MRFG35003NT1 MRFG35003MT1 BWA

RF Reference Design Data

Freescale Semiconductor

RF Reference Design Library

Gallium Arsenide PHEMT

RF Power Field Effect Transistors

Device Characteristics (From Device Data Sheet)

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
AB linear base station applications.
· Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01% Probability)

Output Power -- 300 mWatt
Power Gain -- 11.5 dB
Efficiency -- 25%

· 3 Watts P1dB @ 3.55 GHz
· Excellent Phase Linearity and Group Delay Characteristics
· High Gain, High Efficiency and High Linearity
· N Suffix Indicates Lead-Free Terminations

Reference Design Characteristics
· Typical Single-Channel W-CDMA Performance: -45 dBc ACPR,

2.45 GHz, 12 Volts, I

= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH

(8.5 dB P/A @ 0.01% Probability)

Output Power -- 350 mWatt
Power Gain -- 12.5 dB
Efficiency -- 26%

MRFG35003NT1(MT1) BWA 2.4-2.5 GHz REFERENCE DESIGN

Designed by: Monte Miller and Rick Hooper

This reference design is designed to demonstrate the typi-

cal RF performance characteristics of the
MRFG35003NT1(MT1) when applied for the 2.4-2.5 GHz
W-CDMA frequency band. The reference design is tuned for
the best tradeoff between good W-CDMA linearity and good
power capability and efficiency.

REFERENCE DESIGN LIBRARY TERMS

AND CONDITIONS

Freescale is pleased to make this reference design

available for your use in development and testing of your
own product or products, without charge. The reference
design contains easy - to - copy, fully functional amplifier
designs. Where possible, it consists of "no tune" distrib-
uted element matching circuits designed to be as small as
possible, includes temperature compensated bias circuit-
ry, and is designed to be used as "building blocks" for our
customers.

HEATSINKING

When operating this fixture please provide adequate heat-

sinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.

NONLINEAR SIMULATION

To aid the design process and help reduce time to market

for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:

http://www.freescale.com/rf/models

Available at http://www.freescale.com/rf, Go to Tool

Rev. 1, 6/2005

Freescale Semiconductor

Technical Data

MRFG35003NT1

MRFG35003MT1

BWA

2.4-2.5 GHz

OUTPUT

INPUT

MATC

BIAS

Motorola, Inc. 2003

RF Reference Design Data

Freescale Semiconductor

MRFG35003NT1 MRFG35003MT1 BWA

Figure 1. MRFG35003NT1(MT1) BWA Reference Design Schematic

0.045 x 0.100 Microstrip

0.200 x 0.040 Microstrip

Z10

0.260 x 0.020 Microstrip

Z11

0.200 x 0.516 Microstrip

Z12

0.044 x 0.534 Microstrip

PCB

Rogers 4350, 0.020,

= 3.50

Z1, Z13

0.044 x 0.295 Microstrip

0.044 x 0.730 Microstrip

0.105 x 0.045 Microstrip

0.044 x 0.015 Microstrip

0.340 x 0.320 Microstrip

Z6, Z8

0.146 x 0.070 Microstrip

INPUT

OUTPUT

C14

C13

C12

C11

C10

C15

C17

C18

Z10

Z11

Z12

Z13

C16

Table 1. MRFG35003NT1(MT1) BWA Reference Design Component Designations and Values

Part

Description

Value, P/N or DWG

Manufacturer

3.9 pF Chip Capacitor

08051J3R9BBT

AVX

0.9 pF Chip Capacitor

08051J0R9BBT

AVX

C3, C16

10 pF Chip Capacitors

100A100JP150X

ATC

C4, C15

100 pF Chip Capacitors

100A101JP150X

ATC

C5, C14

100 pF Chip Capacitors

100B101JP500X

ATC

C6, C13

1000 pF Chip Capacitors

100B102JP500X

ATC

C7, C12

0.1 µF Chip Capacitors

CDR33BX104AKWS

Kemet

C8, C11

39K pF Chip Capacitors

200B393KP500X

ATC

C9, C10

22 µF Tantalum Capacitors

T491X226K035AS

Newark

C17

1.0 pF Chip Capacitor

08051J1R0BBT

AVX

C18

15.0 pF Chip Capacitor

08051J15R0GBT

AVX

4.7 nH Chip Inductor

LL2102-F4N7K

TOKO

8.2 nH Chip Inductor

LL1608-FHN2K

TOKO

75 W, 1/4 W 1% Chip Resistor

D55342M07B75JOR

Newark

RF Reference Design Data

Freescale Semiconductor

MRFG35003NT1 MRFG35003MT1 BWA

CHARACTERISTICS

0.1

out

, OUTPUT POWER (WATTS)

Figure 3. Transducer Gain and Power Added

Efficiency versus Output Power

TRANSDUCER GAIN (dB)

P
AE, POWER

ADDED

EFFICIENCY

(%)

PAE

MRFG35003M @ 2.5 GHz
V

= 12 Vdc, I

= 55 mA

f = 2.5 GHz, 8.5 P/A 3GPP W-CDMA

= 0.857é-136.97_

= 0.681é-178.94_

-60

0.1

-60

IRL

ACPR

out

, OUTPUT POWER (WATTS)

Figure 4. W-CDMA ACPR and Input Return

Loss versus Output Power

IRL,

INPUT

RETURN LOSS (dB)

ACPR, (dBc)

MRFG35003M @ 2.5 GHz
V

= 12 Vdc, I

= 55 mA

f = 2.5 GHz, 8.5 P/A 3GPP W-CDMA

= 0.857é-136.97_,

= 0.681é-178.94_

-10

-20

-30

-40

-50

NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown.

NOTE: Data in Figures 5 and 6 is generated from the test circuit shown.

0.01

PAE

out

, OUTPUT POWER (WATTS)

Figure 5. Transducer Gain and Power Added

Efficiency versus Output Power

,
TRANSDUCER GAIN (dB)

P
AE, POWER

ADDED

EFFICIENCY

(%)

MRFG35003M @ 2.45 GHz
V

= 12 Vdc, I

= 55 mA

8.5 P/A 3GPP W-CDMA

0.1

-60

0.01

-60

IRL

ACPR

out

, OUTPUT POWER (WATTS)

Figure 6. W-CDMA ACPR and Input Return

Loss versus Output Power

IRL,

INPUT

RETURN LOSS (dB)

ACPR (dBc)

MRFG35003M @ 2.45 GHz
V

= 12 Vdc, I

= 55 mA

8.5 P/A 3GPP W-CDMA

0.1

-10

-20

-30

-40

-50

MRFG35003NT1 MRFG35003MT1 BWA

RF Reference Design Data

Freescale Semiconductor

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Available at http://www.freescale.com/rf, Go to Tool

Rev. 1, 6/2005

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