2MBI100SC-120
IGBT Module
1200V / 100A 2 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Thermal resistance characteristics
Thermal resistance
0.16
0.33
0.05
IGBT
Diode
the base to cooling fin
C/W
C/W
C/W
*
2
:
This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
G1 E1 G2 E2
C1
E2
C2E1
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Symbol
Collector-Emitter voltage
V
CES
Gate-Emitter voltaga
V
GES
Collector
Continuous Tc=25C IC
current
Tc=80C
1ms Tc=25C IC pulse
Tc=80C
-I
C
1ms
-I
C
pulse
Max. power dissipation
P
C
Operating temperature
T
j
Storage temperature
T
stg
Isolation voltage *
1
V
is
Screw torque
Mounting *
2
Terminals *
2
Rating
1200
20
150
100
300
200
100
200
780
+150
-40 to +125
AC 2500 (1min. )
3.5
3.5
Unit
V
V
A
A
A
A
A
A
W
C
C
V
Nm
Nm
*
1 :
Aii terminals should be connected together when isolation test will be done
*
2 :
Recommendable value : 2.5 to 3.5 Nm(M5)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
2.0
0.4
5.5
7.2
8.5
2.3
2.6
2.8
12000
2500
2200
0.35
1.2
0.25
0.6
0.1
0.45
1.0
0.08
0.3
2.3
3.0
2.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=100mA
Tc=25 C V
GE
=15V, I
C
=100A
Tc=125C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=100A
V
GE
=15V
R
G
=9.1 ohm
Tj=25C I
F
=100A, V
GE
=0V
Tj=125C
I
F
=100A
mA
A
V
V
pF
s
V
s
Electrical characteristics (at Tj=25C unless otherwise specified)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
2MBI100SC-120
IGBT Module
Characteristics (Representative)
0
1
2
3
4
5
0
50
100
150
200
250
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
50
100
150
200
250
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
50
100
150
200
250
Tj= 25C
Tj= 125C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic=50A
Ic= 100A
Ic= 200A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
5000
10000
50000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
200
400
600
800
1000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
2MBI100SC-120
IGBT Module
0
50
100
150
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 9.1 ohm, Tj= 25C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
50
100
150
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 9.1ohm, Tj= 125C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1
10
100
300
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=15V, Tj= 25C
Gate resistance : Rg [ohm]
Switching time : ton, tr, toff, tf [ nsec ]
0
50
100
150
200
0
5
10
15
20
25
30
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=9.1ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
1
10
100
300
0
10
20
30
40
50
60
70
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ohm]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
50
100
150
200
250
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>9.1ohm, Tj=<125C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
2MBI100SC-120
IGBT Module
Outline Drawings, mm
mass : 240g
0
1
2
3
4
0
50
100
150
200
250
Tj=25C
Tj=125C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
50
100
150
10
100
500
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=9.1ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001
0.01
0.1
1
1E-3
0.01
0.05
0.1
1
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
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