IGBT MODULE
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Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
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Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
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Outline Drawing
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Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
V
Gate -Emitter Voltage
V
GES
20
V
Continuous (25C / 80C)
I
C
800 / 600
Collector
1ms (25C / 80C)
I
C PULSE
1600 / 1200
Current
Continuous
-I
C
600
1ms
-I
C PULSE
1200
Max. Power Dissipation
P
C
4100
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
4.5
Screw Torque
Terminals *2
11.0
Nm
Terminals *3
1.7
Note: *1:Recommendable Value; 4.0 0.5 Nm (M6)
*2:Recommendable Value; 10.0 1.0 Nm (M8)
*3:Recommendable Value; 1.5 0.2 Nm (M4)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
2.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=600mA
7.0
8.0
9.0
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=600A
2.85
3.2
V
Input capacitance
C
ies
V
GE
=0V
60
Output capacitance
C
oes
V
CE
=10V
9
nF
Reverse Transfer capacitance
C
res
f=1MHz
4
t
ON
V
CC
=600V
0.75
1.20
t
r
I
C
=600A
0.02
0.60
t
OFF
V
GE
=
15V
0.65
1.00
t
f
R
G
=2.0
0.01
0.30
Diode Forward On-Voltage
V
F
I
F
=600A V
GE
=0V
3.4
V
Reverse Recovery Time
t
rr
I
F
=600A, V
GE
=-15V
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.03
Thermal Resistance
R
th(j-c)
Diode
0.06
C/W
R
th(c-f)
With Thermal Compound
0.0063
n
n
Equivalent Circuit
Turn-on Time
Turn-off Time
s
A
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com
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