200LSR3
CASE 465B-03, STYLE 1
NI-880
MRF9200LR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
2
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
(per JESD22-A114)
1C (Minimum)
Machine Model
(per EIA/JESD22-A115)
B (Minimum)
Charge Device Model
(per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100 Adc)
V
GS(th)
1.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 2400 mAdc)
V
GS(Q)
3
3.7
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
V
DS(on)
--
0.25
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6.7 Adc)
g
fs
--
8.8
--
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.5
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 2400 mA, P
out
= 40 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz
Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
16
17.5
--
dB
Drain Efficiency
D
22
25
--
%
Adjacent Channel Power Ratio
ACPR
--
-46.5
-45
dBc
Input Return Loss
IRL
--
-13
-9
dB
1. Part is internally matched both on input and output.
MRF9200LR3 MRF9200LSR3
3
Freescale Semiconductor
Wireless RF Product Device Data
Figure 1. MRF9200LR3(SR3) Test Circuit Schematic
C29
C34
B1
Z1
+
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
C32
+
C33
+
C31
C30
C1
R1
L1
C3
C2
C8
C7
C6
C5
C4
C19
C23
+
C20
C21
C22
C24
+
C25
+
C26
+
C27
+
C28
+
L2
Z12
Z13
C11
Z14
C12
Z15
Z16
Z17
C17
C18
Z18
C15
C16
RF
OUTPUT
RF
INPUT
V
BIAS
V
SUPPLY
DRAIN
DRAIN
Z14
0.197 x 0.750 x 0.111 Taper
Z15
0.331 x 0.115 Microstrip
Z16
0.557 x 0.830 Microstrip
Z17
0.078 x 0.830 Microstrip
Z18
0.414 x 0.750 Microstrip
PCB
Arlon, 0.030,
r
= 2.56
Z1
0.015 x 0.083 Microstrip
Z2
0.048 x 0.083 Microstrip
Z3
0.352 x 0.083 Microstrip
Z4
0.086 x 0.050 Microstrip
Z5
0.367 x 0.050 Microstrip
Z6
0.417 x 0.115 Microstrip
Z7
0.068 x 0.397 Microstrip
Z8
0.335 x 0.397 Microstrip
Z9
0.134 x 0.825 x 0.090 Taper
Z10
0.209 x 0.825 Microstrip
Z11
0.148 x 0.825 Microstrip
Z12
0.148 x 0.750 Microstrip
Z13
0.435 x 0.750 Microstrip
DUT
R2
B2
R3
C10
C9
C14
C13
4
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
Figure 2. MRF9200LR3(SR3) Test Circuit Component Layout
V
GG
C34
C31
C30
C33
C32
C29
C5
R1
C1
C2 C3
C4
L1
C6
C8
C7
R2
R3
B2
B1
C9
C11
C21
C22
C23
C24 C26
V
DD
C25
C27
C20
C19
L2
C13
C14
C15
C17
C18
C16
C12
C10
C28
MRF9200 Drain
Rev. 3A
MRF9200 Drain
Rev. 3B
CUT
OUT
AREA
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Table 5. MRF9200LR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Bead, Surface Mount (0603)
2506033007Y0
Fair-Rite
B2
RF Bead, Surface Mount (0805)
2508051107Y0
Fair-Rite
C1
2.2 pF Chip Capacitor (0603)
GQM1885C2A2R2CB01B
Murata
C2, C19
47 pF Chip Capacitors (0805)
GQM2195C1H470JB01B
Murata
C3
2.0 pF Chip Capacitor (0603)
GQM1885C2A2R0BB01B
Murata
C4, C18
0.4-2.5 pF Variable Capacitors
27283PC
Gigatronics
C5
8.2 pF Chip Capacitor (0603)
GQM1885C1H8R2DB01B
Murata
C6, C12
0.8-8.0 pF Variable Capacitors
27291SL
Gigatronics
C7, C8
12 pF Chip Capacitors (0603)
GQM1885C1H120JB01B
Murata
C9, C10
10 pF Chip Capacitors (0805)
GQM2195C2A100JB01B
Murata
C11
5.1 pF Chip Capacitor (0805)
GQM2195C2A5R1DB01B
Murata
C13
3.3 pF Chip Capacitor (0805)
GQM2195C2A3R3CB01B
Murata
C14, C17
1.5 pF Chip Capacitors (0805)
GQM2195C2A1R5CB01B
Murata
C15, C16
22 pF Chip Capacitors (0805)
GQM2195C1H220JB01B
Murata
C20
0.56 F Chip Capacitor (1825)
C1825C564J5RAC
Kemet
C21, C22, C31
2.2 F Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C23
10 F, 50 V Tantalum Chip Capacitor
522Z-050/100MTRE
Tecate
C24, C25, C26, C27
22 F, 35 V Tantalum Chip Capacitors
T491X226K035AS
Kemet
C28
330 F, 63 V Electrolytic Capacitor
NACZF331M100V (18X22)
Nippon
C29
10 F Chip Capacitor (1206)
GRM31MF51A106ZA01B
Murata
C30
0.01 F Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C32, C33
22 F, 25 V Tantalum Chip Capacitors
ECS-T1ED226R
Panasonic TE series
C34
47 F, 16 V Tantalum Chip Capacitor
T491D476K016AS
Kemet
L1
22 nH Chip Inductor (0805)
L0805220JEW
AVX
L2
8 nH Inductor
A03T-5
CoilCraft
R1
510 W, 1/10 W Chip Resistor (0805)
Dale/Vishay
R2, R3
11 W, 1/8 W Chip Resistors (1206)
Dale/Vishay
MRF9200LR3 MRF9200LSR3
5
Freescale Semiconductor
Wireless RF Product Device Data
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
840
IRL
G
ps
ACPR
ALT1
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ P
out
= 40 Watts Avg.
-16
-8
-10
-12
-14
V
DD
= 26 Vdc, P
out
= 40 W (Avg.), I
DQ
=
1800 mA
N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
17
19
18.8
18.6
-70
26
24
22
20
-45
-50
-55
-60
D
,
DRAIN
EFFICIENCY
(%)
D
G
ps
,
POWER
GAIN
(dB)
18.4
18.2
18
17.8
17.6
17.4
17.2
850
860
870
880
890
900
910
920
18
-65
-18
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
840
IRL
G
ps
ACPR
ALT1
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ P
out
= 85 Watts Avg.
-18
-10
-12
-14
-16
V
DD
= 26 Vdc, P
out
= 85 W (Avg.), I
DQ
=
1800 mA
N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
16
18
17.8
17.6
-65
38
36
34
32
-40
-45
-50
-55
D
,
DRAIN
EFFICIENCY
(%)
D
G
ps
,
POWER
GAIN
(dB)
17.4
17.2
17
16.8
16.6
16.4
16.2
850
860
870
880
890
900
910
920
-35
-60
-20
Figure 5. Two-Tone Power Gain versus
Output Power
100
15.5
19
1
I
DQ
= 3000 mA
2400 mA
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
100 kHz Tone Spacing
18
17
16
10
P
out
, OUTPUT POWER (WATTS) PEP
G
ps
,
POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
-55
-25
1
I
DQ
= 1200 mA
3000 mA
10
-30
-35
-40
-45
-50
100
-60
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements, 100 kHz Tone Spacing
P
out
, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
18.5
17.5
16.5
1800 mA
1200 mA
2400 mA
1800 mA
6
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-80
-20
1
100
-50
-60
10
-40
-30
-70
7th Order
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements, Center Frequency = 880 MHz
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-10
0.1
7th Order
TWO-TONE SPACING (MHz)
V
DD
= 26 Vdc, P
out
= 200 W (PEP), I
DQ
= 1800 mA
Two-Tone Measurements, Center Frequency = 880 MHz
5th Order
3rd Order
-20
-30
-40
-50
1
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 9. Pulse CW Output Power versus
Input Power
41
60
33
P3dB = 54.25 dBm (266 W)
P
in
, INPUT POWER (dBm)
V
DD
= 26 Vdc, I
DQ
= 1800 mA
Pulsed CW, 8 sec(on), 1 msec(off)
Center Frequency = 880 MHz
58
54
52
50
48
35
39
37
Actual
Ideal
P1dB = 53.1 dBm (204.1 W)
56
31
P
out
,
OUTPUT
POWER
(dBm)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0
-100
P
out
, OUTPUT POWER (WATTS) AVG.
50
0
40
-20
30
20
-40
10
-80
1
10
100
-60
V
DD
= 26 Vdc, I
DQ
= 1800 mA, f = 880 MHz
N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
D
G
ps
ACPR
D
,
DRAIN
EFFICIENCY
(%),
G
ps
,
POWER
GAIN
(dB)
AL
T1,
CHANNEL
POWER
(dBc)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
ALT1
MRF9200LR3 MRF9200LSR3
7
Freescale Semiconductor
Wireless RF Product Device Data
TYPICAL CHARACTERISTICS
350
8
20
3
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
100
10
18
16
10
50
40
30
20
10
D
,
DRAIN EFFICIENCY (%)
G
ps
D
G
ps
,
POWER
GAIN
(dB)
14
12
V
DD
= 26 Vdc
I
DQ
= 1800 mA
f = 880 MHz
400
8
20
1
-60
60
P
out
, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain, Efficiency and IMD
versus Output Power
100
10
18
16
10
20
0
-20
-40
G
ps
D
G
ps
,
POWER
GAIN
(dB)
14
12
D
,
DRAIN
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
40
IMD
V
DD
= 26 Vdc, I
DQ
= 1800 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements, 100 kHz Tone Spacing
Figure 13. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 28 V
G
ps
,
POWER
GAIN
(dB)
250
14
19
0
200
50
16
15
100
150
17
18
26 V
I
DQ
= 1800 mA
f = 880 MHz
24 V
20 V
16 V
12 V
8
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
TYPICAL CHARACTERISTICS
210
10
11
T
J
, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
10
10
9
10
8
MTTF
F
ACT
OR
(HOURS
X
AMPS
2
)
90
110
130
150
170
190
Figure 14. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
N-CDMA TEST SIGNAL
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
10
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 15. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
PROBABILITY
(%)
-60
-110
-10
(dB)
-20
-30
-40
-50
-70
-80
-90
-100
+ACPR @ 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7
2.2
1.5
0
-0.7
-1.5
-2.2
-2.9
-3.6
3.6
f, FREQUENCY (MHz)
Figure 16. Single-Carrier N-CDMA Spectrum
-ACPR @ 30 kHz
Integrated BW
MRF9200LR3 MRF9200LSR3
9
Freescale Semiconductor
Wireless RF Product Device Data
Figure 17. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
865
880
895
1.30 - j1.66
1.40 - j1.50
1.36 - j1.58
0.98 - j1.41
0.96 - j1.23
0.94 - j1.06
V
DD
= 26 Vdc, I
DQ
= 2400 mA, P
out
= 40 W Avg. N-CDMA
Z
o
= 2
Z
load
f = 895 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 865 MHz
Z
source
f = 865 MHz
f = 895 MHz
10
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
NOTES
MRF9200LR3 MRF9200LSR3
11
Freescale Semiconductor
Wireless RF Product Device Data
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE B
NI-880
MRF9200LR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.335
1.345
33.91
34.16
B
0.535
0.545
13.6
13.8
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
G
1.100 BSC
27.94 BSC
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
Q
.118
.138
3.00
3.51
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
aaa
0.007 REF
0.178 REF
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
CASE 465C-02
ISSUE A
NI-880S
MRF9200LSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.905
0.915
22.99
23.24
B
0.535
0.545
13.60
13.80
C
0.147
0.200
3.73
5.08
D
0.495
0.505
12.57
12.83
E
0.035
0.045
0.89
1.14
F
0.003
0.006
0.08
0.15
H
0.057
0.067
1.45
1.70
K
0.170
0.210
4.32
5.33
N
0.871
0.889
19.30
22.60
R
0.515
0.525
13.10
13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb
B
M
T
B
B
(FLANGE)
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
S
0.515
0.525
13.10
13.30
M
0.872
0.888
22.15
22.55
bbb
0.010 REF
0.254 REF
ccc
0.015 REF
0.381 REF
aaa
0.007 REF
0.178 REF
5-12
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Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
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