MW6S004NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain -- 18 dB
Drain Efficiency -- 33%
IMD -- -34 dBc
Typical Two-Tone Performance @ 900 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain -- 19 dB
Drain Efficiency -- 33%
IMD -- -39 dBc
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
- 65 to +150
C
Operating Junction Temperature
T
J
150
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76C, 4 W PEP, Two-Tone
Case Temperature 79C, 4 W CW
R
JC
8.8
8.5
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S004N
Rev. 1, 4/2006
Freescale Semiconductor
Technical Data
MW6S004NT1
1-2000 MHz, 4 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD 1.5
PLASTIC
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
C
Table 5. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
500
nAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 50 mAdc)
V
GS(th)
1
2.3
5
Vdc
Gate Quiescent Voltage
(1)
(V
DS
= 28 Vdc, I
D
= 50 mAdc, Measured in Functional Test)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 50 mAdc)
V
DS(on)
--
0.27
0.37
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
30
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
21
--
pF
Output Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
25
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two-Tone Test
Power Gain
G
ps
16.5
18
20
dB
Drain Efficiency
D
28
33
--
%
Intermodulation Distortion
IMD
--
-34
-28
dBc
Input Return Loss
IRL
--
-12
-10
dB
Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP,
f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
ps
--
19
--
dB
Drain Efficiency
D
--
33
--
%
Intermodulation Distortion
IMD
--
-39
--
dBc
Input Return Loss
IRL
--
-12
--
dB
1. V
GG
=
11
/
10
x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
MW6S004NT1
3
RF Device Data
Freescale Semiconductor
Figure 1. MW6S004NT1 Test Circuit Schematic
Z7
0.210 x 1.220 Microstrip
Z8
0.054 x 0.680 Microstrip
Z9
0.054 x 0.260 Microstrip
Z10
0.025 x 0.930 Microstrip
PCB
Arlon CuClad 250, 0.020,
r
= 2.5
Z1
0.054 x 0.430 Microstrip
Z2
0.054 x 0.137 Microstrip
Z3
0.580 x 0.420 Microstrip
Z4
0.580 x 0.100 Microstrip
Z5
0.025 x 0.680 Microstrip
Z6
0.210 x 0.100 Microstrip
RF
OUTPUT
V
BIAS
V
SUPPLY
RF
INPUT
DUT
Z1
C2
R1
C8
+
C1
C7
R2
Z5
R3
Z2
Z3
Z4
Z6
Z10
C3
C4
C5
Z7
Z8
C6
Z9
Table 6. MW6S004NT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor (1206)
CDR33BX104AKWS
Kemet
C2, C3, C6, C7
9.1 pF 600B Chip Capacitors
600B9R1CW
ATC
C4, C5
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C8
10 F, 35 V Tantalum Chip Capacitor
T490D106K035AS
Kemet
R1
1 k Chip Resistor (1206)
R2
10 k Chip Resistor (1206)
R3
10 Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MW6S004NT1
Figure 2. MW6S004NT1 Test Circuit Component Layout
25
C8
MW6S004N
Rev 3
R1
C1
R2
C7
C2
R3
C3
C4
C5
C6
MW6S004NT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc)
-28
-16
-20
-24
1990
1930
IRL
G
ps
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ P
out
= 2 Watts Avg.
1980
1970
1960
1950
1940
18.4
18.2
-35
34
33
32
-31
-33
D
, DRAIN
EFFICIENCY (%)
D
18
17.8
17.6
17.2
16.4
16.8
17.4
-32
-30
31
-12
IM3
P
out
, OUTPUT POWER (WATTS) PEP
14
20
1
I
DQ
= 75 mA
19
17
16
10
20
Figure 4. Two-Tone Power Gain versus
Output Power
10
-80
-10
0.01
7th Order
V
DD
= 28 Vdc, I
DQ
= 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two-Tone Measurements
5th Order
3rd Order
1
-20
-30
-40
-50
-60
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION DIST
O
R
T
ION (dBc)
G
ps
, POWER GAIN (dB)
10
-60
-25
0.1
7th Order
TWO-TONE SPACING (MHz)
5th Order
3rd Order
-30
-35
-40
-45
-50
1
100
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
26
47
P3dB = 38.22 dBm (6.637 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 50 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 1960 MHz
43
41
37
35
33
16
18
22
Actual
Ideal
24
14
Figure 7. Pulse CW Output Power versus
Input Power
IMD,
INTERMODULA
TION DIST
OR
TION (dBc)
P
out
, OUTPUT POWER (dBm)
18
50 mA
62.5 mA
P1dB = 37.61 dBm (5.768 W)
-55
0.01
V
DD
= 28 Vdc, P
out
= 2 W (Avg.)
I
DQ
= 50 mA, 100 kHz Tone Spacing
17
16.6
30
-34
-8
15
0.1
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two-Tone Measurements
37.5 mA
25 mA
-70
0.1
V
DD
= 28 Vdc, P
out
= 2 W (Avg.), I
DQ
= 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
45
39
20
P6dB = 38.73 dBm (7.465 W)
6
RF Device Data
Freescale Semiconductor
MW6S004NT1
TYPICAL CHARACTERISTICS
ACPR
(dB)
0
-70
P
out
, OUTPUT POWER (WATTS) AVG.
50
-20
40
-30
30
-40
20
-50
10
-60
0.01
1
10
G
ps
ACPR
Figure 8. Single-Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
10
14
20
0.01
0
60
T
C
= -30
_C
25
_C
-30
_C
1
19
18
17
16
40
30
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
16 V
I
DQ
= 50 mA
f = 1960 MHz
V
DD
= 12 V
7
15
19
0
6
17
16
18
2
3
4
G
ps
, POWER GAIN (dB)
12
22
1800
-25
0
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
20
-5
18
16
-10
-15
14
-20
2100
2050
2000
1950
1900
1850
V
DD
= 28 Vdc
P
out
= 2 W CW
I
DQ
= 50 mA
S1
1
(
dB
)
S21 (dB)
85
_C
85
_C
8
5
1
20 V
V
DD
= 28 Vdc
I
DQ
= 50 mA
f = 1960 MHz
24 V
28 V
32 V
D
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
D
,
DRAIN
EFFICIENCY (%)
0.1
V
DD
= 28 Vdc, I
DQ
= 50 mA
f = 1960 MHz, N-CDMA IS-95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
15
0.1
50
D
18.5
17.5
16.5
15.5
MW6S004NT1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
7
90
T
J
, JUNCTION TEMPERATURE (
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
5
10
4
120
140
160
180 190
MTTF
F
ACT
OR (HOURS x AMPS
2
)
100
200
170
150
130
110
10
6
8
RF Device Data
Freescale Semiconductor
MW6S004NT1
f = 1930 MHz
Z
o
= 10
Z
load
Z
source
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP
f
MHz
Z
source
W
Z
load
W
1930
1.96 - j5.34
8.78 + j6.96
1960
1.89 - j5.10
8.93 + j7.46
1990
1.82 - j4.85
9.11 + j7.97
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 13. Series Equivalent Source and Load Impedance
MW6S004NT1
9
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (V
DD
= 28 V, 50 ohm system)
I
DQ
= 50 mA
f
MH
S
11
S
21
S
12
S
22
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
500
0.649
-116.340
7.902
105.420
0.056
-73.750
0.548
-33.570
550
0.695
-121.680
7.502
98.790
0.053
-80.570
0.593
-41.480
600
0.733
-126.560
7.111
92.380
0.049
-87.010
0.632
-48.890
650
0.770
-131.340
6.699
86.290
0.045
-93.280
0.669
-56.000
700
0.800
-135.740
6.302
80.450
0.041
-99.120
0.701
-62.810
750
0.827
-140.030
5.922
74.850
0.038
-104.850
0.727
-69.290
800
0.848
-143.950
5.552
69.630
0.035
-110.110
0.750
-75.350
850
0.866
-147.690
5.220
64.580
0.032
-115.220
0.770
-81.130
900
0.882
-151.140
4.891
59.970
0.029
-119.960
0.786
-86.570
950
0.895
-154.560
4.597
55.490
0.026
-124.790
0.800
-91.730
1000
0.907
-157.590
4.315
51.240
0.024
-129.090
0.813
-96.660
1050
0.916
-160.540
4.060
47.170
0.022
-133.370
0.824
-101.340
1100
0.923
-163.310
3.819
43.340
0.020
-137.460
0.833
-105.790
1150
0.929
-165.930
3.601
39.650
0.018
-141.440
0.840
-110.050
1200
0.935
-168.430
3.398
36.110
0.017
-145.330
0.847
-114.170
1250
0.938
-170.770
3.210
32.740
0.015
-149.540
0.851
-118.060
1300
0.942
-173.030
3.036
29.490
0.014
-153.430
0.856
-121.880
1350
0.945
-175.140
2.875
26.360
0.013
-157.460
0.859
-125.520
1400
0.948
-177.170
2.728
23.330
0.012
-161.910
0.863
-129.020
1450
0.951
-179.090
2.590
20.440
0.011
-166.180
0.866
-132.390
1500
0.953
179.030
2.464
17.640
0.010
-170.630
0.869
-135.650
1550
0.954
177.270
2.347
14.920
0.009
-174.890
0.872
-138.760
1600
0.955
175.570
2.240
12.320
0.008
179.950
0.875
-141.750
1650
0.956
173.980
2.139
9.740
0.008
173.920
0.877
-144.650
1700
0.957
172.350
2.047
7.250
0.007
167.710
0.880
-147.480
1750
0.957
170.800
1.958
4.810
0.007
161.810
0.882
-150.180
1800
0.958
169.340
1.879
2.440
0.006
155.370
0.884
-152.760
1850
0.959
167.920
1.806
0.260
0.006
148.940
0.886
-155.230
1900
0.959
166.510
1.736
-1.980
0.005
142.630
0.887
-157.580
1950
0.960
165.200
1.668
-4.310
0.005
136.740
0.888
-160.050
2000
0.959
163.800
1.611
-6.240
0.005
129.910
0.890
-162.070
2050
0.959
162.420
1.555
-8.290
0.005
123.810
0.891
-164.190
2100
0.958
161.170
1.504
-10.270
0.005
118.200
0.892
-166.140
2150
0.958
159.840
1.456
-12.210
0.005
112.740
0.893
-168.060
2200
0.957
158.560
1.412
-14.130
0.005
108.460
0.894
-169.840
2250
0.957
157.160
1.372
-16.010
0.005
103.840
0.896
-171.610
2300
0.955
155.870
1.334
-17.870
0.005
99.310
0.896
-173.260
2350
0.954
154.510
1.300
-19.700
0.005
95.360
0.897
-174.830
2400
0.953
153.120
1.268
-21.510
0.005
91.030
0.898
-176.390
2450
0.953
151.730
1.238
-23.250
0.005
87.460
0.899
-177.840
10
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 7. Common Source Scattering Parameters (V
DD
= 28 V, 50 ohm system) (continued)
I
DQ
= 50 mA
f
MH
S
11
S
21
S
12
S
22
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
2500
0.952
150.340
1.211
-25.120
0.006
84.160
0.899
-179.270
2550
0.950
149.010
1.187
-26.920
0.006
80.780
0.897
179.420
2600
0.949
147.380
1.166
-28.650
0.006
77.880
0.897
178.120
2650
0.948
145.920
1.144
-30.420
0.007
74.670
0.898
176.840
2700
0.944
144.200
1.121
-32.310
0.007
71.360
0.896
175.480
2750
0.944
142.790
1.105
-34.230
0.007
67.980
0.897
174.060
2800
0.943
141.020
1.088
-36.000
0.007
63.950
0.897
172.930
2850
0.941
139.410
1.073
-37.870
0.007
61.230
0.896
171.630
2900
0.940
137.640
1.058
-39.760
0.008
59.810
0.896
170.330
2950
0.938
135.900
1.045
-41.680
0.008
58.280
0.896
169.040
3000
0.937
133.860
1.032
-43.610
0.008
56.740
0.895
167.510
MW6S004NT1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 466-03
ISSUE D
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.255
0.265
6.48
6.73
B
0.225
0.235
5.72
5.97
C
0.065
0.072
1.65
1.83
D
0.130
0.150
3.30
3.81
E
0.021
0.026
0.53
0.66
F
0.026
0.044
0.66
1.12
G
0.050
0.070
1.27
1.78
H
0.045
0.063
1.14
1.60
K
0.273
0.285
6.93
7.24
L
0.245
0.255
6.22
6.48
N
0.230
0.240
5.84
6.10
P
0.000
0.008
0.00
0.20
Q
0.055
0.063
1.40
1.60
R
0.200
0.210
5.08
5.33
S
0.006
0.012
0.15
0.31
U
0.006
0.012
0.15
0.31
ZONE V
0.000
0.021
0.00
0.53
ZONE W
0.000
0.010
0.00
0.25
ZONE X
0.000
0.010
0.00
0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J
0.160
0.180
4.06
4.57
A
B
D
F
L
R
3
4
2
1
K
N
ZONE V
ZONE W
ZONE X
G
S
H
U
_
10 DRAFT
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RF Device Data
Freescale Semiconductor
MW6S004NT1
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