IGBT MODULE ( N series )
n
n
Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n
n
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
n
Outline Drawing
n
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
V
Gate -Emitter Voltage
V
GES
20
V
Continuous
I
C
100
Collector
1ms
I
C PULSE
200
Current
Continuous
-I
C
100
1ms
-I
C PULSE
200
Max. Power Dissipation
P
C
780
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
3.5
Terminals *2
4.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
4.5 Nm (M6)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
2.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
30
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=100mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=100A
3.3
V
Input capacitance
C
ies
V
GE
=0V
16000
Output capacitance
C
oes
V
CE
=10V
5800
pF
Reverse Transfer capacitance
C
res
f=1MHz
5160
t
ON
V
CC
=600V
0.65
1.2
t
r
I
C
=100A
0.25
0.6
t
OFF
V
GE
=
15V
0.85
1.5
t
f
R
G
=9.1
0.35
0.5
Diode Forward On-Voltage
V
F
I
F
=100A V
GE
=0V
3.0
V
Reverse Recovery Time
t
rr
I
F
=100A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.16
Thermal Resistance
R
th(j-c)
Diode
0.33
C/W
R
th(c-f)
With Thermal Compound
0.025
n
n
Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
0
50
100
150
200
10
100
1000
t
f
t
r
t
OFF
t
ON
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
, V
GE
15V, T
j
=25C
Switching time : t
ON
, t
r
, t
OFF
, t
f
[nsec]
Collector current : I
C
[A]
0
1
2
3
4
5
0
50
100
150
200
250
Collector-Emitter voltage : V
CE
[V]
Collector current : I
C
[A]
8V
Collector current vs. Collector-Emitter voltage
T
j
=125C
0
1
2
3
4
5
0
50
100
150
200
250
V
GE
=20V,15V,12V,10V
Collector current vs. Collector-Emitter voltage
T
j
=25C
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
8V
V
GE
=20V,15V,12V,10V
0
5
10
15
20
25
0
2
4
6
8
10
50A
100A
200A
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25C
I
C
=
Collector-Emitter voltage :V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125C
50A
100A
200A
I
C
=
Collector-Emitter voltage V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
50
100
150
200
10
100
1000
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
, V
GE
=15V, T
j
=125C
t
f
t
r
t
ON
t
OFF
Switching time : t
ON
, t
r
, t
OFF
, t
f
[nsec]
Collector current : I
C
[A]
0,001
0,01
0,1
1
0,001
0,01
0,1
1
IGBT
Diode
Transient Thermal Resistance
Thermal resistance : R
th(j-c)
[C/W]
Pulse Width : PW [s]
0
400
800
1200
0
200
400
600
800
1000
800V
600V
V
CC
=400V
0
5
10
15
20
25
Dynamic Input Characteristics
T
j
=25C
Collector-Emitter Voltage : V
CE
[V]
Gate Charge : Q
G
[nC]
10
100
1000
t
f
t
r
t
OFF
t
ON
Switching Time vs. R
G
V
CC
=600V, I
C
=100A, V
GE
=15V, T
j
=25C
Switching Time : t
ON
, t
r
, t
OFF
, t
f
[ns]
Gate Resistance : R
G
[
]
0
1
2
3
4
5
0
50
100
150
200
250
T
j
=125C 25C
Forward Current vs. Forward Voltage
V
GE
=0V
Forward Current : I
F
[A]
Forward Voltage : V
F
[V]
0
50
100
150
200
10
100
I
rr
25C
t
rr
25C
t
rr
125C
I
rr
125C
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
Reverse Recovery Current : I
rr
[A]
Reverse Recovery Time : t
rr
[ns]
Forward Current : I
F
[A]
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
Reversed Biased Safe Operating Area
+V
GE
=15V, -V
GE
<15V, T
j
<125C, R
G
>9.1
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
GE
[V]
0 5 1 0 1 5 2 0 2 5 3 0 3 5
1
1 0
C
r es
C
o e s
C
ies
Capacitance vs. Collector-Emitter voltage
T
j
=25C
Capacitance : C
ies
, C
oes
, C
res
[nF]
Collector-Emitter Voltage : V
CE
[V]
0 5 0 1 0 0 1 5 0 2 0 0
0
1 0
2 0
3 0
4 0
E
rr
25C
E
rr
125C
Switching loss vs. Collector current
V
CC
=600V, R
G
=9.1
, V
GE
=15V
Switching loss : E
ON
,E
OFF
,E
rr
[mJ/cycle]
Collector Current : I
C
[A]
E
O N
25C
E
O N
125C
E
O F F
25C
E
O F F
125C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Strae 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)
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